Kabushiki Kaisha Toshiba

Toshiyuki Shimizu

Masayuki Sugiura

Toshiki Seshita

Yoshitomo Sagae

Yoshio Itagaki

Hirotsugu Wakimoto

Masanori Ochi

Noriyasu Kurihara

According to one embodiment, a high-frequency switch includes a high-frequency switch IC chip. The high-frequency switch IC chip has a high-frequency switching circuit section including an input terminal, a plurality of switching elements, a plurality of high-frequency signal lines, and a plurality of output terminals. The input terminal is connected to each of the plurality of output terminals via each of the plurality of switching elements with the high-frequency signal lines having the same lengths. The plurality of output terminals are arranged on a surface at an outer periphery of the high-frequency switch IC chip. The input terminal is arranged on the surface of the high-frequency switch IC chip at the center of the high-frequency switch IC circuit section.

High-frequency switch

According to one embodiment, a capacitor includes a substrate, a first electrode, a second electrode, and a first dielectric portion. The substrate includes an insulating layer and a semiconductor layer provided on the insulating layer. The semiconductor layer includes a dummy active region electrically isolated from an active region including an active element. The first electrode and the second electrode are located to oppose each other above the dummy active region. The first dielectric portion is provided between the first electrode and the second electrode.

Capacitor, integrated device, radio frequency switching device, and electronic apparatus

Growing community of inventors

Kanagawa-ken, Japan

Toshiyuki Shimizu