Sharp Kabushiki Kaisha Corporation

Toshiyuki Matsushima

Yorishige Ishii

Hideaki Fujita

Yukio Kurata

Toshihiro Tamura

Kuniaki Okada

Yoshifumi Iwai

Shinichi Sato

Yukiharu Akiyama

An optical communication module including: an emission member for emitting a transmission light beam; and a connection member for detachably connecting an optical fiber for external communication with the emission member, the connection member including a tubular accommodation part for coaxially receiving and fixing an end of the optical fiber to be connected, wherein the emission member and the connection member are arranged such that the transmission light beam intersects with an optical axis of the optical fiber at a predetermined angle to enter an end face of the optical fiber when the optical fiber is connected and the transmission light beam collides with an inner wall of the accommodation part when the optical fiber is detached.

Optical communication module

A two-way optical communication device for use in a two-way optical communication system for transmitting and receiving an optical signal via a single optical fiber, comprises a light emitting element for generating transmitted light, a photodetector for receiving incoming light emitted from the optical fiber, and a reflection mirror made of a thin film having a high reflectance, having first and second surfaces, the first surface being opposite to the second surface. An optical member including the reflection mirror is provided closer to the optical fiber than the light emitting element. The incoming light emitted from the optical fiber is reflected by the first surface of the reflection mirror to be guided to the photodetector. The transmitted light emitted from the light emitting element or the transmitted light reflected by an end surface of the optical fiber is reflected by at least a portion of the second surface of the reflection mirror to prevent the transmitted light from entering the photodetector.

Two-way optical communication device, two-way optical communication system, and method for assembling two-way optical communication device

There is featured a processing method for processing a target body that includes setting a beam area formed by a laser beam on the organic insulating film so as to be larger than an area formed by projecting a target part of an organic insulating film onto a horizontal plane. The method also includes, subsequently moving the organic insulating film toward the irardiated region of the laser beam, and terminating the irradiation with the laser beam when the end part of the target part coincides with the moving end part of the laser beam. This enables the resultant processed target surface to be smooth and free from reaction product including decomposed segments of the target body. Also featured is an optical component including an optical element having a surface that is processed according to the processing methods of the present invention.

Method of processing and optical components

Bidirectional optical communication devices are attached to both ends of an optical fiber, and each of them has a transmitting light wave guide coupled to a semiconductor laser and a received light wave guide which is coupled to a photodiode, and optically separated from the transmitting light wave guide. On the end face of the light-incident area of the optical fiber on which transmitting light coupled to the optical fiber from the transmitting light wave guide is directed, the light axis of the transmitting light is set so as to tilt with respect to the normal to the end face of the light-incident area so as to prevent reflected light on the end face of the light-incident area caused by the transmitting light from entering the photodiode installed on the same side as the semiconductor laser. Consequently, light communication is simultaneously carried out bidirectionally in a stable manner by using a single optical fiber; thus, it is possible to provide a bidirectional optical communication device and a bidirectional optical communication apparatus using this device at low costs.

Bidirectional optical communication device and bidirectional optical communication apparatus

There is featured a processing method for processing a target body that includes setting a beam area formed by a laser beam on the organic insulating film so as to be larger than an area formed by projecting a target part of an organic insulating film onto a horizontal plane. The method also includes, subsequently moving the organic insulating film toward the irradiated region of the laser beam, and terminating the irradiation with the laser beam when the end part of the target part coincides with the moving end part of the laser beam. This enables the resultant processed target surface to be smooth and free from reaction product including decomposed segments of the target body. Also featured is an optical component including an optical element having a surface that is processed according to the processing methods of the present invention.

Optical components including an optical element having a surface that is tapered

A two-way optical communication module includes a main waveguide which is optically coupled to an optical fiber and directs light incident from the optical fiber to a light-receiving element and a sub waveguide which is optically coupled to the side of the main waveguide and directs light emitted from a light-emitting element to the optical fiber so as to carry out an efficient two-way optical communication by using one optical fiber without the necessity for an optical branch device. With this arrangement, it is possible to provide an inexpensive and small-sized two-way optical communication module which readily enables an integration with other elements so as to exhibit suitability for a small-scale network, and to provide a two-way optical communication link which uses the two-way optical communication module.

Two-way optical communication device and two-way optical communication

A method of manufacturing a semiconductor device having a triple-well structure, includes the steps of: forming a first well layer of a second conductivity type by implanting, as a first ion implantation, impurity ions of the second conductivity type to a specific depth from the surface of a semiconductor substrate of a first conductivity type and then subjecting the semiconductor substrate to an annealing treatment; forming a second ion-implanted region by implanting, as a second ion implantation, impurity ions of the second conductivity type into an end portion of first well layer with a specific width and at a depth from the surface of the semiconductor substrate to the surface of the first well layer to surround the first well layer; forming a third ion-implanted region by implanting, as a third ion implantation, impurity ions of the first conductivity type into a portion of the semiconductor substrate surrounded by the first well layer and the second ion-implanted region and at depth from the surface of the semiconductor surface to the surface of the first well layer; forming a second well layer and a third well layer by an annealing treatment of the second ion-implanted region and the third ion-implanted region after the second ion implantation and the third ion implantation respectively, or after the third ion implantation simultaneously.

Growing community of inventors

Nara, Japan

Toshiyuki Matsushima