Sanyo Electric Co., Ltd.

Toyozo Nishida

Masayuki Shono

Yasuyuki Bessho

Ryoji Hiroyama

Shigeharu Taira

Kazushi Mori

Atsushi Tajiri

Minoru Sawada

Shoji Honda

Yasuaki Inoue

Yasuhiro Ueda

Takahiro Uetani

Hiroyuki Kase

Natsuyo Sasada

Kouji Komeda

Junko Suzuki

In the solar cell module, one finger electrodeis branched into multiple branched portionsin an intersecting region &#x3b1; where the one finger electrodeintersects a conductive body including a wiring memberconfigured to collect photo-generated carriers from the finger electrode

Solar cell and solar cell module

Imperfect filling sometimes occurs when a conductive material is filled into a through-hole formed on a solar cell. A method of manufacturing a solar cell of the invention employs a support wherein a conductive material is filled into a through-hole. Accordingly, it is possible to suppress occurrence of imperfect filling and thereby provide a method of manufacturing a solar cell with enhanced reliability. Moreover, a flat surface is provided on a solar cell of the present invention when a connector electrode is formed on a through-hole and this enables enhanced connection reliability.

Solar cell and method of manufacturing the same

A six-segment holographic surface is divided into regions by dividing lines. A four-segment photodetection part is divided into four photodetection parts equal in area by a section line substantially parallel to the radial direction of an optical disk and a section line orthogonal thereto. A main light beam diffracted in the regions of the six-segment holographic surface are condensed as spots at positions apart from each other on opposite sides on a section line of the four photodetection parts, and the main beam diffracted in the regions is condensed as spots in the center of the photodetection parts of the four-segment photodetection part.

Optical pickup with a diffraction element consist of six regions providing spatial variation corresponding to a focas state

A semiconductor laser device comprises an n-type cladding layer, an active layer formed on the n-type cladding layer and having a quantum well structure including one or a plurality of quantum well layers, a p-type cladding layer comprising a flat portion formed on the active layer and a stripe-shaped ridge portion on the flat portion, and a current blocking layer formed on the flat portion so as to cover the side surface of the ridge portion and formed on a region on the upper surface of the ridge portion from one of facets of a cavity to a position at a predetermined distance therefrom.

Semiconductor laser device

On an n-type GaAs semiconductor substrate, an n-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate, an active layer and a p-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate are formed, and a p-type barrier cladding layer formed of AlGaInP system crystal or AlInP system crystal is provided in the p-type cladding layer. The p-type barrier cladding layer has a thickness through which electrons are almost not transmitted, has tensile strain, and also has band gap energy larger than that of the p-type cladding layer.

Growing community of inventors

Moriguchi, Japan

Toyozo Nishida