Hoya Corporation

Toyota Jidosha Kabushiki Kaisha

Kabushiki Kaisha Toshiba

Kao Corporation

Ntt Docomo, Inc.

Tdk Corporation

Fuji Jukogyo Kabushiki Kaisha

Dai Nippon Printing Co., Ltd.

Tokyo Shibaura Denki Kabushiki Kaisha

Shin-Etsu Chemical Co., Ltd.

Yokogawa Electric Corporation

Kabushiki Kaisha Toyota Chuo Kenkyusho

Nippon Electric Co., Ltd.

Nuflare Technology, Inc.

Honda Giken Kogyo Kabushiki Kaisha

Toshiyuki Suzuki

Masahiro Hashimoto

Kenichi Yoshida

Kazuya Sakai

Osamu Nozawa

Yasuyuki Asai

Yasushi Okubo

Yasuharu Miyauchi

Shigenori Ishihara

Atsushi Kominato

Ryo Ohkubo

Toshihiro Azami

Masaru Mitsui

Tsutomu Ochi

Yuji Suzuki

Hiroshi Inamura

Yukihiro Ohashi

Yoshinori Yamamoto

Kouetsu Hibino

Hiroaki Shishido

Rikiya Yamashita

Takashi Ohta

Isao Inoue

Masakazu Hirose

Akira Kawamata

Hiroyuki Iwashita

Hiroo Yoshikawa

Norio Sato

Masahisa Yamaguchi

Kazuya Otsuji

Mitsumasa Matsushita

Kenta Mikuriya

Tsuyoshi Takahashi

Masayuki Ikeda

Yuichi Yagami

Takashi Komori

Yoshinori Takema

Takumi Taniguchi

Toshiyuki Inagaki

Kikuhiko Okamoto

Katsuhiro Kajio

Yasushi Tsuboi

Yasuki Suzuura

Mikio Wada

Junichi Shirahama

Mitsuru Murata

Tomoko Nakamura

Reiji Nishikawa

Masahiko Asahi

Hiroya Nakaji

Toshiro Sakai

Akira Shigeta

Naohiro Takeshita

Hiroshi Nakamura

Kazuhiro Watanabe

Yuichi Murakami

Nobuyoshi Saito

Takeo Ito

Kazuo Nakamura

Hiroshi Okamura

Tadakatsu Shimada

Hitoshi Oka

Takashi Kamikubo

Manabu Kato

Takeo Tsukada

Yoshiaki Sonobe

Seiji Take

Kazuo Koya

Kazutaka Kimura

Satoshi Ishihara

Hitoshi Hamada

Hisao Tsutsumi

Nobuhito Toyama

Chisato Kato

Masaharu Nakatsuchi

Takayuki Kei

Shigeo Inoue

Kiyoshi Hatanaka

Osahide Miyamoto

Yukitaka Tanaka

Yasuhiro Sakai

Atsushi Omura

Isao Kanada

Hideki Tomiyama

Kenji Masui

Ichiro Tokimitsu

Tsunemasa Nishida

Takeyuki Yamada

Hirohito Anze

Yu Morimoto

Junichi Kawano

Kazuhisa Yano

Fusayoshi Miura

Yoshimitsu Ina

Hideki Machino

Hitoshi Sunaoshi

Toshinobu Miyakoshi

Toshiyuki Kawagishi

Yoshiaki Hida

Porous oxide semiconductor particles have a connected structure in which porous primary particles having an aggregate of crystallites composed of an oxide semiconductor are connected to each other and have a specific surface area of 60 m/g or more. The porous oxide semiconductor particles have preferably a pore diameter of 1 nm or more and 20 nm or less. The porous oxide semiconductor particles have preferably a tap density of 0.005 g/cmor more and 1.0 g/cmor less. The oxide semiconductor is preferably SnOor SnOdoped with at least one element selected from the group consisting of Nb, Sb, W, Ta, and Al.

Porous oxide semiconductor particles

A mask blank for manufacturing a transfer mask. A thin film () includes a material containing a metal, silicon, and nitrogen; a ratio of metal content[atom %] to the total content [atom %] of metal and silicon in the thin film () is 15% or less. When the thin film is subjected to an analysis of a secondary ion mass spectrometry and a distribution of a secondary ion intensity of silicon in depth direction, a ratio of 1.6 or less is obtained of (i) a maximum peak [Counts/sec] of a secondary ion intensity of silicon at a surface layer region, which is opposite from a transparent substrate (), of the thin film (), divided by (ii) an average value [Counts/sec] of a secondary ion intensity of silicon in a depth direction of an inner region, which is a region excluding the surface layer region and a vicinity region with an interface, of the transparent substrate () of the thin film ().

Mask blank

This invention provides a mask blank in which a thin film for transfer pattern formation is provided on a main surface of a transparent substrate. The thin film is made of a material containing a transition metal and silicon and further containing at least one of oxygen and nitrogen. The thin film has as its surface layer an oxide layer with an oxygen content higher than that of a region, other than the surface layer, of the thin film. The thin film is formed so that the thickness of its central portion is greater than that of its outer peripheral portion on the main surface side. The oxide layer is formed so that the thickness of its central portion is greater than that of its outer peripheral portion on the main surface side.

Mask blank, and transfer mask

The present invention is a reflective mask blank used to fabricate a reflective mask, which has a laminated structure of a multilayer reflective film, an absorber film and an etching mask film in this order on a substrate, wherein the etching mask film comprises a material containing chromium, the absorber film comprises a material containing tantalum, a highly oxidized layer is formed on the surface layer of the absorber film on the opposite side from the substrate, and a Ta 4f narrow spectrum of the highly oxidized layer when analyzed by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of more than 23 eV.

Reflective mask blank, reflective mask and method of manufacturing reflective mask

Mask blank, transfer mask, and methods of manufacturing the same

A photomask blank for use in the manufacture of a photomask adapted to be applied with exposure light having a wavelength of 200 nm or less has a thin film on a transparent substrate. The thin film is made of a material containing a transition metal, silicon, and carbon and comprising silicon carbide and/or a transition metal carbide.

Photomask blank, method of manufacturing the same, photomask, and method of manufacturing the same

In a mask blank for manufacturing a transfer mask, the mask blank has a light-shielding film on a transparent substrate. The light-shielding film is made of a material containing tantalum as a main metal component and includes a highly oxidized layer which has an oxygen content of 60 at % or more and which is formed as a surface layer of the light-shielding film. The highly oxidized layer is placed on a side opposite to a transparent substrate side.

Method of manufacturing a transfer mask and method of manufacturing a semiconductor device

The present invention is a mask blank used to fabricate a transfer mask, which has a laminated structure of a light shielding film and an etching mask film in this order on a transparent substrate, wherein the etching mask film comprises a material containing chromium, the light shielding film comprises a material containing tantalum, a highly oxidized layer is formed on the surface layer of the light shielding film on the opposite side from the transparent substrate, and a Ta 4 f narrow spectrum of the highly oxidized layer analyzed by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of more than 23 eV.

Mask blank, transfer mask, method of manufacturing transfer mask and method of manufacturing semiconductor device

There is provided an engine stroke determination apparatus. The engine stroke determination apparatus is for determining stroke of a single-cylinder four-stroke engine and includes a transistor igniter. The apparatus is configured to determine a compression stroke and an exhaust stroke by comparing voltages of ignition signals that are output in the compression stroke and the exhaust stroke by the transistor igniter.

Engine stroke determination apparatus

A search part sends out a connection request signal and receives a connection response signal. A radio strength acquiring part acquires radio strength of an available device that has sent the connection response signal. A connection determining part determines whether or not the radio strength has increased, then becomes greater than or equal to a threshold value and has been constant for a period of time longer than or equal to a predetermined period of time. If it is determined that the radio strength has increased, then becomes greater than or equal to the threshold value and has been constant for a period of time longer than or equal to the predetermined period of time, an inter-device authentication part performs inter-device authentication with the available device.

Wireless communication device and wireless communication method

The present invention aims to relay data by using two kinds of communication systems for continuous and smooth transferring of data in accordance with a connection state. A mobile communication terminalincludes: a mobile communication unitthat connects to a mobile communication network NW to download data therethrough, a short-range communication unitthat transmits the data downloaded to opposing equipment through short-range communication, a communication management unitthat detects a state of connection with the opposing equipment, a data storage unitthat temporarily stores the data downloaded, and a data management unitthat successively hands over the data temporarily stored to the short-range communication unit. In the case that the state of connection indicates an out-of-service-area state, the data storage unitadditionally stores data being downloaded by the mobile communication unit. In the case that the state of connection has changed from the out-of-service-area state to a normal state, the data management unithands over not-yet-transmitted data blocks stored by the data storage unitto the short-range communication unit

Mobile communication terminal and data download method

A communication terminal () including a first communication unit () and a second communication unit () includes a presence status detection unit () that detects a presence status indicating whether a distance from a personal computer () is inside a communication range where communication is possible or outside the communication range where communication is not possible for each of the first communication unit () and the second communication unit (), and a communication status management unit () that, in accordance with the presence status of either communication unit () detected by the presence status detection unit (), causes the other communication unit () to transition to an activation state, a standby state or a disconnection state.

Communication terminal and communication control method

A communication terminal () including a first communication unit () and a second communication unit () with a shorter communication distance than the first communication unit () includes a presence status detection unit () that detects that a distance from a personal computer () has changed from a state possible to communicate to a state not possible to communicate for the second communication unit (), and a communication status control unit () that causes a standby interval in intermittent reception performed by the first communication unit () to become shorter when a change of the second communication unit () from the state possible to communicate to the state not possible to communicate is detected by the presence status detection unit (). This enables more detailed and accurate tracking of the connection status of the first communication unit (), which can advance the timing to bring the first communication unit () to transition to a disconnection state or a standby state, allowing reduction of power consumption in the first communication unit ().

Provided is a mask blank surface treatment method for surface-treating, using a treatment liquid, a surface of a thin film, to be formed into a transfer pattern, of a mask blank having the thin film on a substrate. The thin film is made of a material that can be etched by ion-based dry etching. The concentration of an etching inhibitor contained in the treatment liquid is 0.3 ppb or less.

Surface treatment method for a mask blank, method of manufacturing a mask blank, and method of manufacturing a mask

Growing community of inventors

Tokyo, Japan

Toshiyuki Suzuki