Mitsubishi Denki Kabushiki Kaisha

Canon Kabushiki Kaisha

Toyoki Kitayama

Kenji Itoga

Shunichi Uzawa

Yutaka Watanabe

Hiroshi Watanabe

Kouji Kise

An X-ray exposure apparatus extracts exposure X-rays from light called synchrotron radiation from a synchrotron radiation source by an optical path including an X-ray mirror and performs exposure using the extracted X-rays. The X-ray mirror contains a material having an absorption edge in at least one of a wavelength range of less than 0.45 nm and a wavelength range exceeding 0.7 nm, thereby implementing exposure using the X-ray in the range of 0.45 nm to 0.7 nm. The X-ray mirror contains at least one material selected from the group consisting of iron, cobalt, nickel, copper, manganese, chromium, and their alloys, nitrides, carbides, and borides.

X-ray exposure apparatus and method, semiconductor manufacturing apparatus, and microstructure

An X-ray exposure apparatus comprises an X-ray mirror containing a material having an absorption edge only in at least either one of a wavelength region of less than 0.45 nm and a wavelength region exceeding 0.7 nm as to X-rays.

X-ray exposure apparatus, X-ray exposure method, X-ray mask, X-ray mirror, synchrotron radiation apparatus, synchrotron radiation method and semiconductor device

In an exposing method reflecting synchrotron radiation, having a critical wavelength of 8.46 &angst;, emitted from a radiation generator (SR device) having a deflecting magnetic field of 4.5 T and electron acceleration energy of 0.7 GeV twice through rhodium mirrors having an oblique-incidence angle of 1&deg;, transmitting the light through a beryllium window of 20 &mgr;m and through an X-ray mask prepared by forming an X-ray absorber pattern on a diamond mask substrate of 2 &mgr;m in thickness and thereafter irradiating a resist surface provided on a substrate with the light, the resist has a main absorption waveband in the wave range of at least 3 &angst; and not more than 13 &angst; and contains an element generating Auger electrons having energy in the range of at least about 0.51 KeV and not more than 2.6 KeV upon exposure.

Exposing method and semiconductor device fabricated by the exposing method

An X-ray exposure method and an X-ray exposure apparatus using exposure X-rays having short wavelengths for formation of a fine pattern in X-ray lithography and suppressing fogging due to secondary electrons from a substrate bearing a resin film. The X-ray exposure method includes forming, by coating, a resist film on a substrate made of a material having an absorption-edge in or near an illumination wavelength range; and illuminating the resist film with X-rays having a wavelength range, including the absorption-edge wavelength, through an X-ray mask. The X-ray intensity is reduced in the wavelength range of an absorption spectrum including the absorption-edge of the material of the substrate in an optical path leading to the substrate.

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Hyogo, Japan

Toyoki Kitayama