Sony Corporation

Toshiyuki Kunikiyo

Akito Ugawa

Eriko Matsui

Masayuki Murakami

Yoshifumi Mori

Yuriko Kaino

Yousuke Ohta

Shuichiro Yasuda

Mao Katsuhara

Yoshihiro Miyamoto

Tatsushiro Hirata

Mitsunori Nakamoto

Shinnosuke Hattori

Hideo Yamakado

There are provided a memory element and a memory device in which the state of erasing remains stable by deactivation of a localized site(s) formed inside of a resistance change layer. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer including an n-type dopant or a p-type dopant, and disposed on the first electrode side, and an ion source layer disposed between the resistance change layer and the second electrode.

Memory element and memory device

There are provided a memory element and a memory device with a smaller range of element-to-element variation of electrical characteristics. The memory element includes a first electrode, a memory layer, and a second layer in this order. The memory layer includes a resistance change layer including a plurality of layers varying in diffusion coefficient of mobile atoms, and an ion source layer disposed between the resistance change layer and the second electrode.

A field-effect transistor includes a channel-forming region composed of an organic compound crystal including &#x3c0;-electron conjugated molecules each containing chalcogen atoms as a constituent, wherein the distance between chalcogen atoms of adjacent &#x3c0;-electron conjugated molecules is short, and the organic compound crystal has a periodic structure in which &#x3c0;-electron conjugated molecules are two-dimensionally or three-dimensionally linked together.

Organic compound crystal and field-effect transistor

A flexible organic single crystal has a plurality of columns. The plurality of columns includes a plurality of planar organic compounds arranged so that molecular planes of molecules are respectively parallel to each other. As the organic compound, an organic compound is used that has a large molecular plane and a large area overlapping on an adjacent organic compound due to an intermolecular interaction. Further, energy changes in proportion to a strain. In this structure, when force along the direction of a stack axis is exerted, an angle formed by the stack axis and the normal of the molecular plane of the organic compound changes. Thus, the single crystal obtains flexibility.

Organic crystal

A novel metal complex of a heterocyclic aromatic compound which shows a low activation energy, is stabilized structurally, is capable of modulation of the structure thereof, and capable of preferably functioning as a molecular device in technological fields. The metal complex of a heterocyclic aromatic compound comprises a transition metal (for example, silver ion) as a central atom, and basic ligands comprised of a 5-membered heterocyclic aromatic compound (for example, pyrrole rings), in which the position of the central atom can be changed by an internal factor such as transfer of an electric charge or by an external factor such as application of an electric field, a change in acidity of the surrounding environment, etc., whereby the number of atoms (or the number of electrons) relating to the coordination ability can be modulated, and, upon polymerization, the conformation can be modulated depending on the position of the central atom.

Metal complex of heterocyclic aromatic compound

Metal complexes of heterocyclic aromatic compounds

Growing community of inventors

Kanagawa, Japan

Toshiyuki Kunikiyo