Nippon Mining Co., Ltd.

Japan Energy Corporation

Nikko Kyodo Co., Ltd.

Toyoaki Imaizumi

Osamu Oda

Mitsuaki Seiwa

Hironobu Sawatari

An undoped p-type GaAs epitaxial layer or an n-type GaAs epitaxial layer is grown on the surface of a wafer, and thereafter the wafer is annealed at a temperature which ranges from 800.degree. C. to 1,200.degree. C. and is equal to or higher than a predetermined critical temperature depending on the carrier concentration in the epitaxial layer before it is annealed. The epitaxial layer thus annealed is rendered semi-insulating without addition of any impurity. Accordingly, performances of an electronic device which incorporates such a wafer are improved.

Method of manufacturing compound semiconductor wafer

A method of fabricating a Schottky electrode by the adsorption of thin layer with not more than 10 monolayers of a metal whose oxide is stable on a III-V compound semiconductor substrate such as InP or on a substrate, the surface on which epitaxial layer is grown, and the successive oxidation of the thin metal film is disclosed. Since the generation of dangling bonds at the interface due to the elastic strain between the substrate and the metal oxide can be prevented, it becomes possible to obtain a Schottky electrode with a high Schottky barrier height and thus to fabricate MESFETs and Schottky diodes having good characteristics such as a small reverse leak current and a large break-down voltage.

Method of fabricating a compound semiconductor device

A vapor-phase epitaxial process enabling easy growth of a III-V compound semiconductor layer including a .delta.-doped layer requires essentially no change or rearrangement of the conventional vapor-phase epitaxial reactor system but only a simple change in the method of controlling the system. The epitaxial process includes the step of feeding an epitaxial growth gas into a reactor vessel containing a III group element as a raw material and an epitaxial substrate made of a semiconductor to epitaxially grow a layer made of a III-V compound semiconductor on the substrate by the chloride CVD process. The epitaxial process also includes the steps of displacing the gas in the reactor vessel with an inert gas, feeding an epitaxial growth gas consisting of a chloride of a V group element and a carrier gas to grow a buffer layer on the substrate, interrupting the epitaxial growth gas feeding step, feeding only the carrier gas to a boat for raw material in the reactor vessel for causing a melt of the III group element to appear on the surface of a melt in the boat, and feeding the epitaxial growth gas to the substrate to grow a semiconductor layer doped by an impurity in a .delta.-function deposition profile.

Growing community of inventors

Toda, Japan

Toyoaki Imaizumi