Stanley Electric Co., Ltd

Tokuyama Corporation

Toshiyuki Obata

Toru Kinoshita

Hiroshi Furuya

Yasuhiro Hashimoto

Toru Nagashima

Tomoaki Satou

Yu Mishima

A semiconductor light-emitting element according to the present invention includes an n-type semiconductor layer, an active layer, a p-type semiconductor layer, and a p-electrode. The n-type semiconductor layer has a composition of AlGaN or AlInGaN. The active layer is formed on the n-type semiconductor layer. The active layer contains an AlGaN semiconductor or an AlInGaN semiconductor. The p-type semiconductor layer is formed on the active layer. The p-type semiconductor layer has a composition of AlN, AlGaN, or AlInGaN. The p-electrode is formed on the p-type semiconductor layer. The p-type semiconductor layer includes a contact layer formed on the p-electrode. The contact layer includes an AlGaN layer or an AlInGaN layer in which a band gap decreases toward an interface with the p-electrode. The contact layer includes a tunneling contact layer in contact with the p-electrode. The tunneling contact layer is connected to the p-electrode by a tunnel junction.

Semiconductor light-emitting element

A group III nitride semiconductor light-emitting element includes a single crystal substrate and an element layer. The element layer includes an n-type layer, an active layer, and a p-type layer formed on the upper surface of the single crystal substrate in this order, and has a composition represented by the composition formula AlGaInN (0&#x2264;X&#x2264;1.0, 0&#x2264;Y&#x2264;1.0, 0&#x2264;X+Y&#x2264;1.0). The thickness of the single crystal substrate is at least 80 &#x3bc;m. The area of the upper surface of the substrate is larger than the area of the bottom surface of the substrate.

Group III nitride light-emitting element and method for producing the light-emitting element

A group-Ill nitride stacked body includes a substrate, an n-type first AlGaN layer expressed by the composition formula AlGaN (0&#x3c;X&#x2264;1), and a second AlGaN layer which is disposed between the substrate and the n-type first AlGaN layer and which is expressed by the composition formula AlGaN (0.5&#x3c;Y&#x2264;1, where Y&#x3c;X). A group-III nitride light-emitting element comprises an active layer which is disposed on the n-type first AlGaN layer of the group-Ill nitride stacked body and which includes at least one well layer. The well layer of the active layer is an AlGaN layer expressed by the composition formula AlGaN (0&#x3c;W&#x3c;1), where the Al composition W is such that W&#x2264;Y.

Group-III nitride stacked body and group-III nitride light-emitting element

A semiconductor wafer has, on one surface of a sapphire substrate, an element layer including an n-type layer, an active layer, and a p-type layer, and is characterized in that the surface of the element layer is bent in a convex way, and the curvature thereof is 530-800 km.

Semiconductor wafer

Provided is a group III nitride stacked body having an n-type AlGaN (0.5&#x2264;X&#x3c;1) layer formed on an AlN single crystal substrate while being lattice-matched to the AlN single crystal substrate wherein the n-type AlGaN (0.5&#x2264;X&#x3c;1) layer has at least a stacked structure in which a first n-type AlGaN (0.5&#x2264;X1&#x3c;1) layer, a second n-type AlGaN (0.5&#x2264;X2&#x3c;1) layer, and a third n-type AlGaN (0.5&#x2264;X3&#x3c;1) layer are stacked in this order from the AlN single crystal substrate side, and X1, X2, and X3 indicating the Al compositions of the respective layers satisfy 0&#x3c;|X1&#x2212;X2|&#x2264;0.1, and satisfy 0&#x3c;|X2&#x2212;X3|&#x2264;0.1.

Group III nitride stacked body, and semiconductor device having the stacked body

A group III nitride semiconductor element includes an active layer between an n-type layer and a p-type layer and has a mesa structure containing the p-type layer, and includes an n electrode on the n-type layer and a p electrode on the p-type layer. The p electrode is obtained by sequentially laminating a first metal layer, a conductive layer and a second metal layer in this order. The resistivity of the conductive layer is higher than the resistivity of the first metal layer.

Nitride semiconductor light emitting element

A group III nitride semiconductor light emitting element includes an active layer between an n-type layer and a p-type layer, having an n-electrode on the n-type layer and a p-electrode on the p-type layer, and having a mesa structure containing the p-type layer. In a top view of the group III nitride semiconductor light emitting element, the distance between a portion of an end part of the mesa structure and the periphery of the p-electrode is &#x2153; or more of a diffusion length L.

Group III nitride semiconductor luminescence element

A group III nitride laminate includes, on an AlN single crystal substrate, a multilayer structure having an AlGaN layer (0&#x3c;X&#x2264;1) that is lattice-matched to the AlN single crystal substrate, and wherein a GaN layer that has a film thickness of 5-400 nm and a dislocation density of less than 5&#xd7;10cmor a half width of the X-ray omega rocking curve of 50-300 seconds is laminated on the AlGaN layer (0&#x3c;X&#x2264;1).

Group III nitride laminate, luminescence element comprising said laminate, and method of producing group III nitride laminate

Provided is a method for pretreatment of a group III nitride single crystal substrate having a high Al composition ratio, for manufacturing a high-quality group III nitride thin film. The method includes heating the base substrate at a temperature range of 1000 to 1250&#xb0; C. for no less than 5 minutes under a first mixed gas atmosphere before a layer of a second group III nitride single crystal is grown, wherein the first mixed gas includes hydrogen gas and nitrogen gas; the base substrate includes a layer of a first group III nitride single crystal at least on a surface of the base substrate; the first group III nitride single crystal is represented by a composition formula of AlGaInN; and the layer of the second group III nitride single crystal is to be grown on the layer of the first group III nitride single crystal.

Method for pretreatment of base substrate and method for manufacturing layered body using pretreated base substrate

A vertical nitride semiconductor device includes an n-type aluminum nitride single-crystal substrate having an Si content of 3&#xd7;10to 1&#xd7;10cmand a dislocation density of 10cmor less. An ohmic electrode layer is formed on an N-polarity side of the n-type aluminum nitride single-crystal substrate.

Growing community of inventors

Yamaguchi, Japan

Toshiyuki Obata