Canon Kabushiki Kaisha

Toshiyasu Sakai

Ichiro Saito

Teruo Ozaki

Kenji Ono

Sakai Yokoyama

Kazuaki Shibata

Satoshi Ibe

Masataka Kato

Takuya Hatsui

Hiroshi Higuchi

Yoshiyuki Imanaka

Yoshinao Ogata

Shuji Koyama

Takaaki Yamaguchi

Takahiro Matsui

Muga Mochizuki

Jun Yamamuro

Masaya Uyama

Hiroyuki Abo

Seiko Minami

Takayuki Kamimura

Kazuya Abe

Atsunori Terasaki

Masahisa Watanabe

Mitsuru Chida

Noriyasu Ozaki

Masao Kato

Masahiko Kubota

Nobuyuki Hirayama

Ryoji Kanri

Hiroyuki Suzuki

Hiroyuki Morimoto

Kenji Takahashi

Yoshinori Misumi

Yuzuru Ishida

Tamaki Sato

Maki Kato

Yukihiro Hayakawa

Yoshiyuki Fukumoto

Masaki Ohsumi

Kazuhiro Hayakawa

Shimpei Otaka

Masafumi Morisue

Keisuke Kishimoto

Hiroto Komiyama

Tetsushi Ishikawa

Tomohiro Takahashi

Norihiro Yoshinari

Yasuaki Tominaga

Shuichi Tamatsukuri

Takumi Shimoda

Yoshinori Kawasaki

Toru Kawaguchi

Kenji Kumamaru

A method for manufacturing a liquid discharge head comprising: a substrate, a protective layer covering at least a part of the substrate, and a laminate member formed on the protective layer, wherein the method comprises steps of: forming the protective layer on at least a part of the substrate; forming the laminate member on the protective layer with a part of the protective layer exposed, the protective layer comprises at least Si and C, a content of oxygen in a bulk of the protective layer is less than 20 atomic % in terms of an element composition ratio, a modified layer with a content of oxygen of 20 atomic % or more in terms of an element composition ratio is present on a surface of the protective layer, and a thickness of the modified layer between the protective layer and the laminate member is 3.40 nm or less.

Method for manufacturing liquid discharge head and liquid discharge head

A liquid discharge head includes a substrate that is provided with a supply passage having an opening; an energy generating element that is disposed on a surface of the substrate; an electric wiring layer; an insulation layer; and a discharge port member that forms a discharge port. The insulation layer has an end portion adjacent to the opening of the supply passage and set back from an edge of the opening of the supply passage toward a side where the energy generating element is disposed. The electric wiring layer includes a plurality of electric wiring layers layered on each other.

Liquid discharge head, recording apparatus, and method of manufacturing liquid discharge head

Provided is a liquid ejection head substrate, in which a plurality of units are arranged. Each of the units includes: a pressure generating element formed on a first surface of a support substrate; and a pair of independent liquid chambers, which are formed on both sides of the pressure generating element so as to be opposed to each other, and are opened to the first surface of the support substrate. The liquid ejection head substrate includes, in the support substrate: a first common liquid chamber communicating to a plurality of independent liquid chambers on one side of the pair of independent liquid chambers; a second common liquid chamber communicating to a plurality of independent liquid chambers on another side of the pair of independent liquid chambers; and a partition wall separating the first common liquid chamber and the second common liquid chamber from each other.

Liquid ejection head substrate

A first substrate including a plurality of supply ports through which a liquid is supplied to a position of an electrothermal conversion element and a second substrate including a common liquid supply chamber from which the liquid is supplied to the plurality of supply ports are coupled together with an intermediate layer therebetween. The intermediate layer includes a first region and a second region having lower thermal conductivity than the first region.

Liquid supply substrate, method of producing the same, and liquid ejecting head

Method for producing liquid-ejection head

A method of manufacturing a plurality of semiconductor chips for a liquid discharge head from a substrate includes forming trenches of a linear form through etching from the second surface along intended cutting portions, forming modified portions in the substrate by irradiating a laser beam from the first surface side along the intended cutting portions, and splitting the substrate into the plurality of semiconductor chips for a liquid discharge head, by cutting the substrate with stress applied to the modified portions. The intended cutting portions include inclined portions extending in a direction inclined with respect to a crystal orientation plane of the substrate and uninclined portions extending in a direction along the crystal orientation plane of the substrate, and the trenches are formed at least along the inclined portions.

Method of manufacturing semiconductor chips for liquid discharge head

A method for manufacturing a structure having a substrate in which holes are formed and a photosensitive resin layer provided on the substrate in such a manner as to cover at least a part of the holes includes a process of preparing a substrate in which holes formed by a surface in which a wavelike shape is formed and a photosensitive resin layer provided on the substrate in such a manner as to cover at least a part of the holes and an exposure process of exposing the photosensitive resin layer on the substrate.

Method for manufacturing structure

A method of forming a through-substrate having a first surface and a second surface opposite to the first surface, the method causing the first surface to communicate with the second surface through the substrate, the method including: a first step that forms a first trench from the first surface side of the substrate using dry etching, the first trench having side surfaces on which protective film is formed; and a second step that forms a second trench from the second surface side using dry etching, the second trench communicating with the first trench having the side surfaces on which the protective film is formed.

Method of forming through-substrate

A substrate processing method includes forming a first hole in a first surface of a silicon substrate to have a depth that it does not extend through the substrate and forming a second hole in a second surface to make the second hole to communicate with the first hole, so that a through hole formed of the first and second holes is formed in the substrate. The process of forming the second hole includes forming a communication portion wider than an opening of the first hole between the first and second holes after the second hole has been made to communicate with the first hole by dry etching.

Substrate processing method and method of manufacturing substrate for liquid discharge head including forming hole in substrate by dry etching

A liquid discharge head including a substrate, and an energy-generating element. The substrate is provided with a flow path that penetrates through the substrate from the first surface to a second surface, the flow path supplying the liquid from the second surface side to the first surface side. The flow path includes a plurality of first flow paths and a second flow path that is positioned on the second surface side with respect to the first flow paths. The plurality of first flow paths are open on a bottom portion of the second flow path, and the plurality of first flow paths include a long flow path relatively long in a direction perpendicular to the first surface, and a relatively short flow path. The long flow path has a flow path resistance per unit length that is smaller than that of the short flow path.

Liquid discharge head, liquid discharge apparatus, and method of manufacturing liquid discharge head

A method for processing a silicon substrate, comprising the steps of providing a silicon substrate having a first surface and a second surface, forming a non-penetrated hole extending from the first surface toward the second surface side in the silicon substrate, sticking a sealing tape comprising a support member and an adhesive layer on the first surface and filling at least part of the non-penetrated hole with the adhesive layer, performing reactive ion etching from the second surface toward the first surface side to allow the reactive ion etching to reach the adhesive layer filled in the non-penetrated hole and to expose the adhesive layer, and peeling the sealing tape from the silicon substrate to form a through hole in the silicon substrate.

Method for processing silicon substrate

A substrate processing method for forming a through-hole in a substrate by reactive ion etching includes preparing a substrate that has a first surface and a second surface and on the first surface side of which a first layer and a second layer are disposed, the second surface being on the opposite side to the first surface, the second layer covering the first layer; and performing reactive ion etching on the substrate from the second surface to form a through-hole extending through the substrate from the first surface to the second surface, the reactive ion etching being performed to reach the first layer. The etching rate of the second layer for the reactive ion etching is lower than that of the first layer.

Substrate processing method

A method for producing a liquid-ejection head includes the steps of: forming molds on or above a substrate, the molds being used as molding members for forming liquid chambers; forming a flow-passage-forming member by depositing an inorganic material on or above the substrate and the molds by chemical vapor deposition, the flow-passage-forming member having depressed portions each formed in an area between an adjacent pair of liquid-chamber side walls in which the molds are not formed; forming a photosensitive resin layer by depositing a photosensitive resin on the flow-passage-forming member and in the depressed portions; forming filling members in the depressed portions by grinding the photosensitive resin layer until the upper surface of an orifice plate is exposed; after grinding the photosensitive resin layer, forming ejection ports in the flow-passage-forming member; and, after forming the ejection ports, removing the molds.

A process for producing a substrate for a liquid ejection head, including a step of forming a liquid supply port passing through a silicon substrate by dry etching, the step being a step of sequentially repeating the steps of (1) forming an etching protection film on the silicon substrate, (2) removing a bottom portion of the etching protection film, and (3) etching the silicon substrate, wherein a sheath formed in the step (2) is thicker than a sheath formed in the step (3).

Processes for producing substrate for liquid ejection head

According to one aspect of the present invention, there is provided a dry etching method which carries out patterning of a resin film provided on a substrate, by reactive ion etching using a resist mask, wherein a gas mixture containing CFgas with a percentage flow rate of 1.0 to 5.0% is used as an etching gas; and pressure in an etching reaction chamber in an apparatus used for the reactive ion etching is 1.0 Pa or more.

Dry etching method

Growing community of inventors

Kawasaki, Japan

Toshiyasu Sakai