Hitachi, Ltd.

Toshiyuki Yoshimura

Hideyuki Matsuoka

Shinji Okazaki

Eiji Takeda

Shoji Shukuri

Digh Hisamoto

Natsuki Yokoyama

Hiromasa Noda

Shinichiro Kimura

Kazunori Tsujimoto

Kazuyoshi Torii

Hiroshi Shiraishi

Yasutsugu Yoshimura

Yoshio Takakura

Shigeru Kakumoto

Yuji Toda

Minoru Toriumi

Yasuo Igura

Hidekazu Tabata

Yujirou Kobayashi

Naoko Miura

A cluster type rolling mill comprises a pair of work rolls, intermediate rolls, backing rolls, backing roll chock movable in the up and down directions, intermediate roll chocks held by the backing roll chocks work roll chocks held by the intermediate roll chocks hydraulic cylinders for shifting the intermediate rolls in the axial direction and hydraulic cylinders for applying bending force to the intermediate rolls and work rolls.

Cluster type rolling mill and rolling method

In forming a thin film pattern, first a seed material film is formed on a substrate and then exposed using electron beam lithography, for example, in the shape of the pattern. The latent image is then removed and an oriented material is deposited on one of the seed material and the substrtate, which have different hydrophilicity properties, to form the pattern. The oriented film is formed by an LB film forming method, in one example, and in another example the LB film material is a cresol novolak resin having a proportion of p-cresol novolak to m-cresol novolak of at least 20%.

Method for forming a pattern and forming a thin film used in pattern

A high density storage medium which stores predetermined information by matching it on one-to-one basis with multiple levels of depth or height formed in predetermined plural areas of substrate surface, a storing method, a reading method and various systems using them have been disclosed.

High density storage of information on a substrate with multiple depth

A very thin oxide film is formed at an opening formed in an insulator film and a conductor layer, on a substrate, and impurity-containing polysilicon is formed on the sidewall of the opening. Impurity diffusion from the from the silicon into the substrate through the very thin oxide film causes a lowering in effective concentration of the diffused impurities, resulting in the formation of shallower source/drain region. Thereafter, a gate insulator film and a gate electrode are formed on the substrate surface in an area bounded by an insulator film formed on the sidewall of the opening. The gate electrode smaller than the opening, the size of which corresponds to the limit of processing, and the shallower source/drain region afford a miniaturized MOSFET.

Process for fabricating field effect transistor

A semiconductor field effect transistor is provided which permits controlling of the phase of carriers between a source region and a drain region formed in a first semiconductor layer. Such control can be used to modulate characteristics such as the electric conductivity and drain current of the transistor. To accomplish this control, a gate electrode is formed over a portion of said first semiconductor layer between the source and drain regions. The gate electrode splits to form first and second branches at a first location adjacent to the source region. These first and second branches subsequently rejoin one another at a second location adjacent to said drain region. When a potential is applied to the gate electrode, it will produce first and second two-dimensional carriers conduction paths at a surface of the portion of the first semiconductor layer under the first and second branches. An arrangement is provided for modifying the phase of carriers passing through the first conduction path relative to the phase of carriers passing through the second conduction path to produce a phase difference for carriers received at the drain region through said first and second conduction paths.

Semiconductor device with a split conduction channel

Growing community of inventors

Kokubunji, Japan

Toshiyuki Yoshimura