Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Toshiya Yonehara

Daimotsu Kato

Tatsuo Shimizu

Tomio Ono

Shintaro Enomoto

Tomoaki Sawabe

Keiji Sugi

Hiroshi Ono

Akira Mukai

Masahiko Kuraguchi

Yasushi Shinjo

Yosuke Kajiwara

Akio Amano

Yukitami Mizuno

Tomoko Sugizaki

Kazuhiro Suzuki

Yasutaka Nishida

Hisashi Saito

Hideyuki Funaki

Tomomasa Ueda

Hajime Yamaguchi

Nobuyoshi Saito

Honam Kwon

Koichi Ishii

Risako Ueno

Tatsunori Sakano

Hiroto Honda

Ikuo Fujiwara

Shintaro Nakano

Kentaro Miura

Hitoshi Yagi

Taeko I Urano

According to one embodiment, a semiconductor device includes first to third electrodes, first and second semiconductor regions, and a first insulating film. The first semiconductor region includes a first partial region, a second partial region, a third partial region between the first and second partial regions, a fourth partial region between the first and third partial regions, and a fifth partial region between the third and second partial regions. The second semiconductor region includes a sixth partial region and a seventh partial region. The third electrode overlaps the sixth and seventh partial regions. The first insulating film includes a portion provided between the third electrode and the third partial region, between the third electrode and the fourth partial region, between the third electrode and the fifth partial region, between the third electrode and the sixth partial region, and between the third electrode and the seventh partial region.

Semiconductor device and method for manufacturing the same

A semiconductor device according to an embodiment includes a nitride semiconductor layer; an insulating layer; a first region disposed between the nitride semiconductor layer and the insulating layer and containing at least one element of hydrogen and deuterium; and a second region disposed in the nitride semiconductor layer, adjacent to the first region, and containing fluorine.

Semiconductor device, method for manufacturing the same, power circuit, and computer

A photodetector includes a first semiconductor layer and a second semiconductor layer provided on the first semiconductor layer and detecting light. The first semiconductor layer has a cavity portion for reflecting incident light.

Photodetector, photodetection system, lidar apparatus, vehicle, and method of manufacturing photodetector

A photodetector according to an embodiment includes: a first semiconductor layer; a porous semiconductor layer disposed on the first semiconductor layer; and at least one photo-sensing element including a second semiconductor layer of a first conductivity type disposed in a region of the porous semiconductor layer and a third semiconductor layer of a second conductivity type disposed on the second semiconductor layer.

Photodetector and LIDAR device using the same

In one embodiment, a semiconductor device is provided with a semiconductor layer made of a nitride semiconductor, a first gate electrode, a first structure body between the first gate electrode and the semiconductor layer, and a first insulating layer between the semiconductor layer and the first structure body. The first structure body has a first intermediate layer made of a conductor to suppress generation of charges at respective interfaces with adjacent layers, a first layer having dielectric property between the first gate electrode and the first intermediate layer, and a second layer having dielectric property between the first gate electrode and the first layer, and has dipoles at an interface between the first layer and the second layer.

Semiconductor device and electric apparatus

A semiconductor device according to an embodiment includes a first nitride semiconductor layer; a second nitride semiconductor layer located on the first nitride semiconductor layer, a first and second electrode located on or above the first nitride semiconductor layer; a trench located in the second nitride semiconductor layer between the first electrode and the second electrode, and including a bottom surface and a side surface, the bottom surface being located in one of the first nitride semiconductor layer and the second nitride semiconductor layer; a gate electrode located in the trench; a gate insulating layer located between the bottom surface and the gate electrode and between the side surface and the gate electrode; and a region located in at least one of the first nitride semiconductor layer and the second nitride semiconductor layer, including a first portion adjacent to the bottom surface, and containing fluorine.

Semiconductor device, semiconductor device manufacturing method, power supply circuit, and computer

A semiconductor device according to an embodiment includes a first nitride semiconductor layer; a second nitride semiconductor layer on the first nitride semiconductor layer; a first electrode and a second electrode disposed on or above the first nitride semiconductor layer; a gate electrode above the first nitride semiconductor layer; and a gate insulating layer, the gate insulating layer including a silicon oxide film and an aluminum oxynitride film, the aluminum oxynitride film disposed between the first nitride semiconductor layer and the silicon oxide film, a first atomic ratio of nitrogen relative to a sum of oxygen and nitrogen at a first position in the aluminum oxynitride film being higher than a second atomic ratio of nitrogen relative to a sum of oxygen and nitrogen at a second position in the aluminum oxynitride film, and the second position being closer to the silicon oxide film than the first position.

Semiconductor device, power supply circuit, and computer

A method for manufacturing a semiconductor device according to an embodiment includes: forming an insulating layer having a first plane in contact with a nitride semiconductor layer and a second plane opposite to the first plane and containing at least one of an oxide and an oxynitride; and performing first heat treatment at 600&#xb0; C. or more and 1100&#xb0; C. or less in a state where a voltage making a first plane side positive relative to a second plane side is applied to the insulating layer.

Method for manufacturing semiconductor device

A semiconductor device includes a nitride semiconductor layer, a first electrode and second electrode on the nitride semiconductor layer, a gate electrode, and a gate insulating layer between the nitride semiconductor layer and the gate electrode. The gate insulating layer has a first oxide region containing at least any one element of aluminum and boron, gallium, and silicon. When a distance between the first end portion and the second end portion of the first oxide region is defined as d1, and a position separated by d1/10 from the first end portion toward the second end portion is defined as a first position, an atomic concentration of gallium at the first position is 80% or more and 120% or less of that of the at least any one element.

According to one embodiment, a semiconductor device includes a first semiconductor layer including a nitride semiconductor, a first electrode separated from the first semiconductor layer in a first direction, and a first insulating film including silicon and oxygen and being provided between the first semiconductor layer and the first electrode. The first insulating film has a first thickness in the first direction. The first insulating film includes a first position, and a distance between the first position and the first semiconductor layer is &#xbd; of the first thickness. A first hydrogen concentration of hydrogen at the first position is 2.5&#xd7;10atoms/cmor less.

Semiconductor device and electrical device

A semiconductor device according to an embodiment includes: a wide bandgap semiconductor layer; a gate electrode; and a gate insulating layer disposed between the wide bandgap semiconductor layer and the gate electrode, including a first silicon oxide film, a second silicon oxide film between the first silicon oxide film and the gate electrode, and a first aluminum oxynitride film between the first silicon oxide film and the second silicon oxide film, and having a first atomic ratio of nitrogen relative to a sum of oxygen and nitrogen at a first position in the first aluminum oxynitride film which is lower than a second atomic ratio of nitrogen relative to a sum of oxygen and nitrogen at a second position, closer to the second silicon oxide film than the first position, in the first aluminum oxynitride film.

Semiconductor device, inverter circuit, driving device, vehicle, elevator, power supply circuit, and computer

According to one embodiment, a sensor includes a light emitter and a light sensor. The light emitter includes a first electrode, a second electrode, and a first light emitting layer. The second electrode is light-transmissive. The first light emitting layer is provided between the first electrode and the second electrode. The light sensor includes a third electrode, a fourth electrode, a fifth electrode, a first photoelectric conversion layer, and a second photoelectric conversion layer. the fourth electrode is light-transmissive. The fifth electrode is provided between the third electrode and the fourth electrode. The fifth electrode is light-transmissive. The first photoelectric conversion layer is provided between the third electrode and the fifth electrode. The second photoelectric conversion layer is provided between the fourth electrode and the fifth electrode.

Growing community of inventors

Kawasaki, Japan

Toshiya Yonehara