Microsemi Corporation

Tracy A Autry

Fernando C Lynch

Dan Tulbure

Stephen G Kelly

Steven G Kelly

George A Digiacomo

Don Mathes

Christopher Alan Barnes

A hermetically sealed integrated circuit package that includes a cavity housing a semiconductor die, whereby the cavity is pressurized during assembly and when formed. The invention prevents the stress on a package created when the package is subject to high temperatures at atmospheric pressure and then cooled from reducing the performance of the die at high voltages. By packaging a die at a high pressure, such as up to 50 PSIG, in an atmosphere with an inert gas, and providing a large pressure in the completed package, the dies are significantly less likely to arc at higher voltages, allowing the realization of single die packages operable up to at least 1200 volts. Moreover, the present invention is configured to employ brazed elements compatible with Silicon Carbide dies which can be processed at higher temperatures.

Silicon carbide semiconductor

A high power surface mount package including a thick bond line of solder interposed between the die and a heatsink, and between the die and a lead frame, wherein the lead frame has the same coefficient of thermal expansion as the heatsink. In one preferred embodiment, the heatsink and the lead frame are comprised of the same material. The package can be assembled using standard automated equipment, and does not require a weight or clip to force the parts close together, which force typically reduces the solder bond line thickness. Advantageously, the thermal stresses on each side of the die are effectively balanced, allowing for a large surface area die to be packaged with conventional and less expensive materials. One type of die that benefits from the present invention can include a transient voltage suppressor, but could include other dies generating a significant amount of heat, such as those in excess of 0.200 inches square.

Less expensive high power plastic surface mount package

High voltage high package pressure semiconductor package

A microelectronic device including a microelectronic circuit and at least one planar flexible lead. These planar flexible leads are adapted to bend and flex during mechanical stress allow direct mounting of the device to a member, and withstand extreme thermal cycling, such as &#x2212;197&#xb0; C. to +150&#xb0; C. such as encountered in space.

Integrated circuit with flexible planer leads

A microelectronic device including a microelectronic circuit and at least one planar flexible lead. These planar flexible leads are adapted to bend and flex during mechanical stress, allowing direct mounting of the device to a member and able withstand extreme thermal cycling between &#x2212;20&#xb0; C. to +80&#xb0; C. encountered in terrestrial applications. Advantageously, the microelectronic device is adapted to be both weldable and solderable. The invention may comprise a solar cell diode, which is flexible and so thin that it can be affixed directly to the solar panel proximate the solar cell.

Integrated circuit with flexible planar leads

A single step packaging process that both melts a solder and also cures an adhesive about a microelectronic circuit. The process finds technical advantages by simplifying packaging of a die that may be coupled to a planar flexible lead, which leads to a lower production cost and quicker manufacturing time. The planar flexible lead may be adapted to bend and flex during mechanical stress and during extreme temperature cycling, and allow direct mounting of the device to a member by easily welding or soldering. The invention may comprise a flexible solar cell diode that can be closely positioned on solar panels at an extremely low cost.

Flexible diode package and method of manufacturing

A low profile, 1 or 2 die design, surface mount high power microelectronic package with coefficient of expansion (CTE) matched materials such as Silicon die to Molybdenum conductor (bond pads). The CTE matching of the materials in the package enables the device to withstand repeated, extreme temperature range cycling without failing or cracking. The package can be used for transient voltage suppression (TVS), Schottky diode, rectifier diode, or high voltage diodes, among other uses. The use of a heat sink metal conductor that has a very high modulus of elasticity allows for a very thin wall plastic locking to be utilized in order to minimize the footprint of the package.

Plastic surface mount large area power device

An electronic package designed to package silicon carbide discrete components for silicon carbide chips. The electronic package allows thousands of power cycles and/or temperature cycles between &#x2212;55&#xb0; C. to 300&#xb0; C. The present invention can also tolerate continuous operation at 300&#xb0; C., due to high thermal conductivity which pulls heat away from the chip. The electronic package can be designed to house a plurality of interconnecting chips within the package. The internal dielectric is able to withstand high voltages, such as 1200 volts, and possibly up to 20,000 volts. Additionally, the package is designed to have a low switching inductance by eliminating wire bonds. By eliminating the wire bonds, the electronic package is able to withstand an injection mold.

High temperature, high voltage SiC void-less electronic package

A battery cell bypass protection technology for use with NiH2 (or other energy storage) cells on a spacecraft or other high reliability application. The device is a thermally activated switch, designed to bypass the current around a failed (open) or failing cell so that the other cells in the battery are unaffected. One unique aspect of the design is a &ldquo;pre-loaded&rdquo; compression action, solder shorting mechanism. Another unique aspect is that the construction employs series redundant heaters and blocking diodes in multi-chip packages. These unique aspects provide consistent and complete shorting to provide a low-resistance cell bypass in any orientation on earth (1g) or in orbit (0g). Another unique aspect is the use of non-lead-based solder that minimizes &ldquo;creep&rdquo; over time and temperature.

Battery cell bypass with pre-loaded compression action

A hermetic packaging technology for silicon Schottky die or any other two terminal solderable die. The technology uses a pressed ceramic frame, solid metal pads, a solid metal disc, metal seal rings, and a direct high temperature solder bond to the die. There are no intermediate straps or wires used to connect the die to the metal pads. The die is actually part of the final package, or it can be said that the package is built around the die. The device is hermetically sealed for use in high reliability applications such as military or space programs. All materials used in the technology are matched for coefficient of thermal expansion (CTE).

Packaging technology for Schottky die

A surface mount package for use with large area silicon device. The package uses a pressed ceramic frame and solid metal pads which are closely matched for coefficient of thermal expansion (CTE) to each other and to the silicon die. The package is specifically designed for large area die (greater than 0.0625 inches squared) and for high temperature eutectic alloy bonding. All materials of the package are CTE matched to each other and to silicon within 10%.

Growing community of inventors

Dove Canyon, CA, United States of America

Tracy A Autry