Shin-etsu Chemical Co., Ltd.

Shin-etsu Handotai Co., Ltd.

Naoetsu Electronics Co., Ltd.

Toyohiro Ueguri

Masatoshi Takahashi

Takenori Watabe

Hiroyuki Ohtsuka

Naoki Ishikawa

Satoyuki Ojima

Shigenori Saisu

Kenji Yamamoto

Hiroyuki Otsuka

Hiroshi Hashigami

Shintarou Tsukigata

Takeshi Akatsuka

Toshifumi Matsuoka

Tsutomu Onishi

A method for producing a solar cell having good photoelectric conversion characteristics with high productivity, including the steps of: forming a first electrode on a first main surface of a semiconductor substrate; applying an insulator film precursor to cover at least part of the first electrode; temporarily curing the insulator film precursor; applying a conductive paste to at least the insulator film precursor; curing the conductive paste to form a second electrode; and completely curing the insulator film precursor to form an insulator film, the method in which the step of applying the conductive paste so as to be electrically insulated from the first electrode is performed after the step of temporarily curing the insulator film precursor and at least part of the steps of curing the conductive paste to form the second electrode and completely curing the insulator film precursor to form the insulator film are concurrently performed.

Method for producing high-efficiency solar cell

A semiconductor substrate having an electrode formed thereon, the electrode including at least silver and glass frit, the electrode including: a multi-layered structure with a first electrode layer joined directly to the semiconductor substrate, and an upper electrode layer formed of at least one layer and disposed on the first electrode layer. The upper electrode layer is formed by firing a conductive paste having a total silver content of 75 wt % or more and 95 wt % or less, the content of silver particles having an average particle diameter of 4 &#x3bc;m or greater and 8 &#x3bc;m or smaller with respect to the total silver content in the upper electrode layer being higher than that in the first electrode layer.

Semiconductor substrate, electrode forming method, and solar cell fabricating method

Disclosed is a phosphorus paste for diffusion that is used in continuous printing of a phosphorus paste for diffusion on a substrate by screen printing. The phosphorus paste for diffusion does not undergo a significant influence of ambient humidity on viscosity and has no possibility of thickening even after a large number of times of continuous printing. The phosphorus paste for diffusion is coated on a substrate by screen printing for diffusion layer formation on the substrate. The phosphorus paste for diffusion includes a doping agent containing phosphorus as a dopant for the diffusion layer, a thixotropic agent containing an organic binder and a solid matter, and an organic solvent. The doping agent is an organic phosphorus compound.

Phosphorus paste for diffusion and process for producing solar battery utilizing the phosphorus paste

The present invention is directed to a semiconductor substrate having at least an electrode formed thereon, in which the electrode has a multilayer structure including two or more layers, of the multilayer structure, at least a first electrode layer directly bonded to the semiconductor substrate contains at least silver and a glass frit, and contains, as an additive, at least one of oxides of Ti, Bi, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Si, Al, Ge, Sn, Pb, and Zn, and, of an electrode layer formed on the first electrode layer, at least an uppermost electrode layer to be bonded to a wire contains at least silver and a glass frit and does not contain the additive. This makes it possible to form, on a semiconductor substrate, an electrode adhered to the semiconductor substrate with sufficient adhesive strength and adhered to a wire via solder with sufficient adhesive strength by lowering both contact resistance and interconnect resistance.

Semiconductor substrate, method for forming electrode, and method for fabricating solar cell

The present invention is directed to a semiconductor substrate having an electrode formed thereon, the electrode including at least silver and glass frit, the electrode including: a multi-layered structure constituted of a first electrode layer joined directly to the semiconductor substrate, and an upper electrode layer formed of at least one layer and disposed on the first electrode layer; wherein the upper electrode layer is formed by firing a conductive paste having a total silver content of 75 wt % or more and 95 wt % or less, the content of silver particles having an average particle diameter of 4 &#x3bc;m or greater and 8 &#x3bc;m or smaller with respect to the total silver content in the upper electrode layer being higher than that in the first electrode layer. As a consequence, it is possible to form the electrode, which has the high aspect ratio and hardly suffers an inconvenience such as a break, on the semiconductor substrate by a simple method.

Growing community of inventors

Annaka, Japan

Toyohiro Ueguri