Toyoda Gosei Co., Ltd.

Toshiya Umemura

Koichi Goshonoo

Ryohei Inazawa

Tomoharu Shiraki

Masahiro Ohashi

A method for producing a Group III nitride-based compound semiconductor device includes, before bonding a support substrate to an epitaxial layer formed on an epitaxial growth substrate, forming trenches in such a manner as to extend from the top surface of a stacked structure including the epitaxial layer to at least the interface between the epitaxial growth substrate and the bottom surface of the epitaxial layer. The trenches divide the epitaxial layer into extended device areas which encompass respective product device structures, and stress relaxation areas. A plurality of laser irradiations are performed for laser lift-off such that, after each laser irradiation, the expanded device areas and the stress relaxation areas are formed by a laser-irradiated area and a laser-unirradiated area, and a strip-shaped laser-unirradiated stress relaxation area is formed at a boundary between the laser-irradiated area and the laser-unirradiated area.

Method for producing group III nitride-based compound semiconductor device

Provided is a method for producing a Group III nitride-based compound semiconductor light-emitting device, wherein a contact electrode is formed on an N-polar surface of an n-type layer through annealing at 350&#xb0; C. or lower. In the case where, in a Group III nitride-based compound semiconductor device produced by the laser lift-off process, a contact electrode is formed, through annealing at 350&#xb0; C. or lower, on a micro embossment surface (i.e., a processed N-polar surface) of an n-type layer from vanadium, chromium, tungsten, nickel, platinum, niobium, or iron, when a pseudo-silicon-heavily-doped layer is formed on the micro embossment surface (i.e., N-polar surface) of the n-type layer through treatment with a plasma of a silicon-containing compound gas, and treatment with a fluoride-ion-containing chemical is not carried out, ohmic contact is obtained, and low resistance is attained.

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Aichi-ken, Japan

Toshiya Umemura