Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Denki Kabushiki

Toyohiro Uchiumi

Takeo Saikatsu

Ko Sano

Kanzou Yoshikawa

Takao Yasue

Shigenori Yagi

Takayoshi Nagai

Takashi Yamamoto

Akira Ishimori

Shinichiro Nagano

Mayumi Fujimura

Barrier ribs of the second type ( ) of the same height and material as barrier ribs of the first type ( ) are formed on a second substrate in parallel with each other along a first direction (D ) to which display electrodes XE and YE extend. Further, phosphors ( ) adhere to both side surface portions ( W and W ) of the barrier ribs of the second type ( ). This achieves a surface discharge type PDP capable of reducing a loss of ultraviolet rays due to repetition of the self absorption and emission of ultraviolet rays, and preventing the leakage of luminescence and discharge to adjacent display lines.

Surface discharge type plasma display panel with intersecting barrier ribs

Of three primary color phosphors ( ) formed in unit luminescent areas (EU) constituting a pixel (EG), the width of a blue phosphor ( B) is about twice the width of red and green phosphors ( R, G). This allows a white color temperature of 9300 K without causing deterioration of the phosphors ( ) and degrading red and green gradations.

Surface discharge type plasma display panel with blue luminescent area substantially wider than red and green luminescent areas

Barrier ribs of the second type (,) of the same height and material as barrier ribs of the first type (,) are formed on a second substrate in parallel with each other along a first direction (D,) to which display electrodes XE and YE extend. Further, phosphors (,) adhere to both side surface portions (,W,and,W,) of the barrier ribs of the second type (,). This achieves a surface discharge type PDP capable of reducing a loss of ultraviolet rays due to repetition of the self absorption and emission of ultraviolet rays, and preventing the leakage of luminescence and discharge to adjacent display lines.

A semiconductor-laser-pumped, solid-state laser includes a semiconductor pumping laser emitting pumping light, a solid-state laser medium arranged to be excited by the pumping light, and a laser resonator structure for emitting laser light from the solid-state laser medium. The solid-state laser medium is plate shaped having a thickness less than the broadening width of he pumping light in the solid-state laser medium. The semiconductor laser is arranged close to the face of the solid-state laser medium, and the laser resonator structure has an optical axis thereof coinciding with that of the pumping light.

Semiconductor-laser-pumped, solid-state laser

Growing community of inventors

Tokyo, Japan

Toyohiro Uchiumi