Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Matsushita Electric Industrial Co., Ltd.

Toshiyuki Takizawa

Tetsuzo Ueda

Daisuke Ueda

Masaaki Yuri

Kazuhiko Yamanaka

Satoshi Nakazawa

Jun Shimizu

Hisashi Nakayama

Shinichiro Nozaki

Manabu Usuda

A nitride semiconductor structure includes a Group III nitride semiconductor portion and a Group II-IV nitride semiconductor portion. The Group III nitride semiconductor portion is single crystalline. The Group III nitride semiconductor portion has a predetermined crystallographic plane. The Group II-IV nitride semiconductor portion is provided on the predetermined crystallographic plane of the Group III nitride semiconductor portion. The Group II-IV nitride semiconductor portion is single crystalline. The Group II-IV nitride semiconductor portion contains a Group II element and a Group IV element. The Group II-IV nitride semiconductor portion forms a heterojunction with the Group III nitride semiconductor portion. The predetermined crystallographic plane is a crystallographic plane other than a (0001) plane.

Nitride semiconductor structure, nitride semiconductor device, and method for fabricating the device

A nitride semiconductor light emitting device includes: an uneven substrate having an uneven structure in which recesses are formed; a first nitride semiconductor layer of a first conductive type formed on the uneven structure; a first light emitting layer formed on the first nitride semiconductor layer; and a second nitride semiconductor layer of a second conductive type formed on the light emitting layer, wherein each protrusion has a bottom made of a material or composition having a thermal expansion coefficient larger than the thermal expansion coefficient of the material or composition of the first nitride semiconductor layer.

Nitride semiconductor light emitting device and method of manufacturing the same

An object of the present invention is to provide a nitride semiconductor device which shifts a luminescence wavelength toward a longer wavelength side without decreasing luminescence efficiency, and the nitride semiconductor device according to an implementation of the present invention includes: a GaN layer having a (0001) plane and a plane other than the (0001) plane; and an InGaN layer which contacts the GaN layer and includes indium, and the InGaN layer has a higher indium composition ratio in a portion that contacts the plane other than the (0001) plane than in a portion that contacts the (0001) plane.

Nitride semiconductor device

The transistor includes an underlying layerformed on a substrate, and a first layer (including an operation layer) made of a nitride semiconductor formed on the underlying layer. The underlying layeris a multilayered structure including a plurality of stacked nitride semiconductor layers. The underlying layerincludes a transition-metal-containing layer containing at least one of cobalt, nickel, ruthenium, osmium, rhodium, or iridium which is a transition metal.

Transistor and method for manufacturing same

The nitride semiconductor material according to the present invention includes a group III nitride semiconductor and a group IV nitride formed on the group III nitride semiconductor, where an interface between the group III nitride semiconductor and the group IV nitride has a regular atomic arrangement. Moreover, an arrangement of nitrogen atoms of the group IV nitride in the interface and an arrangement of group III atoms of the group III nitride semiconductor in the interface may be substantially identical.

Nitride semiconductor material, semiconductor element, and manufacturing method thereof

A nitride semiconductor light-emitting device includes a substrate () made of silicon, a mask film () made of silicon oxide, formed on a principal surface of the substrate (), and having at least one opening (), a seed layer () made of GaN selectively formed on the substrate () in the opening (), an LEG layer () formed on a side surface of the seed layer (), and an n-type GaN layer (), an active layer (), and a p-type GaN layer () which are formed on the LEG layer (). The LEG layer () is formed by crystal growth using an organic nitrogen material as a nitrogen source.

Nitride semiconductor light-emitting device

A nitride semiconductor device includes: a substrate having a principal surface; a first nitride semiconductor layer formed on the principal surface of the substrate and includes one or more convex portions whose side surfaces are vertical to the principal surface; and a second nitride semiconductor layer selectively grown on the side surfaces of the one or more convex portions of the first nitride semiconductor layer.

Nitride semiconductor device and method for manufacturing the same

A semiconductor device, which includes an active layer made of a first semiconductor layer formed on a substrate, is designed so that a first oxidized area made of an oxide layer is formed on the active layer. The first oxidized area further aids in reducing a reactive current so that it becomes possible to achieve a semiconductor device having superior device characteristics.

Semiconductor device with oxidized regions and method for fabricating the same

A p-type semiconductor includes a host material that is a semiconductor, an acceptor element and a localized band formation element. The acceptor element is doped to the host material and has fewer valence electrons than valance electrons of at least one of the elements which compose the host material. The localized band formation element is doped to the host material, is isovalent with at least one of the elements which compose the host material, has smaller electronegativity than the electronegativity of the element(s), and forms the localized band which activates holes of an acceptor level.

P-type semiconductor and semiconductor hetero material and manufacturing methods thereof

A nitride semiconductor device includes an active layer including a first nitride semiconductor layer and a second nitride semiconductor layer which are periodically stacked, the second nitride semiconductor layer having a different composition from a composition of the first nitride semiconductor layer. An energy at a lower edge of a conduction band in the first nitride semiconductor layer is lower than an energy at a lower edge of a conduction band in the second nitride semiconductor layer, and an energy at an upper edge of a valence band in the first nitride semiconductor layer is lower than an energy at an upper edge of a valence band in the second nitride semiconductor layer.

Growing community of inventors

Kyoto, Japan

Toshiyuki Takizawa