Hitachi, Ltd.

Toshiyuki Onogi

Tomihiro Hashizume

Masahiko Ichimura

Satoshi Watanabe

Yasuo Wada

Yoshimasa A Ono

Yuji Suwa

Magnetoresistive devices with increased response sensitivity to external magnetic fields and an increased magnetoresistive ratio (MR ratio) to cope with rapid advances made in a highdensity magnetic recording device. A patterned dielectric layer is laminated in a flat shape on a substrate capable of being doped with carriers (holes) in an electric field, and an FET structure with gate electrodes is then fabricated on that dielectric layer, and the substrate spatially modulated by applying a nonuniform electrical field to induce a first ferromagnetic domain, a nonmiagnetic domain and a second ferromagnetic domain.

Electric-field-effect magnetoresistive devices and electronic devices using the magnetoresistive devices

A ferromagnetic material can be formed in a very small size on the order of an atomic size and is capable of being stably magnetized. The ferromagnetic material comprises basic unit structures each consisting of a first atom ( ), a second atom ( ) of the same kind as the first atom ( ), and a third atom (or atomic group) ( ) of the same kind as the first atom ( ) or of a kind different from that of the first atom ( ). In each of the basic unit structures, the atoms are arranged on a surface of a substrate so that a chemical bond ( ) is formed between the first atom or molecule and the third atom or molecule, a chemical bond ( ) is formed between the second atom or molecule and the third atom or molecule, and a chemical bond or an electron path ( ) not passing the third atom is formed between the first and the second atom or molecule, wherein said third atoms or molecules consist of As atoms.

Ferromagnetic material and magnetic apparatus employing the ferromagnetic material

A ferromagnetic material can be formed in a very small size on the order of an atomic size and is capable of being stably magnetized. The ferromagnetic material comprises basic unit structures each consisting of a first atom (,), a second atom (,) of the same kind as the first atom (,), and a third atom (or atomic group) (,) of the same kind as the first atom (,) or of a kind different from that of the first atom (,). In each of the basic unit structures, the atoms are arranged on a surface of a substrate so that a chemical bond (,) is formed between the first atom or molecule and the third atom or molecule, a chemical bond (,) is formed between the second atom or molecule and the third atom or molecule, and a chemical bond or an electron path (,) not passing the third atom is formed between the first and the second atom or molecule, wherein said third atoms or molecules consist of As atoms.

A ferromagnetic fine line has no loss of spontaneous magnetization even when fabricated ultra-small. The magnetization can be controlled by the proximity of the electrodes and the atomic level structure, and is protected from adsorption of impurities by embedding the ferromagnetic fine line in a nonmagnetic atomic layer.

Ferromagnetic fine line and magnetic apparatus thereof

A ferromagnetic material can be formed in a very small size on the order of an atomic size and is capable of being stably magnetized. The ferromagnetic material comprises basic unit structures each consisting of a first atom (11), a second atom (12) of the same kind as the first atom (11), and a third atom (or atomic group) (13) of the same kind as the first atom (11) or of a kind different from that of the first atom (11). In each of the basic unit structures, the atoms are arranged on a surface of a substrate so that a chemical bond (14) is formed between the first atom or and the third atom or molecule, a chemical bond (14) is formed between the second atom and the third atom or molecule, a chemical bond or an electron path (15) not passing the third atom is formed between the first and the second atom.

Growing community of inventors

Higashimatsuyama, Japan

Toshiyuki Onogi