Riken Corporation

Tokyo Ohka Kogyo Co., Ltd.

Asahi Kasei Kogyo Kabushiki Kaisha

Nanomembrane Technologies, Inc.

Toyoki Kunitake

Shigenori Fujikawa

Hideo Hada

Toshiyuki Ogata

Izumi Ichinose

Yoshitaka Aoki

Shogo Matsumaru

Emi Muto

Junhui He

Takahiro Senzaki

Kiyoshi Ishikawa

Sanae Furuya

Takuya Noguchi

Mari Koizumi

Yoshio Okahata

Miho Ariyoshi

Jian-guo Huang

Rie Takaki

Richard Vendamme

Jianguo Huang

Hiromi Takaemoto

Shingenori Fujikawa

Yuanzhi Li

The present invention provides: a gas separation method which is capable of desirably separating a slight amount of a component from a mixed gas under mild conditions such that the pressure difference between both sides of a gas separation membrane is 1 atmosphere or less; and a gas separation membrane which is suitable for use in this gas separation method. According to the present invention, in a gas separation method wherein a specific gas (A) in a mixed gas, which contains the specific gas (A) at a concentration of 1,000 ppm by mass or less, is selectively permeated with use of a gas separation membrane, an extremely thin gas separation membrane that has a film thickness of 1 &#x3bc;m or less is used, so that the gas (A) is desirably separated under mild conditions such that the pressure difference between both sides of the gas separation membrane is 1 atmosphere or less.

Gas separation method and gas separation membrane

A novel ion conductive material is provided. The ion conductive material composed of an amorphous material is employed.

Ion conductive material, conductive film for fuel cell, film electrode bonded body and fuel cell

A proton conducting membrane comprising, as a main component, a ceramic structure in which an oxygen atom of a metal oxide is bonded through the oxygen atom with at least one group derived an oxygen acid selected from &#x2014;B(O)&#x2014;, &#x2014;S(&#x2550;O)(O)&#x2014;, &#x2014;P(&#x2550;O)(O)&#x2014;, &#x2014;C(&#x2550;O)(O)&#x2014;, and &#x2014;N(O)&#x2014;, wherein the metal oxide and said at least one group derived from the oxygen acid share the oxygen atom, the proton conducting membrane being made by a sol-gel reaction of the oxygen acid or its precursor and a precursor of the metal oxide in order to obtain a sol-gel reaction product, followed by heating of the sol-gel reaction product at a temperature in a range of 100&#xb0; C. to 600&#xb0; C., the oxygen acid or its precursor being selected from a boric acid, a sulfuric acid, a phosphoric acid, a carbonic acid, a nitric acid, and precursors thereof. Thus, a novel proton conducting membrane is provided.

Proton conducting membrane and method for producing proton conducting membrane

A film-forming material that is capable of forming, at a low temperature, a film having a high degree of etching resistance and a high etching selectivity ratio relative to an organic film, as well as a method of forming a pattern that uses the film-forming material. The film-forming material includes a metal compound (W) capable of generating a hydroxyl group upon hydrolysis, and a solvent (S) in which the metal compound is dissolved, wherein the solvent (S) includes a solvent (S1) with a boiling point of at least 155&#xb0; C. that contains no functional groups that react with the metal compound (W). The method of forming a pattern includes the steps of: coating a pattern, which has been formed on top of an organic film of a laminate that includes a substrate and the organic film, using the above film-forming material, and then conducting etching of the organic film using the pattern as a mask.

Film-forming material and method of forming pattern

A method of manufacturing a structure, including forming a composite film composed of a coating film and an organic or inorganic film on top of a substrate by forming the coating film on the surface of a template provided on top of the substrate; forming the organic or inorganic film on the surface of the coating film, and removing a portion of the organic or inorganic film and a portion of the coating film; forming a second coating film on the surface of the composite film; forming an organic coating film on the substrate that covers the second coating film; removing a portion of the second coating film; and forming a structure composed of a metal or metal oxide later on the substrate by removing all residues left on the substrate except for the coating film and the second coating film.

Method for manufacturing a structure

A method of forming a nano-structure can form a fine pattern easily, and the nano-structure obtained by the method is provided. A method of forming a nano-structure comprising forming a thin film by a liquid phase adsorption on surface of a template formed on a substrate, and removing a portion of the thin film, and removing the template is used.

Method of forming a nano-structure and the nano-structure

There are provided a coating material which improves an etching resistance of a pattern in an etching process using a pattern formed on a substrate as a mask. The material is a pattern coating material for an etching process using a pattern formed on a substrate as a mask, including a metal compound (W) which can produce a hydroxyl group on hydrolysis.

Pattern coating material and pattern forming method

Amorphous metal oxide thin film is produced by removing through oxygen plasma treatment the organic component from an organics/metal oxide composite thin film having thoroughly dispersed therein such organic component at molecular scale. This ensures production of amorphous metal oxide thin film with low density and excellent thickness precision.

Thin film materials of amorphous metal oxides

Provided is a thin film having self-supporting properties and having excellent strength, durability and flexibility and a method for manufacturing the thin film. A thin film having an interpenetrating net-work layer and having a film thickness of 500 nm or less, the interpenetrating net-work layer being constituted of at least a metal oxide and an organic polymer.

Thin film having interpenetrating network layer and method for manufacturing the thin film

There is disclosed a method for producing a supported metal nanoparticle, which has the steps of adsorbing a metal ion-containing compound to a support of an organic material and reducing the adsorbed metal ion to form a metal nanoparticle on the support. In the producing method, by using a various organic material as a matrix, the metal nanoparticle can be easily formed in situ with excellent accuracy from the metal ion-containing compound.

Metal nanoparticle with support, continuous metal nanoparticle body, and methods for producing these

Exchangeable metal ions are removed from an amorphous composite metal oxide and different metal ions are introduced to manufacture a nanomaterial of composite metal oxide. Based on this method, it is possible to reliably form composite metal oxide nanomaterials over a wide range of compositions.

Nanomaterials of composite metal oxides

There are provided a method capable of mass-producing a nanotube material easily with low costs, and a nanotube material. The method of the present invention for producing a nanotube material has at least forming a metal oxide thin film or an organic/metal oxide composite thin film on an inner wall of a porous substrate and removing the porous substrate. The nanotube material of the invention has a structure provided from a body comprising a metal oxide thin film or an organic/metal oxide composite thin film formed on an inner wall of the porous substrate, from which a portion corresponding to the porous substrate is removed.

Method for producing nanotube material and nanotube material

A production method for a nanomaterial comprising the steps of: forming a template on a solid substrate using a metal oxide nanomaterial forming composition including an organic compound with a phenolic hydroxyl group and a molecular weight of at least 500, forming a metal oxide layer on the template, and removing the template to generate a metal oxide nanostructure.

Production method for a nanomaterial

Provided is a method for producing, in a simple manner, a general-purpose dielectric insulating thin film that has a varying dielectric constant and accepts an accurate film thickness control and a control of the composition, the structure and the thickness thereof. The process includes a step (A) of making a substrate having a hydroxyl group in its surface or having a hydroxyl group introduced into its surface, adsorb a metal compound having a functional group capable of reacting with a hydroxyl group for condensation and capable of forming a hydroxyl group through hydrolysis, a step (B) of removing the excessive metal compound from the substrate surface, a step (C) of hydrolyzing the metal compound to form a metal oxide layer, and a step (D) of treating the metal oxide layer according to any one treating method selected from the group consisting of oxygen plasma treatment, ozone oxidation treatment, firing treatment and rapid thermal annealing treatment to thereby obtain a dielectric insulating thin film.

Process for producing dielectric insulating thin film, and dielectric insulating material

Nano-wrapped molecular materials comprising molecule, molecular aggregate, or nanoparticle which has the surface at least partially covered with an ultrathin film containing oxygen-metal bond was disclosed. The nano-wrapped molecular materials successfully retain or are dramatically improved in the intrinsic physical and chemical properties of the individual molecules or nanoparticles.

Growing community of inventors

Wako, Japan

Toyoki Kunitake