Kabushiki Kaisha Toshiba

Other

Hitachi, Ltd.

Toshiba Memory Corporation

Kioxia Corporation

Ebara Corporation

Toshiyuki Morita

Koji Mishima

Kenji Nakamura

Hisashi Kaneko

Hiroaki Inoue

Tetsuo Matsuda

Junji Kunisawa

Natsuki Makino

Katsuya Okumura

Norio Kimura

Nobuo Hayasaka

Manabu Tsujimura

Hiroshi Toyoda

Mitsuko Odagaki

Minoru Ikeda

Kazuaki Nakajima

Yoshihiro Iwama

Hidenori Shinohara

Takeshi Nishioka

Kunihiro Nomura

Seiichi Omoto

Akitsugu Hatazaki

Shigeyuki Sekiguchi

Kazumasa Ito

Yohei Nakada

Katsuya Yokomura

Kenji Uematsu

A semiconductor device according to an embodiment includes: a semiconductor substrate having a diffusion region including an impurity; and a contact provided on the diffusion region. The contact includes a metal film, a barrier metal film covering the metal film, and a conductive film provided between the barrier metal film and the diffusion region and including a conductive material having a higher heat of formation than a heat of formation of the barrier metal film.

Semiconductor device and manufacturing method thereof

A semiconductor device according to present embodiment has first wirings provided in a first area and made of a first metal. A first gap is provided between the first wirings adjacent to each other. Second wirings or contact plugs are provided in a second area in which the first wirings are not provided. The second wirings or contact plugs are made of a second metal. A first insulation film is provided between the second wirings or contact plugs adjacent to each other. The first insulation film has second gaps. A second insulation film is provided on the first wirings, the first gap, and the second gaps.

Semiconductor device including an air gap between wirings and manufacturing method thereof

A semiconductor device according to the present embodiment includes a first wiring part located above a substrate and made of a first metal material. A second wiring part is provided as being superimposed on the first wiring part and having a width substantially equal to that of the first wiring part. A first resistivity of the first wiring part is lower than a second resistivity of the second wiring part when the first and second wiring parts have a first width. The second resistivity is lower than the first resistivity when the first and second wiring parts have a second width larger than the first width. The semiconductor device includes both of an area in which the first and second wiring parts have the first width and an area in which the first and second wiring parts have the second width.

A method for fabricating a semiconductor device according to an embodiment, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a high melting metal film on a side wall and a bottom surface of the opening; forming a seed film of copper (Cu) on the high melting metal film; performing nitriding process after the seed film is formed; and performing electroplating process, in which a Cu film is buried in the opening while energizing the seed film after performing nitriding process.

Method for fabricating semiconductor device and semiconductor device

A semiconductor device, has a semiconductor substrate; a first insulating film which is disposed above the semiconductor substrate; a second insulating film which is disposed above the first insulating film; a wiring which is disposed in the first insulating film and has a plug connecting part; a plug which is disposed in the second insulating film and connected to the plug connecting part; a plurality of first dummy wirings which are disposed in a first area near the plug connecting part in the first insulating film; and a plurality of second dummy wirings which are disposed in a second area near the wiring excepting the plug connecting part in the first insulating film, and have at least either a width smaller than that of the first dummy wirings or a pattern coverage ratio larger than that of the first dummy wirings.

Semiconductor device having first and second dummy wirings varying in sizes/coverage ratios around a plug connecting part

A plating method and apparatus for a substrate fills a metal, e.g., copper, into a fine interconnection pattern formed in a semiconductor substrate. The apparatus has a substrate holding portionhorizontally holding and rotating a substrate with its surface to be plated facing upward. A seal materialcontacts a peripheral edge portion of the surface, sealing the portion in a watertight manner. A cathode electrodepasses an electric current upon contact with the substrate. A cathode portionrotates integrally with the substrate holding portionAn electrode arm portionis above the cathode portionand movable horizontally and vertically and has an anodeface-down. Plating liquid is poured into a space between the surface to be plated and the anodebrought close to the surface to be plated. Thus, plating treatment and treatments incidental thereto can be performed by a single unit.

Method of performing electrolytic treatment on a conductive layer of a substrate

A payment apparatus according to the present invention comprises an input unit to enter transaction information containing a transaction amount, a storage device to store payment method information containing a usage restriction for each of the payment method, a payment method information extracting apparatus to extract payment method information from the storage device by using the transaction information received from the input unit and selects a payment method to execute the payment according to the payment method information extracted, and a payment execution module to execute, by using the transaction information received from the payment method information extracting apparatus, the payment according to the payment method selected

Payment apparatus and method, and money assignment apparatus and method

Digital video disk recorder with hard disk

The present invention relates to a plating method and a plating apparatus which can attain embedding of copper into fine interconnection patterns with use of a plating liquid having high throwing power and leveling properties, and which can make film thickness of a plated film substantially equal between an interconnection region and a non-interconnection region. A plating method comprises filling a plating liquid containing metal ions and an additive into a plating space formed between a substrate and an anode disposed closely to the substrate so as to face the substrate, and changing concentration of the additive in the plating liquid filled into the plating space during a plating process.

Plating method and plating apparatus

A plating method and apparatus for a substrate fills a metal, e.g., copper, into a fine interconnection pattern formed in a semiconductor substrate. The apparatus has a substrate holding portion horizontally holding and rotating a substrate with its surface to be plated facing upward. A seal material contacts a peripheral edge portion of the surface, sealing the portion in a watertight manner. A cathode electrode passes an electric current upon contact with the substrate. A cathode portion rotates integrally with the substrate holding portion . An electrode arm portion is above the cathode portion and movable horizontally and vertically and has an anode face-down. Plating liquid is poured into a space between the surface to be plated and the anode brought close to the surface to be plated. Thus, plating treatment and treatments incidental thereto can be performed by a single unit.

Plating apparatus

Growing community of inventors

Yokkaichi, Japan

Toshiyuki Morita