Shin-Etsu Chemical Co., Ltd.

Research Association for Biotechnology of Agricultural Chemicals

Other

Research Association for Biotechnology of Agricultural

Toyohisa Sakurada

Yukio Inazuki

Hideo Kaneko

Hiroshi Suzuki

Satoshi Watanabe

Takashi Yoshii

Yoshio Kawai

Akira Ikeda

Akira Yamamoto

Takuro Kosaka

Ryuichi Saguchi

Toshinobu Ishihara

Yoshihiro Kubota

Katsuya Takemura

Keiichi Masunaga

Shigehiro Nagura

Tatsushi Kaneko

Takehiko Fukumoto

Kouhei Sasamoto

Masaaki Iguchi

Yoshitaka Yanagi

Kenji Koizumi

Shigeo Irie

Takao Yoshihara

Seiji Nagahara

Etsuo Hatano

Takanobu Terauchi

A photomask blank () having: a transparent substrate (); a first film () etched by chlorine/oxygen-based dry etching and made of a material having resistance against fluorine-based dry etching; and a second film () formed adjacent to the first film and made of a material which comprises silicon and oxygen or silicon, oxygen, and nitrogen and has an Si&#x2014;Si bond and which is substantially not etched by chlorine/oxygen-based dry etching, wherein: the photoresist adhesive performance is improved; the resist pattern is stably maintained without degrading, collapsing, or peeling even when a fine resist pattern is formed from a photoresist film; and an excellent shape and dimensional accuracy is obtained in regard to etching of a lower layer film in which the resist pattern is used.

Photomask blank, method for manufacturing photomask, and mask pattern formation method

A method for manufacturing a photomask blank having at least a silicon-containing inorganic film over a transparent substrate includes forming the silicon-containing inorganic film such that a surface has an oxygen concentration not less than 55 atomic percent and not more than 75 atomic percent, the silicon-containing inorganic film being an SiO film or an SiON film and serving as a hard mask film.

Photomask blank and method for manufacturing photomask blank

A halftone phase shift photomask blank comprising a transparent substrate and a halftone phase shift film consisting of silicon, nitrogen and optional oxygen, and providing a phase shift of 150&#xb0;-200&#xb0; relative to light of wavelength up to 200 nm. The phase shift film includes at least one layer meeting the formula: 2&#xd7;O/Si+3&#xd7;N/Si&#x2267;3.5 wherein Si is a silicon content (at %), N is a nitrogen content (at %), and O is an oxygen content (at %). The phase shift film exhibits satisfactory in-plane uniformity of transmittance.

Halftone phase shift photomask blank and making method

The present invention relates to a photomask blank obtained by forming a resist film after performing a silylation process on a silicon-containing inorganic film and provides a method for manufacturing a photomask blank having at least a silicon-containing inorganic film over a transparent substrate and a resist film on the silicon-containing inorganic film, comprising: forming the silicon-containing inorganic film such that a surface that will contact the resist film has an oxygen concentration not less than 55 atomic percent and not more than 75 atomic percent; performing a silylation process after forming the silicon-containing inorganic film; and then forming the resist film by application. The method can inhibit generation of defects due to resist residues or the like after development.

The present invention relates to a photomask blank obtained by forming a resist film after performing a silylation process on a silicon-containing inorganic film and provides a method for manufacturing a photomask blank having at least a silicon-containing inorganic film over a transparent substrate and a resist film on the inorganic film, comprising: forming the silicon-containing inorganic film; heat treating the formed silicon-containing inorganic film at a temperature more than 200&#xb0; C. under an atmosphere containing oxygen; performing a silylation process after the heat treatment; and then forming the resist film by application. The method can inhibit generation of defects due to resist residues or the like after development.

Method for manufacturing photomask blank

A halftone phase shift photomask blank comprising a transparent substrate and a halftone phase shift film is provided. The phase shift film consists of Si and N, or Si, N and O, and is free of transition metals. The phase shift film has a thickness of 40-70 nm, offers a transmittance of 10-40% and a phase shift of 150-200&#xb0; relative to light of wavelength up to 200 nm, and is resistant to cleaning chemicals.

Halftone phase shift photomask blank, halftone phase shift photomask and pattern exposure method

A resist composition is provided comprising a fluorochemical surfactant which functions to reduce the contact angle of a coating of the resist composition with water or an aqueous base developer as the amount of the fluorochemical surfactant increases. The resist composition forms a coating having a thickness uniformity, free of defects, and wettable with an aqueous base developer when applied onto a substrate, and has a good storage stability in that particles do not increase during storage in solution form.

Resist composition and patterning method

To provide a chemical amplification type positive photoresist composition suited to resist patterning of a substrate presenting surface step differences, a method for manufacturing the semiconductor device employing this composition, and a semiconductor substrate. In a method for manufacturing a semiconductor device, a resist film is formed using a chemical amplification type positive photoresist composition, comprised of a base resin and a basic compound added to the base resin at a rate of 1 to 100 mmol to 100 g of the base resin, on a substrate halving surface step differences and into which the organic removing solution is deposited or oozed, and a predetermined area of the resist film is exposed to light to form a resist pattern.

Chemical amplification type photoresist composition, method for producing a semiconductor device using the composition, and semiconductor substrate

A chemically amplified positive resist composition comprising a base resin and a compound containing two to six functional groups, specifically alkenyloxy, acetal and ortho-ester groups in the molecule is suitable for forming a contact hole pattern by the thermal flow process.

Chemically amplified positive resist composition and patterning method

Described are a biodegradable sustained-release preparation which comprises a mixture of 99 to 10 parts by weight of an aliphatic polyester and 1 to 90 parts by weight of a modifier for the regulation of sustained releasability of an active ingredient, and the active ingredient held by said mixture; a biodegradable pheromone dispenser, wherein an aliphatic polyester is used as a sustained release layer for a pheromone contained therein as a liquid phase, said aliphatic polyester having recurring units whose ratio (I/II) of (I) the number of the carbon atoms constituting the main chain and not relating to ester linkage to (II) the number of the carbon atoms constituting the ester linkage is 2 or larger; and a biodegradable pest controlling agent which is obtained by mixing and dispersing an active ingredient and a carrier for holding said active ingredient in a biodegradable aliphatic polyester or which comprises 2 to 60 wt. % of an active ingredient, 30 to 95 wt. % of a biodegradable aliphatic polyester and 2 to 50 wt. % of a carrier for holding the active ingredient.

Biodegradable sustained-release preparation, biodegradable pheromone dispenser and biodegradable pest controlling agent

An efficient method is proposed for the stabilization of a sex pheromone compound of insect pest, which is a long-chain aliphatic unsaturated ester, alcohol, ketone or hydrocarbon compound having at least ten carbon atoms and at least one double bond in a molecule, used in pest control. The method comprises admixing the compound with 2-(2&prime;-hydroxy-5&prime;-methylphenyl) benzotriazole and an antioxidant which is preferably a hydroquinone compound such as tert-butyl hydroquinone, 2,5-di-tert-butyl hydroquinone and 2,5-di-tert-amyl hydroquinone.

Method for stabilizing a sex pheromone compound

Biodegradable sustained-release preparation, biodegradable pheromone

Biodegradable sustained-release preparation

An object of the present invention is to provide a method for the preparation of geometrical isomers which are important as constituents of synthetic pheromones, synthetic perfumes, terpenes and the like (i.e., a method for the isomerization of cis-alkenyl compounds to their trans-isomers). In this method, the above-described object is accomplished by reacting a cis-alkenyl compound in the presence of nitric acid used as the sole catalyst.

Growing community of inventors

Joetsu, Japan

Toyohisa Sakurada