Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Matsushita Electronics Corporation

Toshiyuki Fukuda

Masanori Minamio

Kenichi Itou

Noboru Takeuchi

Hiroaki Fujimoto

Takeshi Kawabata

Yutaka Harada

Yoshiki Takayama

Shigetoyo Kawakami

Noriyuki Yoshikawa

Tetsushi Nishio

Motoaki Satou

Takayuki Yoshida

Kiyokazu Itoi

Hisaki Fujitani

Yoshihiro Tomita

Yuichiro Yamada

Nozomi Shimoishizaka

Ryuichi Sahara

Fumihiko Kawai

Yoshiaki Shimizu

Atsuhito Mizutani

Seiichi Nakatani

Kazuhiro Nobori

Toru Nomura

Takao Ochi

Kiyoshi Fujihara

Yoshiyuki Arai

Tomoko Komatsu

Fumito Itou

Akira Oga

Hiroyuki Ishida

Takeshi Morikawa

Shuichi Ogata

Fumito Itoh

Hiroshi Horiki

Takuma Motofuji

Hideki Takehara

Toshio Tsuda

Tetsuo Ito

Eizou Fujii

Kimihito Kuwabara

Tetsumasa Maruo

Ichiro Okumura

Yukihiro Kozaka

Akio Kuito

Masahiko Ohiro

Masanori Koichi

Yoshinori Satoh

Hideyuki Nakanishi

Tadayoshi Nakatsuka

Takashi Yui

Tooru Aoyagi

Kenichi Ito

Masao Takahashi

Katsushi Tara

Shinichi Ijima

Toshio Fujii

Kazuhiko Matsumura

Isamu Aokura

Yoshirou Nakata

Yoshinobu Kunitomo

Toshihiro Miyoshi

Tadaaki Mimura

Masanori Nishino

Katsutoshi Shimizu

Yukitoshi Ota

Yasutake Yaguchi

Keiji Miki

Toshitaka Akahoshi

Masaya Tateyanagi

Toshihiko Sakashita

Masatoshi Shinagawa

Isao Hayami

Mutsuo Tsuji

Keisuke Kodera

Hiroto Ohsaki

Shigeki Okamoto

Yoshiaki Takeoka

Hisanori Ishiguro

Yuu Hasegawa

Mitsuhiro Mishima

Tadahisa Inui

Masanori Mimamio

Taku Gobara

Yutaka Fukai

Takahito Ishikawa

Hideki Sakota

Tomoki Kawasaki

Hisashi Umeda

Hiroki Utatsu

Toshimasa Itooka

Junya Furuyashiki

An electronic component module includes a board, a plurality of external terminals provided on a first surface of the board, and a first semiconductor chip provided on a region on the first surface surrounded by the plurality of external terminals. The first semiconductor chip protrudes more along a normal to the first surface than ends of the external terminals do.

Electronic component module and an assembly including the same

A light-emitting device includes a light-emitting element and a wavelength conversion layer. The light-emitting device further includes the translucent member having a translucent base and the wavelength conversion layer formed on the translucent base. The wavelength conversion layer does not contact the light-emitting element, and is sealed in the light-emitting device.

Light-emitting device

A semiconductor device includes: a lead frame; a semiconductor element held by the lead frame; a frame body which is formed on the lead frame to surround the semiconductor element, cover a side surface of the lead frame, and expose a bottom surface of the lead frame; and a protective resin filling a region surrounded by the frame body. The lead frame includes an uneven part formed in a section which is part of an upper surface of the lead frame, and is covered with the frame body.

Semiconductor device

A semiconductor device capable of realizing highly reliable three-dimensional mounting, and a method of manufacturing the same, are provided. A projected electrodeis formed in a region outside of an element mounting region of a substrate. The projected electrodeincludes a protruding portion that protrudes from the front face of a molding resin portion. The distal end of the protruding portion is a flat face. In addition, a portion of the projected electrodewhose cross section is larger than the protruding portion is positioned inside the molding resin portion

Semiconductor device and method of manufacturing the same

An optical device is equipped with a light receiving regionand a peripheral circuit regionlocated around the light receiving regionon a major surface of an light receiving element; electrodes for external connectionelectrically connected to the peripheral circuit regionformed on a back surface opposite to the major surface of the light receiving element; a transparent membercovering the light receiving regionadhered on the major surface of the light receiving elementwith a light-transmitting adhesive; and a molding resinfor coating side surfaces of the transparent memberand the major surface of the light receiving elementexcluding the region covered with the transparent member

Optical device and method for manufacturing optical device, and camera module and endoscope module equipped with optical device

A semiconductor deviceformed on a semiconductor chip substratehas a plurality of circuit blocks made up of circuits each containing at least a metal oxide semiconductor (MOS) transistor, the circuit blocks being covered on top with a protective filmto protect the circuits. A plurality of bumpsare formed, at least via the protective film, only on circuit blocks whose current-carrying ability and threshold voltage do not satisfy predetermined values and which are in need of performance enhancement. The bumpsimpose stresses on the MOS transistors, increasing the mobility of the MOS transistorsand thereby improving the performance of the semiconductor device

An insulation is provided in a portion surrounding a light receiving portion in a semiconductor element, and a sealing resin is provided around the insulation, thereby warping the insulation outward when viewed from the light receiving portion to prevent diffuse light from returning to the light receiving portion of the semiconductor element.

Semiconductor device and semiconductor device manufacturing method

The present invention includes a die pad; signal leads, ground connection leads connected to the die pad; a semiconductor chip including electrode pads for grounding; metal thin wires, and an encapsulating resin for encapsulating the die pad and the semiconductor chip and encapsulating the signal leads and the ground connection lead such that lower portions of the signal leads and the ground connection lead are exposed as external terminals. The ground connection lead is connected to the electrode pad for grounding, so that the resin-encapsulated semiconductor device is electrically stabilized. Furthermore, interference between high frequency signals passing through the signal leads can be suppressed by the die pad and the ground connection leads.

Resin encapsulated semiconductor device and method for manufacturing the same

The semiconductor device includes: a base; a first mount placed on the bottom of the base; a second mount placed on the top of the base; a first light-emitting element placed on the bottom of the first mount; and a second light-emitting element placed on the top of the second mount for emitting light. The first light-emitting element and the second light-emitting element are placed so that the emission direction of light from the second light-emitting element is at an angle of depression with respect to the emission direction of light from the first light-emitting element and that the emission direction of light from the first light-emitting element and the emission direction of light from the second light-emitting element substantially coincide with each other as viewed from above the base.

A semiconductor device includes: a semiconductor element; a die pad with the semiconductor element mounted thereon; a plurality of electrode terminals each having a connecting portion electrically connected with the semiconductor element; and a sealing resin for sealing the semiconductor element, the die pad and the electrode terminals so that a surface of each electrode terminal on an opposite side from a surface having the connecting portion is exposed as an external terminal surface. A recess having a planar shape of a circle is formed on the surface of each electrode terminal with the connecting portion, and the recess is arranged between an end portion of the electrode terminal exposed from an outer edge side face of the sealing resin and the connecting portion. While a function of the configuration for suppressing the peeling between the electrode terminal and the sealing resin can be maintained by mitigating an external force applied to the electrode terminal, the semiconductor device can be downsized.

A stacked semiconductor module is made by stacking a second semiconductor device having a second semiconductor chip mounted to the top surface of a second semiconductor substrate above the top surface of a first semiconductor device having a first semiconductor chip mounted to a first semiconductor substrate. The top surface of the first semiconductor substrate is provided with a first connection terminal and the bottom surface of the first semiconductor substrate is provided with an external connection terminal. A region of the bottom surface of the second semiconductor substrate lying opposite to the second semiconductor chip is provided with a second connection terminal. A conductive connecting member connects the first connection terminal to the second connection terminal.

Stacked semiconductor module

A resin molding moldwith a cavityhas a resin injection portfrom which a molding resinis injected toward the cavity, and an air release portfrom which air from the cavityis released during resin injection. Not only the resin injection portbut also the air release portis formed in a top surface portionof the cavity. Thus, even if a resin burr remains in the resin injection portor the air release port, it can be prevented from adhering to an external terminalA provided on a front surface portionof the substrate

Molded semiconductor device, apparatus for producing the same, and method for manufacturing the same

One end of a flexible substrate is connected to a solid-state image sensing device and the other end constitutes an external connection part in which external lead-out electrodes are provided. A plurality of electronic components are mounted on a mounting part of the flexible substrate. The flexible substrate is bent at a first bent part thereof to make an acute angle with the solid-state image sensing device and also bent at a second bent part thereof to make an acute angle with the external connection part. The two acute angles are alternate angles and the solid-state image sensing device has a cross section of the letter Z.

Optical device module, fabrication method thereof, optical device unit and fabrication method thereof

A semiconductor image sensor includes: a semiconductor imaging element including an imaging area, a peripheral circuit area, and an electrode area; cylindrical electrodes provided on electrode terminals so as to be electrically connected with an external device; and a transparent resin layer provided on the upper surface of the semiconductor imaging element. The upper surface of each cylindrical electrode and the upper surface of the transparent resin layer are substantially of the same height.

Semiconductor image sensor and method for fabricating the same

Growing community of inventors

Kyoto, Japan

Toshiyuki Fukuda