Pioneer Corporation

Pioneer Electronic Corporation

Toshiyuki Tanaka

Hiroyuki Ota

Atsushi Watanabe

Isamu Akasaki

Hiroshi Amano

Yoshinori Kimura

Mamoru Miyachi

Hirokazu Takahashi

Kiyofumi Chikuma

Katsuhide Manabe

Hitoshi Sato

Atsuya Ito

Teruo Tohma

A nitride compound semiconductor laser, of which driving voltage is low and transverse mode of light is stable, having a plurality of crystal layers made of a group III nitride compound semiconductor expressed by the formula (AlGa ) In N (0&lE;x&lE;1, 0&lE;y&lE;1). The layers include an active layer-side guide layer which is adjacent to an active layer in the crystal layers of the group III nitride compound semiconductor and made of Al Ga In N (0&lE;x&prime;&lE;1, 0&lE;y&prime;&lE;1), a current constricting AlN layer deposited on said guide layer and having a stripe-shape aperture, an electrode-side guide layer made of Al Ga In N (0&lE;x&Prime;&lE;1, 0&lE;y&Prime;&lE;1) and deposited filling the aperture of the current constricting layer, and a clad layer made of Al Ga In N (0&lE;u&lE;1, 0&lE;v&lE;1) and deposited on the electrode-side guide layer.

Group III nitride compound semiconductor laser and manufacturing method thereof

A method for fabricating a nitride semiconductor laser device having crystal layers each made of a group III nitride semiconductor (Al Ga ) In N (0&lE;x&lE;1, 0&lE;y&lE;1) layered in order on a ground layer (Al Ga ) In N (0&lE;x&prime;&lE;1, 0&lE;y&prime;&lE;1). The method including a step of forming a plurality of crystal layers each made of group III nitride semiconductor on a ground layer formed on a substrate such as sapphire; a step of applying a light beam from the substrate side toward the interface between the substrate and the ground layer thereby forming the decomposed-matter area of a nitride semiconductor; a step of separating the ground layer carrying the crystal layers from the substrate along the decomposed-matter area; and a step of cleaving the ground layer thereby forming a cleavage plane of the crystal layers.

Nitride semiconductor laser and method of fabricating the same

Method for manufacturing a nitride semiconductor device and device manufactured by the method

A semiconductor light emitting device having multi-layer structure of group-3 nitride-based semiconductors is disclosed. The light emitting device has lower density of threading dislocation extending from a boundary of a crystal substrate through the multi-layer structure, thereby obtaining good luminescence characteristics. The nitride semiconductor light emitting device has the multi-layer structure. The multi-layer structure comprises a first crystal layer containing substantially pyramidal crystal grains, each of grains has a crystal face non-parallel to a surface of the substrate, and the pyramidal crystal grains are distributed at random like islands. The structure further comprises a second crystal layer formed on the first crystal layer with a compound having a different lattice constant from that of the first crystal layer. The second crystal layer smoothes a surface of the first crystal layer parallel to the surface of the substrate.

Nitride-based semiconductor light emitting device and manufacturing method therefor

A GaN-based semiconductor light emitting device is provided that has superior light emitting characteristics by controlling occurrence of a threading dislocation and keeping the flatness of a film GaN-based semiconductor light emitting device fabrication method comprises forming steps of at least forming an undoped gallium-nitride underlying layer on a low-temperature buffer layer while keeping the pressure in a reactor at a value close to atmospheric pressure.

Gallium-nitride-based semiconductor light emitting device and fabrication method

In a semiconductor light-emitting device having a multilayered structure which consists essentially of layers of Group III nitride semiconductors (Al,Ga,),In,N (0&lE;x&lE;1, 0&lE;y&lE;1) which are different from each other in chemical composition ratio, generation of cracks at an interface propagating from an interface between adjacent layers is prevented. Two adjacent layers within the multilayered structure, which include a lower layer having a lattice constant larger than a lattice constant of an upper layer of the two adjacent layers, have a portion close to the interface of the two adjacent layers doped such that an element different from the Group III nitride semiconductors is added in a higher concentration, i.e. in a higher distribution density than in other portions thereof.

Group III nitride semiconductor light-emitting device having anticracking feature

A process for producing a semiconductor emitting device of group III nitride semiconductor having a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) includes; a step of forming at least one pn-junction or pin-junction and a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) to which a group II element is added; and a step of forming electrodes on the crystal layer. The process further includes an electric-field-assisted annealing treatment in which the pn-junction or pin-junction is heated to the predetermined temperature range while forming and maintaining an electric field across the pn-junction or pin-junction for at least partial time period of the predetermined temperature range via the electrodes.

Process for producing a luminous element of group III nitride

Disclosure is a process for producing a luminous element of III-group nitride semiconductor having a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) to which a II-group element is added, comprising the steps of forming a crystal layer (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y N (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) to which a II-group element is added; irradiating a low energy electron beam onto a topmost surface of the crystal layer to reform only the crystal layer; forming a thin film for absorbing optical energy on the topmost surface of the crystal layer; and pulse-heating the thin film for absorbing optical energy by heating means to reform only the crystal layer, thereby to produce a bluish green, blue or UV light emitting diode or a semiconductor laser diode with a high precision color purity.

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Tsurugashima, Japan

Toshiyuki Tanaka