National Institute for Materials Science

Other

Tokyo Institute of Technology

Toyohiro Chikyo

Jin Kawakita

Toshihide Nabatame

Akihiko Ohi

Michiko Yoshitake

Isao Kuwajima

Naoto Umezawa

Shinjiro Yagyu

Tomoko Ohki

Hideomi Koinuma

Tadashi Shinohara

Naoki Ikeda

Yusuke Moriyoshi

Masahiro Tosa

Masahiro Goto

Kazuhito Tsukagoshi

Shojiro Komatsu

Akira Kasahara

Yoshinori Konishi

Yoshiyuki Yonezawa

Katsuyuki Okada

Michiko Sasaki

Parhat Ahmet

Shinya Aikawa

Takayuki Nakane

Jeong-Hwan Song

Young Zo Yoo

Motoharu Imai

Yasuo Hashimoto

Mamoru Yoshimoto

Barbara Horvath

Kenji Ohmori

The present invention is to provide a prevention method and a prevention system for preventing dew condensation and light scattering due to the dew condensation. According to one embodiment of the present invention, a fine liquid droplet capable of causing dew condensation is detected by a detection means for detecting a fine liquid droplet, and then the fine liquid droplet is removed on the basis of the detection. The detection means comprises a first thin wire made of a first metal, and a second thin wire made of a second metal or a semiconductor, the second metal is different from the first metal, the first thin wire and the second thin wire are disposed in juxtaposition with each other on an insulating substrate, and a spacing between the first thin wire and the second thin wire is in a range of 20 nm or more and 10000 nm or less. Further, provided is a prevention system including a detection means for detecting a fine liquid droplet, a removing means for removing the fine liquid droplet, and a control means for controlling the removing means on the basis of information from the detection means.

Method and system for preventing dew condensation and light scattering due to dew condensation

The present invention is to provide a small-sized dryness/wetness responsive sensor that detects a galvanic current with a high sensitivity as a principle of operation. According to one embodiment of the present invention, a dryness/wetness responsive sensor comprises a thin wire made of a first metal and a thin wire made of a second metal, the second metal is different from the first metal, the thin wire of the first metal and the thin wire of the second metal are disposed in juxtaposition with each other on an insulating substrate, and a surface state of a part between the thin wire of the first metal and the thin wire of the second metal is hydrophilic or hydrophobic.

Dryness/wetness responsive sensor

The purpose of the present invention is to realize a dew point measurement in which the generation of dew condensation is directly detected and the detection can be performed without using any optical system. In particular, the purpose of the present invention is to realize a dew point measuring device that is compact and has a high sensitivity. According to one embodiment of the present invention, a sudden change in current values before and after the dew point is detected by detecting the dew condensation to detect a galvanic current that flows due to a water droplet attached onto a surface of an insulating substrate on which thin wires of dissimilar metals are juxtaposed, and by controlling the temperature on the surface of the substrate. In this way, the dew point measurement in which the dew point can be directly measured and a measurement with simple configuration and high accuracy can be performed can be realized.

Dew point measuring method and dew point measuring device

The present invention searches for, in order of priority, a combination of material property parameters having a significant relationship, from among arbitrary combinations of multiple material property parameters. The present invention comprises a database stored in a storage device, a graph generation step, a graph search step, and a prioritization step, wherein the database stores multiple pairs of material property parameters having mutual relationship; the graph generation step includes generating a graph in which the multiple material property parameters stored in the database are represented as nodes, and inter-node spaces corresponding to the respective material property parameter pairs each being stored as having a relationship therebetween are represented as edges; the graph search step includes searching the graph on the basis of a given search condition and presenting multiple related material properties or inter-material property relationship paths representing relationships between material properties; and the prioritization step includes obtaining, by using information about one or both of the nodes and the edges, priority for the presented multiple related material properties or inter-material property relationship paths, and outputting a result in the descending order of priority.

Search method, search device, and search system

Provided are a search system and a search method capable of searching an unknown combination of material property parameters having a significant relationship based on already known relationships from among multiple arbitrary combinations of material property parameters. The search system includes a database, a graph generator, and a graph searcher, and is configured as follows: the database stores the plurality of pairs of material property parameters having mutual relationships, and the graph generator generates a graph in which material property parameters stored in the database are nodes, and an inter-node corresponding to the pairs of material property parameters stored to have mutual relationships is an edge. The graph searcher searches the graph generated by the graph generator based on a given search condition and outputs a search result.

Search system, search method, and material property database management apparatus

The purpose of the present invention is to measure a size of a liquid droplet easily and in a short period of time by combining outputs of multiple types of liquid droplet detectors having different size dependencies of a liquid droplet of detection signals. In one embodiment of the present invention, in the detector having a narrow gap width shown in FIG.(), the electrodes are electrically conducted by the attachment of a small liquid droplet. On the other hand, in the detectors with a wide gap width shown in FIGS.() and(), the electrodes are not electrically conducted unless a liquid droplet having a larger size is attached. By utilizing this, the size of a liquid droplet is determined. In a case where the liquid droplet is water, as a liquid droplet detector, for example, a detector of a type that detects a galvanic current by a cell formed by the attachment of water between the electrodes made of different kinds of metals may be used.

Droplet size determining device and droplet size determining method

A dryness/wetness responsive sensor having decreased size, and improved sensitivity and responsiveness. The present invention comprises a thin wire of a first metal and a thin wire of a second metal, which is different from the first metal, wherein the thin wires run in juxtaposition with each other on an insulating substrate, and wherein the spacing between the first thin wire and the second thin wire is in the range of 5 nm or more and less than 20 &#x3bc;m.

Dryness/wetness responsive sensor having first and second wires spaced 5 nm to less than 20 &#x3bc;m apart

A process of producing a conducting material suitable for being filled in TSVs for LSI chip 3D package, etc. includes that a solution containing a monomer that provides a conducting polymer, anions, and metal ions such as Agor Cuis irradiated with ultraviolet radiation or light having the energy necessary for exciting electrons up to an energy level capable of reducing the metal ions to precipitate a conducting polymer/metal composite. This enables an electrical conductor of high electrical conductivity to be precipitated faster than could be achieved by conventional processes.

Process for precipitation of conducting polymer/metal composites, and conducting polymer/metal composites

Provided is a polymer nanowire which contains nanoparticles so as to have new functionalities. A thin film is formed on a substrate and includes functional nanoparticles and polymers, and further includes a photosensitive pigment as required. The thin film is irradiated with a pulsed laser. This causes a polymer nanowire containing the functional nanoparticles to grow from a surface of the thin film.

Nanoparticle-containing polymer nanowire and method for producing the same

The present invention provides a thin-film transistor in which transistor characteristics such as drain current and threshold voltage are improved, and a method of manufacturing the same. The present invention provides a thin-film transistor provided with a source electrode (), a drain electrode (), a semiconductor layer (), a gate electrode (), and an insulating layer (); wherein the semiconductor layer () contains a composite metal oxide obtained by adding to a first metal oxide an oxide having an oxygen dissociation energy that is at least 200 kJ/mol greater than the oxygen dissociation energy of the first metal oxide, whereby the amount of oxygen vacancy is controlled; and the insulating layer () is provided with an SiOlayer, a high-permittivity first layer, and a high-permittivity second layer, whereby the dipoles generated at the boundary between the SiOlayer and the high-permittivity layers are used to control the threshold voltage.

Thin-film transistor and method for manufacturing same

A resist film structure is provided, which allows a resist layer to have improved photosensitivity to EUV or electron beams without changing the photosensitivity of the resist material itself. A metal layerwith a thickness as small as a nanometer level is provided on a resist polymer layerformed on a substrate. When the resist layer in this structure is exposed to light, the metal layerproduces a surface plasmon effect to enhance the irradiation to the resist film, so that the photosensitivity of the resist film is improved.

High-sensitivity multilayer resist film and method of increasing photosensitivity of resist film

A conductive polymer-metal complex becomes to be adhered simply and strongly on the surface of a substrate such as PTFE. By subjecting a solution containing a monomer which provides a conductive polymer, an anion, and a metal ions such as Ag, Cu, Cuand the like to an irradiation with light having an energy required for exciting an electron to an energy level capable of reducing the metal ion, such as ultraviolet light, under an appropriated condition, thereby precipitating the conductive polymer-metal complex as being dispersed in the reaction liquid. By supplying this dispersion liquid onto various substrates, the complex microparticles in the dispersion liquid enter into and mate with the narrow holes on the surface of the substrate. As a result, the complex precipitate formed on the surface of the substrate and the substrate can be adhered strongly to each other.

Adhesive body comprising conductive polymer-metal complex and substrate and method for forming the same, conductive polymer-metal complex dispersion liquid, method for manufacturing the same and method for applying the same, and method for filling hole using conductive material

To provide a method for reducing a thickness of an interfacial layer, which contains: (a) forming a film of an oxide of a first metal on a semiconductor layer via an oxide film of a semiconductor serving as an interfacial layer; and (b) forming a film of an oxide of a second metal on the film of the oxide of the first metal, where the second metal has higher valency than that of the first metal.

Method for reducing thickness of interfacial layer, method for forming high dielectric constant gate insulating film, high dielectric constant gate insulating film, high dielectric constant gate oxide film, and transistor having high dielectric constant gate oxide film

To provide a method for reducing a thickness of an interfacial layer, which contains: (a) forming a film of an oxide of a first metal on a semiconductor layer via an oxide film of a semiconducdor serving as an interfacial layer; and (b) forming a film of an oxide of a second metal on the film of the oxide of the first metal, where the second metal has higher valency than that of the first metal.

In an electron emission method, a voltage is applied to a field electron emission element that has a boron nitride material containing crystal, formed on an element substrate to show a conical projection of the boron nitride material and shows a stable electron emitting property in an atmosphere when a voltage is applied thereto to emit electrons. An electron emission threshold of the field electron emission element falls due to formation of a surface electric dipolar layer by bringing it into contact with an operating atmosphere containing polar solvent gas when applying a voltage to the field electron emission element so as to emit electrons.

Field electron emission element, a method of manufacturing the same and a field electron emission method using such an element as well as an emission/display device employing such a field electron emission element and a method of manufacturing the same

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Ibaraki, Japan

Toyohiro Chikyo