Mitsubishi Materials Corporation

Mitsubishi Metal Corporation

The University of Tokyo

Toshiyuki Nagase

Yoshiyuki Nagatomo

Yoshirou Kuromitsu

Takeshi Negishi

Yoshio Kanda

Kazuaki Kubo

Shoichi Shimamura

Nobuyuki Terasaki

Hideaki Yoshida

Takeshi Kitahara

Masahito Komasaki

Hiroya Ishizuka

Masafumi Hatsushika

Touyou Ohashi

Tadaharu Tanaka

Yoshinobu Nakada

Kazuhiro Akiyama

Hiroto Uchida

Naoya Shibata

Masakazu Edo

Hideyuki Miyake

Shuji Nishimoto

Akihito Kumamoto

Masato Otsuki

Kunio Sugamura

Yuichi Ikuhara

Hirokazu Tanaka

Kenji Morinaga

Asao Tokiwa

Koichi Goshi

Ryo Muranaka

Yoshiro Kuromitu

The present invention provides a ceramic-aluminum bonded body in which Mg-containing oxide having a spinel crystal structure are dispersed in an aluminum member within a range of 2 &#x3bc;m in a thickness direction from a bonded interface with a ceramic member, a segregated portion in which Mg, Si, and O is segregated is formed in the aluminum member in the vicinity of the bonded interface with the ceramic member, mass ratios of Mg, Si, and O between the segregated portion and a position spaced by 10 &#x3bc;m from the bonded interface toward an aluminum member side are within predetermined ranges, and the amount of Mg at the position spaced by 10 &#x3bc;m from the bonded interface toward the aluminum member side is 0.8 mass % or less.

Ceramic-aluminum conjugate, power module substrate, and power module

A thermoelectric conversion module in which a plurality of P-type thermoelectric conversion elements and N-type thermoelectric conversion elements, which are combined in pairs, are connected in series between a pair of opposing wiring substrates via the wiring substrates: electrode parts to which the thermoelectric conversion elements are connected, are formed on surfaces of ceramic substrates of the wiring substrates: among the thermoelectric conversion elements, the thermoelectric conversion element having a larger thermal expansion coefficient has the length, in a direction in which the wiring substrates face each other, that is smaller than the length, in a direction in which the wiring substrates face each other, of the thermoelectric conversion element having a smaller thermal expansion coefficient: an electrically conductive spacer is interposed between at least one of the two ends of the thermoelectric conversion element having a larger thermal expansion coefficient and the ceramic substrate of the wiring substrate.

Thermoelectric conversion module and thermoelectric conversion device

The resistor includes a chip resistive element which includes a resistive element and metal electrodes and which is formed on first surface of a ceramic substrate, metal terminals electrically joined to the metal electrodes, and an Al member formed on the second surface side of the ceramic substrate, wherein the ceramic substrate and the Al member are joined using an Al&#x2014;Si-based brazing filler metal, the metal electrodes and the metal terminals are joined to each other using a solder, and a degree of bending of an opposite surface of the Al member opposite to a surface on the ceramic substrate side is in a range of &#x2212;30 &#x3bc;m/50 mm to 700 &#x3bc;m/50 mm.

Resistor and method for manufacturing resistor

In this resistor, a heat sink (Al member) () and the other surface () of a ceramic substrate () are joined together using an Al&#x2014;Si-based brazing filler material. The Al&#x2014;Si-based brazing filler material has a melting point in a range of approximately 600&#xb0; C. to 700&#xb0; C. When the heat sink () and the ceramic substrate () are joined together using the Al&#x2014;Si-based brazing filler material, it is possible to prevent the derogation of the heat resistance and thermal deterioration during joining at the same time.

To provide a power-module substrate and a manufacturing method thereof in which small voids are reduced at a bonded part and separation can be prevented. Bonding a metal plate of aluminum or aluminum alloy to at least one surface of a ceramic substrate by brazing, when a cross section of the metal plate is observed by a scanning electron microscope in a field of 3000 magnifications in a depth extent of 5 &#x3bc;m from a bonded interface between the metal plate and the ceramic substrate in a width area of 200 &#x3bc;m from a side edge of the metal plate, residual-continuous oxide existing continuously by 2 &#x3bc;m or more along the bonded interface has total length of 70% or less with respect to a length of the field.

Power-module substrate and manufacturing method thereof

The power module substrate includes a circuit layer that is formed on a first surface of a ceramic substrate, and a metal layer that is formed on a second surface of the ceramic substrate, in which the metal layer has a first aluminum layer that is bonded to the second surface of the ceramic substrate and a first copper layer that is bonded to the first aluminum layer by solid-phase diffusion bonding.

Power module substrate, heat-sink-attached power module substrate, and heat-sink-attached power module

A power module has a copper layer composed of copper or a copper alloy on a surface of a circuit layer to which a semiconductor device is bonded, and a solder layer that is formed by using a solder material is formed between the circuit layer and the semiconductor device. An average crystal grain size which is measured by EBSD measurement in a region having a thickness of up to 30 &#x3bc;m from the surface of the circuit layer in the solder layer is 10 &#x3bc;m or less, the solder layer has a composition that contains Sn as a main component, 0.01 to 1.0% by mass of Ni, and 0.1 to 5.0% by mass of Cu, and a thermal resistance increase rate when a power cycle is loaded 100,000 times is less than 10% in a power cycle test.

Power module

In a power module according to the present invention, a copper layer composed of copper or a copper alloy is provided at a surface of a circuit layer onto which a semiconductor element is bonded, and a solder layer formed by using a solder material is formed between the circuit layer and the semiconductor element. An alloy layer containing Sn as a main component, 0.5% by mass or more and 10% by mass or less of Ni, and 30% by mass or more and 40% by mass or less of Cu is formed at the interface between the solder layer and the circuit layer, the thickness of the alloy layer is set to be within a range of 2 &#x3bc;m or more and 20 &#x3bc;m or less, and a thermal resistance increase rate is less than 10% after loading a power cycles 100,000 times under a condition where an energization time is 5 seconds and a temperature difference is 80&#xb0; C. in a power cycle test.

A semiconductor device comprises a circuit layer composed of a conductive material, and a semiconductor element mounted on the circuit layer, wherein an underlayer having a porosity in the range of 5 to 55% is formed on one surface of the circuit layer, a bonding layer composed of a sintered body of a bonding material including an organic substance and at least one of metal particles and metal oxide particles is formed on the underlayer, and the circuit layer and the semiconductor element are bonded together via the underlayer and the bonding layer.

Semiconductor device and ceramic circuit substrate, and producing method of semiconductor device

This power module substrate with a heat sink includes a power module substrate having a circuit layer disposed on one surface of an insulating layer, and a heat sink bonded to the other surface of this power module substrate, wherein the bonding surface of the heat sink and the bonding surface of the power module substrate are each composed of aluminum or an aluminum alloy, a bonding layer () having a Mg-containing compound () (excluding MgO) which contains Mg dispersed in an Al&#x2014;Si eutectic composition is formed at the bonding interface between the heat sink and the power module substrate, and the thickness t of this bonding layer () is within a range from 5 &#x3bc;m to 80 &#x3bc;m.

Power module substrate with heat sink, and method for producing power module substrate with heat sink

A process for providing a power module substrate. A brazing sheet is temporarily fixed on a surface of a ceramic substrate by surface tension of a volatile organic medium, and a conductive pattern member punched from a base material is temporarily fixed on a surface of the brazing sheet by surface tension. These are heated so as to volatilize the volatile organic medium, and a pressure is applied to the conductive pattern member in its thickness direction. The brazing sheet is then melted to join the conductive pattern member with the surface of the ceramics substrate.

Insulation substrate, power module substrate, manufacturing method thereof, and power module using the same

A base plate for a power module includes: a metal plate, a ceramic base plate joined to the metal plate, and a release agent provided in a joint surface between the metal plate and the ceramic base plate. A remaining amount of the release agent is less than 5 as an amount of boron measured by fluorescence X-ray analysis, and a crystal grain straining region in the joint surface is equal to or less than 40%, or an amount of crystal grain straining in the joint surface is equal to or less than 0.03%.

Al/AlN joint material, base plate for power module, power module, and manufacturing method of Al/AlN joint material

A method for manufacturing a power module substrate, includes: preparing a ceramics substrate and a metal plate made of pure aluminum; a fusion step in which the ceramics substrate and the metal plate are stacked in layers with a brazing filler metal interposed therebetween, and a fused aluminum layer is formed at an interface between the ceramics substrate and the metal plate by fusing the brazing filler metal which is caused by heating; and a solidifying step in which the fused aluminum layer is solidified by cooling, and a crystal is grown so as to be arranged in a crystal orientation of the metal plate when the fused aluminum layer is solidified.

Method for manufacturing power module substrate, power module substrate, and power module

A high-efficiency production method for a power module substrate with reduced line width of a conductive pattern provides an insulation substrate suitable for realizing a large current and a high voltage of a power module. According to the method, a brazing sheet is temporarily fixed on a first surface of a ceramics substrate by surface tension of a volatile organic liquid. The brazing sheet is also temporarily fixed on the first surface of a conductive pattern member punched from a base material by surface tension of same type of volatile organic liquid. The brazing sheet and the conductive pattern member are heated so as to volatilize the volatile organic liquid and a pressure is applied to the conductive pattern member in its thickness direction. The brazing sheet is melted to join the conductive pattern member with the first surface of the ceramics substrate.

A base plate for a power module includes: a metal plate, a ceramic base plate joined to the metal plate, and a release agent which includes boron provided in a joint surface between the metal plate and the ceramic base plate. A remaining amount of the release agent is less than 5, as an amount of boron measured by fluorescence X-ray analysis, where the amount of boron is defined as a value obtained by an expression: (a peak height of B-K&#x3b1;/a peak height of X-K&#x3b1;) x 100000 and a crystal grain straining region in the joint surface is equal to or less than 40%, or an amount of crystal grain straining in the joint surface is equal to or less than 0.03%.

Growing community of inventors

Gotenba, Japan

Toshiyuki Nagase