Canon Kabushiki Kaisha

Mitsui Chemicals, Inc.

Toshiyuki Ogawa

Takashi Ushijima

Kazuhiko Kato

Yoshitaka Zaitsu

Kaoru Noguchi

Atsushi Kandori

Futoshi Hirose

Hajime Ikeda

Sho Suzuki

Hideaki Ishino

Tsutomu Tange

Toshihiro Shoyama

Hiroshi Takakusagi

Takehito Okabe

Yasuo Yamazaki

Yukinobu Suzuki

Akihiro Kawano

Mitsuhiro Yomori

Nobuhiko Sato

Masaaki Sasaki

Yusuke Onuki

Takahisa Kato

Kazutoshi Torashima

Nobutaka Ukigaya

Takahiro Akiyama

Makoto Takagi

Masaki Kurihara

Yoichi Wada

Koji Hara

Shunsuke Takimoto

Tasuku Kaneda

Mitsunaga Dohzaki

Nabuhiko Sato

A photoelectric conversion device in which first and second substrates are bonded to each other is provided. The first substrate includes a first semiconductor layer having light receiving elements. The second substrate includes a second semiconductor layer having a circuit element for processing a signal generated by the light receiving elements. The photoelectric conversion device includes an electrode pad for external connection, an opening extending to the electrode pad, and a conductive pattern located between the first and second semiconductor layers. The conductive pattern includes wiring members that are used to drive the photoelectric conversion device and dummy members that are not used to drive the photoelectric conversion device. The dummy members include a dummy member located on an outer side relative to the opening in a plan view relative to a boundary between the first and second substrates.

Photoelectric conversion device, method for producing the same, and appliance

A technique advantageous for improving an optical property of a photoelectric conversion apparatus is provided. The photoelectric conversion apparatus includes a photoelectric conversion layer and a light-shielding film that covers the photoelectric conversion layer, wherein the light-shielding film includes one metallic layer and another metallic layer located between the one metallic layer and the photoelectric conversion layer.

Photoelectric conversion apparatus and equipment

A photoelectric conversion device has an isolation structure. First and second isolation portions are provided between first and second photoelectric conversion elements. The first isolation portion extends from a first plane of a semiconductor layer to a position corresponding to at least a quarter of a length from the first plane to a second plane of the semiconductor layer. The second isolation portion extends from the second plane of the semiconductor layer to a position corresponding to at least a quarter of the length from the first plane to the second plane.

Photoelectric conversion device having isolation portions, and imaging system and moving body having photoelectric conversion device

A photoelectric conversion apparatus includes a semiconductor layer including a photoelectric conversion portion, a charge holding portion configured to hold electric charge generated from the photoelectric conversion portion, and a charge detection portion to which the electric charge held by the charge holding portion is transferred. A gate electrode of a transistor and a light shielding film including a first portion covering the charge holding portion and a second portion covering an upper surface of the gate electrode are disposed above the semiconductor layer. The distance between the second portion of the light shielding film and the upper surface of the gate electrode is greater than the distance between the first portion of the light shielding film and the semiconductor layer.

Photoelectric conversion apparatus includes semiconductor layer in which first photoelectric converters are arranged in light-receiving region and second photoelectric converters are arranged in light-shielded region, light-shielding wall arranged above the semiconductor layer and defining apertures respectively corresponding to the first photoelectric converters, and light-shielding film arranged above the semiconductor layer. The light-shielding film includes first portion extending along principal surface of the semiconductor layer to cover the second photoelectric converters. The first portion has lower surface and upper surface. The light-shielding wall includes second portion whose distance from the semiconductor layer is larger than distance between the upper surface and the principal surface. Thickness of the first portion in direction perpendicular to the principal surface is larger than thickness of the second portion in direction parallel to the principal surface.

Photoelectric conversion apparatus and equipment including the same

A method of manufacturing an imaging apparatus includes: preparing a substrate comprising a wafer and a silicon layer arranged on the wafer, the wafer including a first semiconductor region made of single crystal silicon with an oxygen concentration not less than 2&#xd7;10atoms/cmand not greater than 4&#xd7;10atoms/cm, the silicon layer including a second semiconductor region made of single crystal silicon with an oxygen concentration lower than the oxygen concentration in the first semiconductor region; annealing the substrate in an atmosphere containing oxygen and setting the oxygen concentration in the second semiconductor region within the range not less than 2&#xd7;10atoms/cmand not greater than 4&#xd7;10atoms/cm; and forming a photoelectric conversion element in the second semiconductor region after the annealing.

Imaging apparatus, method of manufacturing the same, and camera

A semiconductor apparatus includes included first and second semiconductor components which are stacked on each other. The first component includes a first insulating layer and a first plurality of metal pads. The second component includes a second insulating layer and a second plurality of metal pads. Each of the first plurality of metal pads and each of the second plurality of metal pads are bonded to each other to form each of a plurality of bonding portions. First and second openings along an edge of the apparatus and passing through a bonding face between the first and second insulating layer are formed in the apparatus. A first bonding portion between the first opening and the second opening of the plurality of bonding portions is arranged in a distinctive location.

Semiconductor apparatus and equipment

A photoelectric conversion apparatus includes a semiconductor layer having a front surface and a back surface and in which a plurality of photoelectric conversion portions is provided between the front surface and the back surface, a wiring structure arranged on the front surface side of the semiconductor layer, a separation portion arranged between the plurality of photoelectric conversion portions and formed by a trench continuing from the back surface, a first light shielding portion arranged above the semiconductor layer on the back surface side so as to overlap the separation portion, and a second light shielding portion arranged above the semiconductor layer on the back surface side so as to face the first light shielding portion via a region located above at least one photoelectric conversion portion among the plurality of photoelectric conversion portions.

Photoelectric conversion apparatus having light shielding portions above semiconductor layer on back surface side and equipment

Provided is a photoelectric conversion apparatus including: an interlayer insulating film that covers a semiconductor layer and has a contact hole positioned above a gate electrode; a contact plug that is disposed in the contact hole and connected to the gate electrode; a light-shielding film that is positioned between the interlayer insulating film and the semiconductor layer and includes a first part covering a charge holding portion and a second part covering an upper surface of the gate electrode; and a dielectric layer that is positioned between the second part and the gate electrode, in which a relative dielectric constant of the dielectric layer is lower than a relative dielectric constant of the interlayer insulating film.

A photoelectric conversion device has a silicon substrate which includes a first portion configured to perform photoelectric conversion, and a second portion which is arranged farther apart from a light receiving surface of the silicon substrate than the first portion and contains carbon. A first peak concentration as a carbon peak concentration in the second portion is not less than 1&#xd7;10[atoms/cm] and not more than 1&#xd7;10[atoms/cm], and a second peak concentration as an oxygen peak concentration in the second portion is not less than 1/1000 and not more than 1/10 of the first peak concentration.

Photoelectric conversion device, method of manufacturing the same, and camera

A method of manufacturing a photoelectric conversion apparatus includes forming a first semiconductor region of a first conductivity type in a trench provided in a semiconductor substrate, forming an insulating member on the semiconductor substrate, and forming a second semiconductor region of a second conductivity type that forms a photoelectric conversion portion. The first semiconductor region is present between the second semiconductor region and the insulating member in a direction perpendicular to a depth direction of the semiconductor substrate.

Photoelectric conversion apparatus and method of manufacturing the same

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Abiko, Japan

Toshiyuki Ogawa