Tokyo University of Agriculture and Technology

Citizen Watch Company, Ltd.

Nissin Ion Equipment Co., Ltd.

Toshiyuki Sameshima

Masafumi Ide

Yutaka Inouchi

Takeshi Matsumoto

Yuko Fujimoto

A photoinduced carrier lifetime measurement device includes light sources that respectively apply light that differs in wavelength and generates photoinduced carriers to a semiconductor substrate, a microwave generation section that generates microwaves that are applied to the semiconductor substrate, a detection section that detects the intensity of the microwaves that have passed through the semiconductor substrate, and a calculation section that calculates the effective carrier lifetime corresponding to the wavelength of each light based on the intensity of the microwaves detected when applying each light, and calculates the bulk carrier lifetime and a surface recombination velocity of the semiconductor substrate based on the effective carrier lifetime calculated corresponding to the wavelength of each light.

Photoinduced carrier lifetime measurement device and photoinduced carrier lifetime measurement method

An electricity storing solar power generation deviceincludes: solar cells including at least two kinds of solar cellsandhaving mutually different spectral absorption sensitivities; and electricity storing devicesandelectrically connected to the solar cells. The solar cells are configured such that an n(n being an integer of 1 or greater) solar cell spontaneously disperses light by itself by transmitting or reflecting light so as to allow a portion of light incident on the nsolar cell other than a portion of light absorbed by the nsolar cell to fall on an n+1solar cell having a smaller band gap. Each of the solar cells is electrically connected to one of the electricity storing devices, and electric power generated by the solar cells is stored in the electricity storing devices electrically connected to the two or more solar cells.

Storage type solar power generation device and storage type solar power generation system

A photoinduced carrier lifetime measuring method capable of obtaining photoinduced carrier effective lifetime of a semiconductor substrate with high accuracy regardless of the surface state of the sample. The method includes: irradiating a microwave onto a semiconductor substrate while periodically pulse-irradiating a light onto the semiconductor substrate; detecting the microwave transmitted through the semiconductor substrate or reflected by the semiconductor substrate; and obtaining the effective lifetime of photoinduced carriers generated in the semiconductor substrate by the pulse irradiation of the light, based on an irradiation duration Tand a non-irradiation duration Twhen performing the light pulse irradiation and an integrated value of each microwave intensity obtained by the detection.

Photoinduced carrier lifetime measuring method, light incidence efficiency measuring method, photoinduced carrier lifetime measuring device, and light incidence efficiency measuring device

A manufacturing method of a thin film semiconductor substrate includes implanting ions at a specified depth into a semiconductor substrate, forming a bubble layer in the semiconductor substrate by vaporizing the ions through heating, bonding an insulating substrate onto the semiconductor substrate, and cleaving the semiconductor substrate along the bubble layer to form a semiconductor thin film on a side of the insulating substrate. At the forming, the semiconductor substrate is heated at a temperature in a temperature range of approximately 1000&#xb0; C. to 1200&#xb0; C. for a duration in a range of approximately 10 &#x3bc;s to 100 ms. The heating of the semiconductor substrate is performed by using, for example, a light beam.

Manufacturing method of thin film semiconductor substrate

Supports ( ) are formed to be arrayed on a support base ( ), a sacrifice layer ( ) is formed of a resin material, and the sacrifice layer ( ) is planarized so as to expose the top of the respective supports ( ), thereby forming a thin-film substrate ( ) on top of the sacrifice layer ( ) as planarized, and the supports ( ). The sacrifice layer ( ) is removed by plasma selective etching thereof through the intermediary of the thin-film substrate, and thereby a large-area thin-film substrate ( ) floatingly spaced by a space ( ) away from the support base ( ) can be fabricated.

Method for fabricating thin-film substrate and thin-film substrate fabricated by the method

The invention provides a process of forming a semiconductor device, including the steps of: forming a separation member, used to form a separation layer, on a flat surface of a support substrate; forming support sections on the flat surface by removing portions of the separation member; forming, above the support sections, a film structure having a single layer or a plurality of layers; and separating the film structure from the Support substrate by removing the separation layer. The invention also provides a process of transferring a film structure having a single layer or a plurality of layers, including the steps of: forming a separation member used to form a separation layer on a flat surface of a first substrate; forming support sections on the flat surface by removing part of the separation member; forming, on the support sections, a film structure having a single layer or a plurality of layers; adhering a second substrate to the film structure; and separating the first substrate from the film structure by removing the separation layer.

Growing community of inventors

Fuchu, Japan

Toshiyuki Sameshima