Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Toshiyuki Takewaki

Ming Hu

Hiroyasu Tanaka

Masahisa Sonoda

Seiichi Omoto

Shingo Nakajima

According to an embodiment, a semiconductor memory device comprises: a memory string comprising a plurality of memory cells connected in series therein; and a contact electrically connected to one end of the memory string. The memory string comprises a plurality of control gate electrodes, and a semiconductor layer. The contact comprises a contact layer, the contact layer having a plate-like shape whose longer direction is a first direction parallel to the substrate, and the contact layer having its lower surface electrically connected to the one end of the semiconductor layer. Moreover, the contact layer includes a metal layer, a silicon based layer, and a second conductive layer. The metal layer includes tungsten. The silicon based layer includes a material including silicon. The second conductive layer covers side surfaces of the metal layer and the silicon based layer.

Semiconductor memory device having memory cells provided in a height direction

According to one embodiment, a semiconductor memory device includes a stacked body; a semiconductor body; a charge storage layer; a first conductor; a second conductor; and a third conductor. The stacked body includes a plurality of electrode layers stacked with an insulator interposed. The semiconductor body extends along a stacking direction of the stacked body. The first conductor is provided in the stacked body. The first conductor is in contact with the substrate. The second conductor includes a different material from the first conductor. The second conductor is in contact with a first portion of the first conductor. The third conductor includes a same material as the second conductor. The third conductor is in contact with a second portion of the first conductor.

Semiconductor memory device

According to an embodiment, a semiconductor memory device comprises: a memory string comprising memory cells; and a contact electrically connected to one end of the memory string. The memory string comprises: control gate electrodes stacked above a first semiconductor layer; a second semiconductor layer having one end connected to the first semiconductor layer and having as its longitudinal direction a direction perpendicular to the first semiconductor layer, the second semiconductor layer facing the control gate electrodes; and a charge accumulation layer positioned between the control gate electrode and the second semiconductor layer. The contact has a plate-like shape whose longitudinal direction is a first direction, the contact has its lower surface connected to the first semiconductor layer, and the contact has a height of at least part of its upper surface lower than a height of an upper surface of the second semiconductor layer.

Growing community of inventors

Yokkaichi, Japan

Toshiyuki Takewaki