Fujitsu Corporation

Fujitsu Semiconductor Limited

Fujitsu Microelectronics Limited

Cypress Semiconductor Corporation

Spansion Llc.

Socionext Inc.

Toshiya Uchida

Yoshimasa Yagishita

Hiroyuki Kobayashi

Yasurou Matsuzaki

Tatsushi Otsuka

Shinnosuke Kamata

Masanori Kurita

Tatsuya Kanda

Ayako Sato

Tetsuo Miyamoto

Hidenaga Takahashi

Yoshinobu Yamamoto

Satoru Shirakawa

Hitoshi Ikeda

Shinya Fujioka

Takaaki Suzuki

Yasuharu Sato

Takahiko Sato

Masaki Okuda

Masao Taguchi

Hiroyoshi Tomita

Atsushi Hatakeyama

Masao Nakano

Kotoku Sato

Kota Hara

Shusaku Yamaguchi

Kazuyuki Kanazashi

Yoshihide Bando

Kaoru Mori

Kenichi Kawasaki

Yasuhiro Fujii

Tomohiro Kawakubo

Masafumi Yamazaki

Kazumi Kojima

Syusaku Yamaguchi

Yoshihiro Takemae

Masato Matsumiya

Naoharu Shinozaki

Hideyuki Kojima

Koichi Nishimura

Tadao Aikawa

Makoto Yanagisawa

Waichiro Fujieda

Akihiro Funyu

Takahiro Sawamura

Hiroko Douchi

Fusao Seki

Masahiro Yada

Kazuhiro Nunomiya

Hiromi Kanda

A semiconductor memory includes a sense amplifier which operates in response to activation of a sense amplifier enable signal and determines logic held in a nonvolatile memory cell according to a voltage of a bit line, the voltage varying with a cell current flowing through a real cell transistor, a replica cell transistor coupled in series between a first node and a ground line, and a timing generation unit. The timing generation unit activates the sense amplifier enable signal when the first node coupled to the ground line via the replica cell transistor changes from a high level to a low level. The replica cell transistor includes a control gate receiving a constant voltage and a floating gate coupled to the control gate. Thus, the activation timing of the sense amplifier can be optimally set in accordance with the electric characteristic of the memory cell.

Semiconductor memory read and write access

A semiconductor memory is provided which includes: a first pad; a second pad disposed adjacent to the first pad; a first output buffer coupled to the first pad; and a second output buffer coupled to the second pad. The first pad is coupled to the second pad by metal.

Semiconductor memory including switching circuit for selecting data supply

Semiconductor memory

Semiconductor memory including pads coupled to each other

Provided is a memory device in which the decrease of the effective bandwidth caused by the refresh operation of the memory device has been solved, a memory controller of the memory device, and a memory system thereof. A memory device that is operated in response to a command from a memory controller has a plurality of banks that respectively have memory cores including memory cell arrays and decoders and are selected by bank addresses; and a control circuit, which, in response to a background refresh command, causes the memory cores within refresh target banks set by the memory controller to successively execute refresh operation a number of times corresponding to refresh burst length that is set by the memory controller, and, in response to a normal operation command, further causes the memory cores within banks other than the refresh target banks and selected by the bank addresses to execute normal memory operation corresponding to the normal operation command, during the refresh operation executed by the memory cores within the refresh target banks.

Memory device, memory controller and memory system

An image memory, image memory system, and memory controller that are capable of efficiently accessing a rectangular area of two-dimensionally arrayed data are provided. The memory device has: a memory cell array that has a plurality of memory unit areas, each of which is selected by addresses; a plurality of input/output terminals; and an input/output unit provided between the memory cell array and the plurality of input/output terminals. Each of the memory unit areas stores therein data of a plurality of bytes or bits corresponding to the plurality of input/output terminals respectively, and the memory cell array and the input/output unit access a plurality of bytes or bits stored in a first memory unit area corresponding to the input address and in a second memory unit area adjacent to the first memory unit on the basis of the input address and combination information of the bytes or bits in response to a first operation code, and then, from the plurality of bytes or bits within the accessed first and second memory unit areas, associate a combination of the plurality of bytes or bits based on the combination information, with the plurality of input/output terminals.

The invention relates to a semiconductor memory device and a semiconductor integrated circuit system using the same and a control method of a semiconductor memory device. An object of the invention is to provide a semiconductor memory device which reduces the number of accesses to decrease the burden on a control unit and facilitates circuit board design, a semiconductor integrated circuit system using the same, and a control method of a semiconductor memory device. The semiconductor memory device is configured to have a data input unit to which input data is inputted from outside, a memory unit which stores data, an operation unit which processes a predetermined operation on input data and read data read out from the memory unit, and a data output unit which outputs operation result data obtained at the operation unit to the outside.

Semiconductor memory device, semiconductor integrated circuit system using the same, and control method of semiconductor memory device

In a semiconductor device constituted of stacked semiconductor chips, in order to independently test each of the chips, a second chip is disposed to face a first chip, with a second interconnection terminal thereof connected to a first interconnection terminal of the first chip. First and second external terminals of the first and second chips are formed on surfaces of the first and second chips, the surface being on a same side of the first and second chips. Therefore, even after the first chip and the second chip are pasted together, it is possible to test the first chip and the second chip while operating them independently. Further, since test probes or the like can be brought into contact with the external terminals of the first chip and the second chip from the same side, it is possible to simultaneously test the first chip and the second chip.

Semiconductor device comprising chip on chip structure

The memory device has: a plurality of banks, each of which has a memory cell array having a plurality of page areas that are selected by row addresses respectively, and each of which is selected by a bank address; a row controller that controls activation of the page areas within each of the banks in response to a first operation code; and a group of data input/output terminals. A memory unit area within each of the activated page areas is accessed based on the column address. The row controller generates bank activation signals for the plurality of banks in response to multi-bank information data and a supplied bank address that are supplied along with the first command, and generates the row address of each of the plurality of banks in response to the supplied bank address and a supplied row address. The plurality of banks activate the page areas in response to the bank activation signals and the row addresses generated by the row address calculator.

A semiconductor integrated circuit device has a boosted-voltage power-supply circuit generating a boosted voltage, an internal circuit being driven with the boosted voltage, and a control circuit controlling the internal circuit by receiving the boosted voltage. The boosted-voltage power-supply circuit has a first output terminal for the internal circuit, and a second output terminal for the control circuit. The boosted voltage output from the second terminal has a specified level regardless of variation in the boosted voltage being output from the first terminal.

Semiconductor integrated circuit device

A memory system includes a semiconductor memory having a plurality of banks; and a controller accessing the semiconductor memory. The number of the banks is larger than the number of banks simultaneously accessed. When receiving an access command for the bank currently executing the access operation, the semiconductor memory activates a busy signal and keeps the busy signal active until the access operation currently executed is completed. The controller stops outputting a next access command while receiving the activated busy signal. Based on the received busy signal, the controller judges whether or not the next access command should be outputted to the semiconductor memory. Consequently, it is possible to easily execute the random access in a semiconductor memory having a plurality of banks, without giving any load to the system side, which can improve the data transfer rate at the time of the random access.

Semiconductor memory, memory system, and operation method of memory system

Growing community of inventors

Kawasaki, Japan

Toshiya Uchida