Hitachi Chemical Company, Ltd.

Toshiyasu Kawai

Hidekazu Matsuura

Hiromasa Kawai

Fumiaki Kanega

Minoru Suzuki

Akio Takahashi

Masao Suzuki

Shin Nishimura

Akira Kageyama

Masahiro Suzuki

Yoshihiro Nomura

Yoshiyuki Tanabe

Shinji Iioka

Tomohiro Nagoya

Kiyohide Tateoka

Naoko Tomoda

Yoshihiko Honda

The object of the present invention is to provide an adhesion film for semiconductor that is capable of bonding a semiconductor chip to a lead frame tightly at an adhesion temperature lower than that of the adhesion film of a traditional polyimide resin without generation of voids and that can also be used for protection of lead frame-exposed area, a thermoplastic resin composition for semiconductor for use in the adhesive agent layer therein, and a lead frame having the adhesive film and a semiconductor device; and, to achieve the object, the present invention provides a thermoplastic resin composition for semiconductor, comprising a thermoplastic resin obtained in reaction of an amine component containing an aromatic diamine mixture (A) containing 1,3-bis(3-aminophenoxy)benzene, 3-(3'-(3&#x2033;-aminophenoxy)phenyl)amino-1-(3&#x2032;-(3&#x2033;-aminophenoxy)phenoxy)benzene and 3,3&#x2032;-bis(3&#x2033;-aminophenoxy)diphenylether, and an acid component (C), an adhesion film for semiconductor using the same, a lead frame having the adhesion film and a semiconductor device using the same.

Thermoplastic resin composition for semiconductor, adhesion film, lead frame, and semiconductor device using the same, and method of producing semiconductor device

An adhesive film for semiconductor, which comprises at least one resin layer, and, after bonded to a lead frame, has at 25&#xb0; C. a 90&#xb0;-peel strength of at least 5 N/m between the resin layer and the lead frame, and, after a lead frame is bonded to the adhesive film for semiconductor and sealed with a sealing material, has at least at one point of temperatures ranging from 0 to 250&#xb0; C. a 90&#xb0;-peel strength of at most 1000 N/m between the resin layer and each of the lead frame and the sealing material; a lead frame and a semiconductor device using the adhesive film for semiconductor; and a method of producing a semiconductor device.

Adhesive film for semiconductor, lead frame and semiconductor device using the same, and method of producing semiconductor device

An adhesive film for semiconductor use of the present invention is used in a method in which, after the adhesive film for semiconductor use is laminated to one side of a metal sheet, the metal sheet is processed to give a wiring circuit, a semiconductor die is mounted and molded, and the adhesive film is then peeled off. The adhesive film includes a resin layer A formed on one side or both sides of a support film, the 90 degree peel strength between the resin layer A and the metal sheet prior to the processing of the metal sheet laminated with the adhesive film for semiconductor use to give the wiring circuit is 20 N/m or greater at 25&#xb0; C., and the 90 degree peel strengths, after molding with a molding compound the wiring circuit laminated with the adhesive film for semiconductor use, between the resin layer A and the wiring circuit and between the resin layer A and the molding compound are both 1000 N/m or less at at least one point in the temperature range of 0&#xb0; C. to 250&#xb0; C.

Adhesive film for semiconductor, metal sheet with such adhesive film, wiring substrate with adhesive film, semiconductor device, and method for manufacturing semiconductor device

An adhesive film for semiconductor, which comprises at least one resin layer, and, after bonded to a lead frame, has at 25&deg; C. a 90&deg;-peel strength of at least 5 N/m between the resin layer and the lead frame, and, after a lead frame is bonded to the adhesive film for semiconductor and sealed with a sealing material, has at least at one point of temperatures ranging from 0 to 250&deg; C. a 90&deg;-peel strength of at most 1000 N/m between the resin layer and each of the lead frame and the sealing material; a lead frame and a semiconductor device using the adhesive film for semiconductor; and a method of producing a semiconductor device.

Adhesive film for semiconductor, lead frame and semiconductor device using the same, and method for manufacturing semiconductor device

A resin composition useful as an adhesive film and insulating material for a multilayer wiring substrate or electronic parts comprises (A) a polymer containing a quinoline ring represented by the formula (1) in the structure such as 6,6&prime;-bis(2-(4-fluorophenyl)-4-phenylquinoline) and 4,4&prime;-(1,1,1,3,3,3-hexafluoro-2,2-propylidene)bisphenol, and (B) a bismaleimide compound represented by the formula (2) such as 2,2-bis((4-maleimidophenoxy)phenyl)propane.

Adhesive film of quinoline polymer and bismaleimide

A transparent resin obtained by polymerizing a monomer having an alkylene oxide group, a polyfunctional (meth)acrylate having a divalent branched hydrocarbon group and other copolymerizable vinyl monomer, if necessary, is suitable as an elementary material for a plastic lens with excellent heat resistance and hue.

Transparent resin and plastic lens

Plastic lens

Growing community of inventors

Ichihara, Japan

Toshiyasu Kawai