Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Toyotaka Kataoka

Tetsuji Yamaguchi

Fumihiko Koga

Hideaki Togashi

Shintarou Hirata

Taiichiro Watanabe

Yukio Kaneda

Yoshihiro Ando

Satoshi Keino

Junli Wang

Toshihiko Suzuki

Akihide Kashiwagi

Tomoyuki Hirano

Masaki Saito

Kyosuke Ito

Yoshiya Hagimoto

Keisuke Hatano

Atsushi Suzuki

Hideki Kimura

Shinji Tanaka

Kazuhiko Tokunaga

An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.

Imaging device having charge storage electrode, first electrode, second electrode and transfer control electrode, driving method for imaging device having the same, and electronic apparatus

A solid-state imaging element according to an embodiment of the present disclosure includes: a photoelectric conversion layer; an insulation layer provided on one surface of the photoelectric conversion layer and having a first opening; and a pair of electrodes opposed to each other with the photoelectric conversion layer and the insulation layer interposed therebetween. Of the pair of electrodes, one electrode provided on a side on which the insulation layer is located includes a first electrode and a second electrode each of which is independent, and the first electrode is embedded in the first opening provided in the insulation layer to be electrically coupled to the photoelectric conversion layer.

Solid-state imaging element having a photoelectric conversion layer and a pair of electrodes

Imaging device having a plurality of electrodes with a photoelectric conversion layer forming a photoelectric conversion unit

Solid-state imaging element and solid-state imaging apparatus having a photoelectric conversion layer and a pair of electrodes

Imaging device having first, second and third electrodes with an insulating material and a photoelectric conversion layer and driving method for imaging device having the same, and electronic apparatus

Imaging element, stacked-type imaging element, solid-state imaging device, and driving method for solid-state imaging device

The present technology relates to a semiconductor device, a manufacturing method of a semiconductor device, a semiconductor wafer, and electronic equipment, which allow a semiconductor device, in which miniaturization is possible, to be provided. A semiconductor device includes a semiconductor substrate, a wiring layer that is formed on the semiconductor substrate, and a drive circuit that is provided in a circuit forming region of the semiconductor substrate. Then, the semiconductor device is configured to include a pad electrode that is electrically connected to the drive circuit and exposed from the side surface of the wiring layer, and an external connection terminal that is provided in side surfaces of the semiconductor substrate and the wiring layer, and is electrically connected to the pad electrode.

Semiconductor device, manufacturing method of semiconductor device, semiconductor wafer, and electronic equipment

A semiconductor device, including: a first group of transistors formed on a semiconductor substrate; and a second group of transistors formed on the semiconductor substrate, each of which is lower in operating voltage than each of the transistors in the first group; wherein each of the transistors in the first group includes a first gate electrode formed on the semiconductor substrate through a first gate insulating film, and a silicide layer formed on the first gate electrode; each of the transistors in the second group includes a second gate electrode formed in a trench for gate formation, formed in an insulating film above the semiconductor substrate, through a second gate insulating film; and a protective film is formed so as to cover the silicide layer on each of the first gate electrodes of the first group of transistors.

Semiconductor device and a method of manufacturing the same

Disclosed herein is a semiconductor device, including: a first group of transistors formed on a semiconductor substrate; and a second group of transistors formed on the semiconductor substrate, each of which is lower in operating voltage than each of the transistors in the first group; wherein each of the transistors in the first group includes a first gate electrode formed on the semiconductor substrate through a first gate insulating film, and a silicide layer formed on the first gate electrode; each of the transistors in the second group includes a second gate electrode formed in a trench for gate formation, formed in an insulating film above the semiconductor substrate, through a second gate insulating film; and a protective film is formed so as to cover the silicide layer on each of the first gate electrodes of the first group of transistors.

A method of manufacturing a semiconductor device that includes a first and second device regions on a substrate. The method includes the steps of forming an insulation layer on the substrate, laminating a first semiconductor layer having a plane orientation different from the surface of the substrate on the insulation layer and exposing the substrate by removing the insulation layer and the first semiconductor layer from the second device region. A second semiconductor layer having the same plane orientation as the substrate and that is made of a strained layer is formed by epitaxial growth on the exposed substrate in the second device region.

Method of fabricating PMOS and NMOS transistor on the same substrate

A semiconductor device including an NMOS region and a PMOS region in the same substrate, wherein the semiconductor device includes a strained Si layer which is provided on the substrate in the NMOS region and in which the surface has a plane orientation different from that of the substrate, and a strained SiGe layer which is provided on the substrate in the PMOS region and which is composed of a stained layer having the same plane orientation as that of the surface of the substrate; and a method of manufacturing the same.

Semiconductor device with PMOS and NMOS transistors

A method of forming a silicon oxide layer comprising initiating formation of a silicon oxide layer on a surface of a silicon layer by an oxidation method using wet gas at an ambient temperature at which no silicon atom is eliminated from the surface of the silicon layer, and then, forming the silicon oxide layer up to a predetermined thickness by an oxidation method using wet gas.

Method of forming silicon oxide layer

An apparatus for forming a silicon oxide film which has a process chamber and is for thermally oxidizing a surface of a silicon layer by introducing water vapor into the process chamber, and which further has dew-formation prevention/evaporation means for preventing dew formation in the process chamber and/or evaporating dew in the process chamber.

Apparatus for forming silicon oxide film and method of forming silicon oxide film

Growing community of inventors

Kanagawa, Japan

Toyotaka Kataoka