Shimadzu Corporation

Other

Shindengen Electric Manufacturing Company Limited

Institute of National Colleges of Technology, Japan

Shindengen Sensor Device Co., Ltd.

Toshiyuki Sato

Toshinori Yoshimuta

Satoshi Tokuda

Kenji Sato

Koichi Tanabe

Takahiro Doki

Hiroyuki Kishihara

Yoshihiro Izumi

Satoshi Sano

Akira Horiba

Osamu Teranuma

Shingo Furui

Masatomo Kaino

Akina Yoshimatsu

Taro Shirai

Kenji Kimura

Shoji Kuwabara

Junichi Suzuki

Akihiro Nishimura

Tokihiko Shinomiya

Shinya Hirasawa

Hidetoshi Kishimoto

Yoichiro Shimura

Kazuhiko Shima

Nobuya Nagafune

Naoyuki Hori

Takayuki Nakayama

In an X-ray imaging device according to a first embodiment, an X-ray detector has a configuration in which scintillator elements are defined by light-shielding walls in a lattice shape. Among X-rays incident on the X-ray detector, X-rays incident on the light-shielding walls are not converted into scintillator light and are transmitted by the X-ray detector. Accordingly, by causing X-rays to be incident on the X-ray detector in which the scintillator elements are defined by the light-shielding walls in a lattice shape, an area in which X-raystransmitted by a subject M are incident on the X-ray detector can be limited to an arbitrary range. Accordingly, since a detection mask can be omitted in the X-ray imaging device which is used for EI-XPCi, it is possible to reduce a manufacturing cost of the X-ray imaging device.

X-ray imaging device

Provided is a radiation phase difference imaging apparatus in which a separation distance between a phase grating and a radiation detector is optimized. The separation distance between the phase grating and a detection surface of an FPD is determined based on the magnitude of noise corruption in a self-image projected onto the detection surface. The magnitude of the effect of the noise is used as a basis for assessing the separation distance. It is determined whether a distance Zd is appropriate for imaging, based on the magnitude of noise corruption in the self-image in a self-image picture which is obtained when the distance Zd is the distance between the phase grating and the detection surface of the FPD. The separation distance can thus be optimized based on actual conditions of an actual X-ray source that emits a plurality of types of X-rays.

Radiation phase-contrast imaging device

A X-ray detector having enhanced X-ray sensitivity, which enables dual energy imaging having high diagnostic performance. This X-ray detector includes: scintillator elements which are partitioned by light blocking walls and which convert low-energy X-rays to light; and scintillator elements which are partitioned by light blocking walls and which convert high-energy X-rays to light. When seen from the direction of incidence of the X-rays, the positional pattern of the light blocking walls and that of the light blocking walls are configured so as not to be in alignment with each other. Accordingly, the X-rays incident on the X-ray detector are converted to light by at least either one of the scintillator elements and are finally outputted as X-ray detection signals.

X-ray detector

A graphite substrate is processed to have surface unevenness in a range of 1 &#x3bc;m to 8 &#x3bc;m. Thereby, a semiconductor film to be laminated on the graphite substrate has a stable film quality, and thus adhesion of the graphite substrate and the semiconductor layer can be enhanced. When an electron blocking layer is interposed between the graphite substrate and the semiconductor layer, the electron blocking layer is thin and thus the surface unevenness of the graphite substrate is transferred onto the electron blocking layer. Consequently, the electron blocking layer also has surface unevenness approximately in such range. Thus, almost the same effect as a configuration in which the semiconductor layer is directly connected to the graphite substrate can be produced.

Radiation detector and method of manufacturing the same

A method of manufacturing a radiation detector, comprising: a charge blocking layer generating step of generating a charge blocking layer on a substrate; a CdTe-layer generating step of generating a CdTe layer so as to cover the charge blocking layer on the substrate, the CdTe layer undergoing heterojunction to the charge blocking layer and being composed of a chlorine-doped polycrystalline film; and a heat treatment step of performing a heat treatment on the substrate having the CdTe layer formed thereon.

Method of manufacturing radiation detector

Although Cl (chlorine) is no longer supplied in the course of a first process in which a detecting layer formed by a polycrystalline film or a polycrystalline lamination film by vapor deposition or sublimation is formed, an additional source (e.g., HCl of Cl-containing gas) other than a source is supplied at the start or in the course of the first process. Thus, the detecting layer as the polycrystalline film or the polycrystalline lamination film of CdTe, ZnTe, or CdZnTe can be doped with Cl uniformly in a thickness direction from the start until the end of the first process in film formation. As a result, uniform crystal particles and uniform detection characteristics can be achieved.

Because a restricting plateis disposed using a spacer, an upper plateis allowed to expand upward when resin is injected, but unnecessary overexpansion is restricted by the restricting plate. Therefore the injection of a slightly larger amount of resindoes not cause a distortion or breakage of the upper plateand a large amount resinthan the predetermined amount may be injected. As a result, damage to the upper plateby the injection of the resinand damage to the upper plate, the exfoliation of the radiation sensitive layer, and the like caused by the curing of the resinmay be prevented and damage to the flat panel radiation detectormay be prevented thereby.

Process for producing a flat panel radiation detector and a flat panel radiation detector

An X-ray detector for detecting X rays includes a semiconductor for generating electric charges therein upon X-ray incidence, and electrodes formed on opposite sides of the semiconductor for application of a predetermined bias voltage. The semiconductor is amorphous selenium (a-Se) doped with a predetermined quantity of an alkali metal.

In a method of producing a radiation detector, an active matrix board is formed to include gate lines and data lines arranged in a two-dimensional lattice shape, a plurality of high-speed switching elements provided to respective lattice points and connected to the gate lines and the data lines, picture element electrodes connected to source electrodes of the high-speed switching elements, and charge storage capacitances disposed between the picture element electrodes and ground on a insulating base plate. Then, a converting layer is formed at upper portions of the respective picture element electrodes at a temperature between 300&#xb0; C. and 800&#xb0; C. to generate a pair of electron-hole by absorbing light or radiation. The active matrix board is formed of a poly-silicon process board.

Method of producing a radiation detector with a polysilicon converting layer

A radiation detector for detecting a spatial distribution of incident radiation includes a radiation-sensitive semiconductor, a common electrode formed on one surface of the semiconductor for receiving a bias voltage, a plurality of split electrodes formed on the other surface of the semiconductor for outputting, as electric signals, charges generated within the semiconductor by the incident radiation, and a light irradiating mechanism for emitting light at least during a detection of the radiation.

Radiation detector

Split-electrode radiation detector free of sensibility variations and after-outputs

In a radiation detector, a polycrystalline film is formed by a closed spaced sublimation using a sintered material of at least one of a CdTe and CdZnTe powder. The CdTe or CdZnTe film has a thickness sufficient to catch radiation and a large area corresponding to a size of a supporting base plate, which can be obtained in a short time. Thus, a radiation detector and a radiation image taking device having a large area can be obtained.

Radiation detector and radiation image taking device

A two-dimensional array type detecting device of the invention is formed of a detecting side substrate, and a readout side substrate laminated together. In the detecting side substrate, a high resistivity responsive semiconductor film is laminated on a substrate through a common electrode therebetween, and semiconductor films for connection are formed for the respective sections corresponding to a two-dimensional array arrangement. Therefore, leak and expansion of carriers produced in the high resistivity responsive semiconductor are prevented in a direct conversion system, wherein light or radiation enters from a side of the glass substrate, in which the common electrode is not formed. Thus, a detecting sensitivity and space resolution can be improved. Namely, a dynamic range is large, and a crosstalk is small.

Two-dimensional array type detecting device having a common and individual electrodes

In a method of the present invention for fabricating a two-dimensional image detector in which a light/radiations detection element is applied, an upper electrode, a first charge blocking layer, and a semiconductor layer having photoconductivity are provided on support substrate in the stated order, and thereafter, a surface of the semiconductor layer is sprayed with ceramic particles by means of an abrasive grain jet nozzle. The abrasive grain jet nozzle repeatedly makes a high-speed reciprocating motion in an X direction at constant cycles while jetting the ceramic particles to the entirety of the surface of the semiconductor layer of the counter substrate moving in a Y direction, so that the surface of the semiconductor layer is subjected to a flattening treatment. This enables to provide a two-dimensional image detector in which a light/radiations detection element that provides effective improvement of a charge blocking effect and suppression of deterioration of reliability is applied.

Method for fabricating detection element and method for fabricating two-dimensional image detector using detection element

An active matrix substrate provided with a matrix of electrode wires, a plurality of thin film transistors (TFTs) individually formed at intersections of the matrix, and pixel electrodes connected to the electrode wires through the thin film transistors (TFTs) is laminated to a counter substrate provided with connecting electrodes by means of an anisotropic conductive bonding agent. The counter substrate is composed of 12 divided pieces which are tiled as panes.

Growing community of inventors

Kyoto, Japan

Toshiyuki Sato