Hitachi-High-Technologies Corporation

Hitachi High-Tech Corporation

Hitachi, Ltd.

Toshiyuki Yokosuka

Hideyuki Kazumi

Chahn Lee

Hajime Kawano

Kinya Kobayashi

Kiyomi Yoshinari

Atsumu Hirabayashi

Hiroyuki Takahashi

Yasushi Terui

Shahedul Hoque

Kumiko Shimizu

Minoru Yamazaki

Daisuke Bizen

Yuzuru Mizuhara

Kouichi Kurosawa

Yuzuru Mochizuki

Makoto Suzuki

Natsuki Tsuno

Yuko Sasaki

Kenko Uchida

Ryozo Takeuchi

Yusuke Abe

Takafumi Miwa

Hiroshi Morita

Mayuka Osaki

Hirohiko Kitsuki

Akihiro Sano

Kenji Yasui

Atsushi Ohtake

Tomohito Nakano

Yuichiro Hashimoto

Yoshinobu Kimura

Hiroshi Makino

Makoto Sakakibara

Manabu Hasegawa

Michio Hatano

Yoshinori Momonoi

Kazutami Tago

Miki Isawa

Atsushi Otake

Atsushi Ootake

Hideyuki Kotsuji

Kenichi Myochin

A charged particle beam device includes: a plasma generation device attached to a sample chamber through a connecting member; a guide including a hollow portion configured to guide a plasma generated by the plasma generation device in a direction toward a stage; a first voltage source configured to apply a voltage to the stage; and a second voltage source configured to adjust the plasma generation device and the guide to a predetermined potential, in which the guide is disposed to avoid an opening of an objective lens through which a charged particle beam passes and to position a tip of the guide between the objective lens and the stage.

Charged particle beam device

The scanning charged particle beam microscope according to the present application is characterized in that, in acquiring an image of the FOV (field of view), interspaced beam irradiation points are set, and then, a deflector is controlled so that a charged particle beam scan is performed faster when the charged particle beam irradiates a position on the sample between each of the irradiation points than when the charged particle beam irradiates a position on the sample corresponding to each of the irradiation points (a position on the sample corresponding to each pixel detecting a signal). This allows the effects from a micro-domain electrification occurring within the FOV to be mitigated or controlled.

The objective of the present invention is to use brightness images acquired under different energy conditions to estimate the size of a defect in the depth direction in a simple manner. A charged-particle beam device according to the present invention determines the brightness ratio for each irradiation position on a brightness image while changing parameters varying the signal amount, estimates the position of the defect in the depth direction on the basis of the parameters at which the brightness ratio is at a minimum, and estimates the size of the defect in the depth direction on the basis of the magnitude of the brightness ratio (see FIG.).

Charged-particle beam device and cross-sectional shape estimation program

The present disclosure provides a pattern cross-sectional shape estimation system which includes a charged particle ray device which includes a scanning deflector that scans a charged particle beam, a detector that detects charged particles, and an angle discriminator that is disposed in a front stage of the detector and discriminates charged particles to be detected, and an arithmetic device that generates a luminance of an image, and calculates a signal waveform of a designated region on the image using the luminance. The arithmetic device generates angle discrimination images using signal electrons at different detection angles, and estimates a side wall shape of a measurement target pattern.

Pattern cross-sectional shape estimation system and program

To measure a depth of a three-dimensional structure, for example, a hole or a groove, formed in a sample without preparing information in advance, an electron microscope detects, among emitted electrons generated by irradiating a sample with a primary electron beam, an emission angle in a predetermined range, the emission angle being formed between an axial direction of the primary electron beam and an emission direction of the emitted electrons, and outputs a detection signal corresponding to the number of the emitted electrons detected. An emission angle distribution of a detection signal is obtained based on a plurality of detection signals, and an opening angle is obtained based on a change point of the emission angle distribution, the opening angle being based on an optical axis direction of the primary electron beam with respect to the bottom portion of the three-dimensional structure.

Scanning electron microscope and calculation method for three-dimensional structure depth

The purpose of the present invention is to provide a charged particle ray device which is capable of simply estimating the cross-sectional shape of a pattern. The charged particle ray device according to the present invention acquires a detection signal for each different discrimination condition of an energy discriminator, and estimates the cross-sectional shape of a sample by comparing the detection signal for each discrimination condition with a reference pattern (see FIG.).

Charged particle ray device and cross-sectional shape estimation program

Provided is a scanning electron microscope. The scanning electron microscope is capable of removing a charge generated on a side wall of a deep hole or groove, and inspects and measures a bottom portion of the deep hole or groove with high accuracy. Therefore, in the scanning electron microscope that includes an electron sourcethat emits a primary electron, a sample stageon which a sample is placed, a deflectorthat causes the sample to be scanned with the primary electron, an objective lensthat focuses the primary electron on the sample, and a detectorthat detects a secondary electron generated by irradiating the sample with the primary electron, a potential applied to the sample stage is controlled to have a negative polarity with respect to a potential applied to the objective lens during a first period in which the sample is irradiated with the primary electron, and the potential applied to the sample stage is controlled to have a positive polarity with respect to the potential applied to the objective lens during a second period in which the sample is not irradiated with the primary electron.

Scanning electron microscope and sample observation method using scanning electron microscope

A charged particle beam device includes an electron source which generates an electron beam, an objective lens which is applied with a coil current to converge the electron beam on a sample, a control unit which controls the current to be applied to the objective lens, a hysteresis characteristic storage unit which stores hysteresis characteristic information of the objective lens, a history information storage unit which stores history information related to the coil current, and an estimation unit which estimates a magnetic field generated by the objective lens on the basis of the coil current, the history information, and the hysteresis characteristic information.

Charged particle beam device and capturing condition adjusting method in charged particle beam device

A charged particle beam apparatus with reduced frequency of lens resetting operations and thus with improved throughput. The apparatus includes an electron source configured to generate an electron beam, an objective lens to which coil current is adapted to be applied to converge the electron beam on a sample, a focal position adjustment device configured to adjust the focal position of the electron beam, a detector configured to detect electrons from the sample, a display unit configured to display an image of the sample in accordance with a signal from the detector, a storage unit configured to store information on the hysteresis characteristics of the objective lens, and an estimation unit configured to estimate a magnetic field generated by the objective lens on the basis of the coil current, the amount of adjustment of the focal position by the focal position adjustment device, and the information on the hysteresis characteristics.

Charged particle beam apparatus and method for adjusting imaging conditions for the same

The purpose of the present invention is to reduce the amount of charged particles that are lost by colliding with the interior of a column of a charged particle beam device, and detect charged particles with high efficiency. To achieve this purpose, proposed is a charged particle beam device provided with: an objective lens that focuses a charged particle beam; a detector that is disposed between the objective lens and a charged particle source; a deflector that deflects charged particles emitted from a sample such that the charged particles separate from the axis of the charged particle beam; and a plurality of electrodes that are disposed between the deflector and the objective lens and that form a plurality of electrostatic lenses for focusing the charged particles emitted from the sample on a deflection point of the deflector.

Provided is a charged particle beam device that enables, even if a visual field includes therein a plurality of regions having different secondary electron emission conditions, the setting of appropriate energy filter conditions adapted to each of these regions. The charged particle beam device is equipped with a detector for detecting charged particles obtained on the basis of scanning, over a sample, a charged particle beam emitted from a charged particle source, and an energy filter for filtering by energy the charged particles emitted from the sample. Index values are determined for the plurality of regions contained within the scanning region of the charged particle beam, and, for each of a plurality of energy filter conditions, differences are calculated between the plurality of index values and the reference index values that have been set for each of the plurality of regions.

The present invention provides a charged particle beam device capable of predicting the three-dimensional structure of a sample, without affecting the charge of the sample. The present invention provides a charged particle beam device characterized in that a first distance between the peak and the bottom of a first signal waveform obtained on the basis of irradiation with a charged particle beam having a first landing energy, and a second distance between the peak and the bottom of a second signal waveform obtained on the basis of irradiation with a charged particle beam having a second landing energy different from the first landing energy are obtained, and the distance between the peak and the bottom at a landing energy (zero, for instance) different from the first and second landing energies is obtained on the basis of the extrapolation of the first distance and the second distance.

Charged particle beam device and pattern measurement device

Growing community of inventors

Tokyo, Japan

Toshiyuki Yokosuka