Fujitsu Corporation

Kabushiki Kaisha Toshiba

Ricoh Company, Ltd.

Other

Winbond Electronics Corporation

Sanmina Corporation

Tokyo Electron Kabushiki Kaisha

Toshiya Suzuki

Jun Lin

Katsuhiko Hieda

Yutaka Matsumoto

Takayuki Ohba

Saori Iura

Nobuhiro Shindo

Michiaki Nishinosono

Daisuke Matsunaga

Seishi Murakami

Hiroki Ohzaki

Hiroshi Minakata

Chung-Ming Chu

Akihiro Shimada

Naofumi Nakamura

Noriyoshi Shimizu

Tomio Katata

Shinichi Iketani

Fumitake Mieno

Yukio Takigawa

Nobuhiro Misawa

Takae Sukegawa

Takeshi Yoshizumi

Naoto Yamashita

Atsuhiro Tsukune

Nobuyuki Nishikawa

Masatoshi Fukuda

Akio Yamaguchi

Muneyasu Miyamoto

Tatsushi Hara

Shimpei Jinnouchi

Hajime Kawabe

Yuji Uchiyama

A method for making an ultra-thin dielectric printed circuit board (PCB) is provided. A first side of a first conductive layer is removably coupled to a disposable base. A first ultra-thin dielectric layer and a second conductive layer are laminated to a second side of the first conductive layer, where the first ultra-thin dielectric layer is positioned between the first and second conductive layers, and the first ultra-thin dielectric layer is thinner than at least one of the first conductive layer and the second conductive layer. The second conductive layer may then be patterned to form electrical paths. The patterned second conductive layer is then filled with a dielectric filler. One or more conductive layers and one or more ultra-thin dielectric layers may then be coupled to the second conductive layer. The disposable base may then be detached from the first conductive layer.

Methods of manufacturing ultra thin dielectric printed circuit boards with thin laminates

An image forming apparatus for forming images by outputting plural image data in an order corresponding to an input order of plural input data is disclosed. The image forming apparatus includes a data receiving part for receiving the input data, a priority determining part for determining priority of outputting the input data, a PDL process part having plural PDL interpretation parts including at least first and second PDL interpretation parts for performing a PDL process on the input data, and a PDL control part for controlling each of the plural PDL interpretation parts, wherein when a subsequent input data is determined to have a priority higher than that of a prior input data in a case where the first PDL interpretation part is performing a first PDL process on the prior input data, the PDL control part is configured to stop the first PDL process and cause the second PDL interpretation part to perform a second PDL process on the subsequent input data.

Image forming apparatus conducting an interpretation operation

Image processing apparatus and method to perform an image processing job based on a received processing request, which includes a processing condition set by a user. Error protection is performed to detect a job setting error caused by a mismatching between the processing condition of the image processing job and a processing capability of the image processing apparatus. Error information relates to a previously detected air that is the job setting error previously detected. Error report conditions indicate whether the previously detected air has a same condition as the processing condition of the image processing job. Error information is managed to store information relating to the currently detected error when the currently detected error satisfies an error storage condition, determine whether the currently detected satisfies the error report condition and generate an error report to notify the user and an administrator when these conditions are satisfied.

Managing and utilizing error information relating to image processing

A printing apparatus receives a plurality of print jobs containing print data from a host computer connected thereto through a network. The printing apparatus temporarily stores the print job in a storage unit to print the print data. The printing apparatus receives a request to pause or restart printing of a print job, and controls execution of the print job in response to the request. Upon receiving a request to restart a print job being paused, the printing apparatus determines a printing order according to a predetermined condition to print the print job.

Printing apparatus and image forming apparatus

After an SiC film (), an SiOfilm () and a silicon nitride film () are formed sequentially on an organic low dielectric constant film (), by performing Oplasma processing to a surface of the silicon nitride film (), an oxide layer () is formed on the surface of the silicon nitride film (). Then, a wiring trench pattern is formed on the silicon nitride film () and the oxide layer (), and a resin layer () on which a via hole pattern is formed is formed. Subsequently, a portion of the oxide layer () exposed from the resin layer () is removed along with unnecessary particles.

Method for manufacturing semiconductor device

A method of manufacturing a semiconductor device, includes the steps of: (a) forming a first inter-level insulating film on a semiconductor substrate formed with semiconductor elements; (b) forming a contact hole through the first inter-level insulating film; (c) forming a plug made of conductive material capable of being nitrided, the plug being embedded in the contact hole; and (d) heating the semiconductor substrate in a nitriding atmosphere to nitride the plug from a surface thereof. This semiconductor device manufacture method can prevent breakdown of a plug when a capacitor is formed on the plug.

Semiconductor device with rare metal electrode

On a semiconductor substrate, a transistor and a capacitor electrically connected to the transistor are formed, the capacitor having two electrodes made of metal and a capacitor dielectric layer between the two electrodes made of oxide dielectric material. A temporary protective film is formed over the capacitor, the temporary protective film covering the capacitor. The semiconductor substrate with the temporary protective film is subjected to a heat treatment in a reducing atmosphere. The temporary protective film is removed. The semiconductor substrate with the temporary protective film removed is subjected to a heat treatment in an inert gas atmosphere or in a vacuum state. A protective film is formed over the capacitor, the protective film covering the capacitor. With these processes, leak current of the capacitor can be reduced.

Semiconductor device with transistor and capacitor and its manufacture method

A pseudorandom signal generator uses two pseudorandom signals having a small correlation with each other to generate a cross-correlation function of the two pseudorandom signals, and to output a value of the cross-correlation function as a new pseudorandom signal. As the new pseudorandom signal as a result has random phases and random amplitudes, many new pseudorandom signals can be generated by the two existing pseudorandom signals.

Method and apparatus for producing pseudorandom signal

Semiconductor device having a capacitor with rare metal electrode

A method for fabricating a capacitor comprises the steps of: forming a lower electrode of a metal over a substrate; forming a capacitor dielectric film of an oxide dielectric film on the lower electrode; depositing a metal film on the capacitor dielectric film; performing a thermal processing in a hydrogen-content atmosphere after the step of depositing the metal film; and patterning the metal film to form an upper electrode of the metal film after the step of performing the thermal processing. Thus, the adhesion between the upper electrode and the capacitor dielectric film is improved, and capacitor characteristics can be improved.

Capacitor

A method of manufacturing a semiconductor device has the steps of: (a) forming a lower electrode made of rare metal above a semiconductor substrate; (b) depositing a capacitor dielectric film made of a high dielectric material or ferroelectric oxide on the lower electrode; (c) forming a laminated layer on the capacitor dielectric film, the laminated layer including an upper electrode layer made of rare metal and an adhesive layer with or without an SiO mask layer thoreon; (d) patterning the laminated layer; (e) chemically processing the patterned, laminated layer to remove a surface layer of the laminated layer; and (f) forming an interlayer insulating film over the semiconductor substrate, covering the chemically processed, laminated layer. An adhesion force between the rare metal layer and insulating layer can be increased.

Semiconductor device and its manufacture

The method of forming a capacitor of a semiconductor device comprises the steps of forming a semiconductor film connected to a semiconductor substrate, forming a capacitor lower electrode made of a tungsten film selectively on a surface of the semiconductor film by causing a tungsten compound gas to react with the semiconductor film, forming a tungsten nitride film by nitriding a surface of the tungsten film by using a nitrogen gas or a nitrogen containing gas, forming a capacitor dielectric film made of oxygen compound on the tungsten nitride film, annealing the capacitor dielectric film in an oxygen containing gas, and forming a capacitor upper electrode made of a conductive film on the capacitor dielectric film.

Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device has the steps of: (a) forming a lower electrode made of rare metal above a semiconductor substrate; (b) depositing a capacitor dielectric film made of a high dielectric material or ferroelectric oxide on the lower electrode; (c) forming a laminated layer on the capacitor dielectric film, the laminated layer including an upper electrode layer made of rare metal and an adhesive layer with or without an SiO mask layer thereon; (d) patterning the laminated layer; (e) chemically processing the patterned, laminated layer to remove a surface layer of the laminated layer; and (f) forming an interlayer insulating film over the semiconductor substrate, covering the chemically processed, laminated layer. An adhesion force between the rare metal layer and insulating layer can be increased.

Growing community of inventors

Kawasaki, Japan

Toshiya Suzuki