National Institute of Advanced Industrial Science and Technology

Other

The Furukawa Electric Co., Ltd.

Agency of Industrial Science and Technology

The Japan Steel Works, Ltd.

Director-general of Agency of Industrial Science and Technology

Nec Corporation

Toshiya Kumagai

Tetsuo Tsuchiya

Takaaki Manabe

Susumu Mizuta

Mitsugu Sohma

Iwao Yamaguchi

Wakichi Kondo

Kenichi Tsukada

Yoshimi Kubo

Tsutomu Yoshitake

Yuichi Shimakawa

Masakazu Matsui

Takashi Ebisawa

Kengo Nakao

Akio Watanabe

Tomohiko Nakajima

Norio Matsui

Hajime Kasahara

Kunihiko Koyanagi

Naoto Edo

Hidehiko Ohtu

Akira Yabe

Seiji Kurashina

Shigemitsu Shin

Hiroyuki Niino

Kinjiro Fujii

Hiroshi Yokota

Masami Nishikawa

Kenji Kawaguchi

Wakichi Kondou

Yuriko Mizuta, Legal Representative

Toshihito Sasaki

Susumu Nakamura

Yoji Imai

Tsuyoshi Terayama

Tadao Shimizu

An oxide superconducting thin film includes a substrate, and an intermediate layer and a superconducting layer provided in this order on the substrate. The intermediate layer has an average thickness of from 10 nm to 20 nm and a surface roughness Ra of 0.5 nm or less. The superconducting layer is formed on a surface of the intermediate layer and includes an oxide superconductor as a main component. A superconducting fault current limiter including the oxide superconducting thin film is also provided.

Oxide superconductor thin film and superconducting fault current limiter

An oxide superconducting thin film includes a substrate having a single crystal structure, the main face of the substrate and a crystal face of the single crystal structure having an angle therebetween; an intermediate layer formed on the main face of the substrate and having an axis oriented in a direction perpendicular to the crystal face; and a superconducting layer formed on the intermediate layer and containing, as a main component, an oxide superconductor having a c-axis oriented in a direction perpendicular to the surface of the intermediate layer. A superconducting fault current limiter and a method of manufacturing an oxide superconducting thin film are also provided.

Oxide superconductor thin film, superconducting fault current limiter, and method for manufacturing oxide superconductor thin film

A method of producing a superconductive material involves the step (1) of applying a solution of an organic compound of metals and oxides of the metals forming a superconductive material, onto a support body to be subsequently dried, the provisional baking step (2) of causing organic components of the organic compound of the metals to undergo thermal decomposition, and the main baking process step (3) of causing transformation of the oxides of the metals into the superconductive material, thereby producing an epitaxially-grown superconductive coating material, wherein the support body is irradiated with the laser light during a period between the steps (1) and (2) from a surface of the support body, on the opposite side of the surface coated with the solution of the organic compound of the metals for forming the superconductive material.

Method of producing superconductive oxide material

Provided is a resistor film comprising vanadium oxide as a main component, wherein metal-to-insulator transition is indicated in the vicinity of room temperature in temperature variations of electric resistance, there is no hysteresis in a resistance change in response to temperature variations or the temperature width is small at less than 1.5K even if there is hysteresis, and highly accurate measurement can be provided when used in a bolometer. Upon producing the resistor film comprising vanadium oxide as a main component by treating a coating film of an organovanadium compound via laser irradiation or the like, a crystalline phase and a noncrystalline (amorphous) phase are caused to coexist in the resistor film.

Resistor film for bolometer

Provided is a coating solution where, upon producing a rare-earth superconductive composite metal oxide film by means of a coating-pyrolysis method, cracks are not generated in the heat treatment process for eliminating organic components, even when the thickness of the rare-earth superconductive film produced in a single coating is 500 nm or more, and without having to repeat the coating and annealing process. A solution for producing a rare-earth superconductive film which is made into a homogeneous solution by dissolving, in a solvent formed by adding a polyhydric alcohol to a univalent linear alcohol having a carbon number of 1 to 8 and/or water, a metal complex coordinated, relative to metal ions of a metallic species containing rare-earth elements, barium and copper, with pyridine and/or at least one type of tertiary amine, at least one type of carboxylic acid having a carbon number of 1 to 8, and, as needed, an acetylacetonato group.

Solution for forming rare-earth superconductive film and production method thereof

A method of producing a superconductive material involves the step (1) of applying a solution of an organic compound of metals, oxides of the metals forming a superconductive material, onto a support body to be subsequently dried, a provisional baking step (2) of causing organic components of the organic compound of the metals to undergo thermal decomposition, and a main baking process step (3) of causing transformation of the oxides of the metals into the superconductive material, thereby producing an epitaxially-grown superconductive coating material, wherein at the time of irradiation of a surface of the support body coated with the solution of the organic compound of the metals for forming the superconductive material, and/or of a surface of the support body, opposite to the surface coated with the solution of the organic compound of the metals, with the laser light, during a period between the steps (1) and (2).

An infrared sensor manufacturing method according to this invention includes a step of forming a bridge structure of an insulating material on an Si substrate, a step of forming a vanadium oxide thin film on the bridge structure by a dry film forming method, a step of irradiating laser light onto the vanadium oxide thin film to thereby change material properties thereof, a step of forming the vanadium oxide thin film with the changed material properties into a bolometer resistor having a predetermined pattern, and a step of forming a protective layer of an insulating material so as to cover the bolometer resistor having the predetermined pattern and the bridge structure.

Infrared sensor manufacturing method suitable for mass production

Provided is a manufacturing method of a crystallized rare-earth thin films on a glass or a silicon substrate. This manufacturing method of a crystallized metal oxide thin film includes a step of retaining an metal organic thin film or a metal oxide film containing at least one type of rare-earth metal element selected from a group comprised of Y, Dy, Sm, Gd, Ho, Eu, Tm, Tb, Er, Ce, Pr, Yb, La, Nd and Lu formed on a substrate at a temperature of 250 to 600&#xb0; C., and a step of crystallizing the organic metal thin film or the metal oxide film while irradiating ultraviolet radiation having a wavelength of 200 nm or less.

Manufacturing method and usage of crystallized metal oxide thin film

A metal complex composition containing complexes having metal species of a rare earth element, barium and copper and ligands of a trifluoroacetic acid or pentafluoropropionic acid ligand, a pyridine ligand and an acetylacetone ligand. A superconductive film may be obtained by applying an organic solvent solution of the above metal complex composition to a substrate and by heat treating the coating.

Rare earth-Ba-Cu complex composition and method of producing superconductor using same

In an infrared ray sensor for a bolometer, a bridge structure body, a resistive element film for the bolometer, and a protection film is formed via a space on a substrate, and is formed into a solution form by dissolving metal organic compound into solvent. The solution is applied and dried. A laser ray is irradiated for the solution with wavelength of 400 nm or less. A bond between carbon and oxygen is decomposed and cut to thereby form an oxide thin-film.

Method for manufacturing infrared ray sensor

An oxide for use in a bolometer with an oxide thin-film formed is manufactured on an insulating substrate. Metal organic compound is dissolved in solvent to form solution during manufacturing the oxide thin-film. The solution is applied on the insulating substrate, and the applied solution is dried. A bond between carbon and oxygen is cut and decomposed by irradiating a laser ray with wavelength of 400 nm or less. A generated oxide is crystallized.

Method of manufacturing oxide thin film for bolometer

There is disclosed a method for producing a metal oxide, which comprises the steps of: dissolving a metal organic compound (e.g. a metal organic acid salt, a metal acetylacetonato complex, and a metal alkoxide having an organic group with 6 or more carbon atoms) in a solvent to provide a state of solution, applying the solution onto a substrate, drying the solution, and subjecting the resultant substrate to irradiation with a laser light of a 400 nm or less wavelength, to form a metal oxide on the substrate. According to that method, a metal oxide can be produced without applying a heat treatment at a high temperature of the degree adopted in the conventionally known application thermal decomposition method.

Method for producing a metal oxide and method for forming a minute pattern

A process for forming a dense, epitaxial metal oxide film on a single crystal substrate, including cleaning the surface of the single crystal substrate, contacting the cleaned surface with a polar organic compound such as a small molecular weight alcohol, so that the cleaned surface adsorbs the polar organic compound, then applying a hydrocarbon solvent solution containing at least one organic group-containing metal compound on the polar organic compound-adsorbed surface, and then heating the substrate to decompose the organic group-containing metal compound and to form a dense epitaxial metal oxide film on the substrate.

Method for preparing dense, epitaxial metal oxide film

A superconductive material including a substrate and a superconductive layer of a double oxide of metals provided on the substrate is produced by a method which comprises the steps of:

Superconductive material and method of preparing same

A closed system for obtaining hydrogen from water is provided by combining a first step of obtaining hydrogen by reacting water and ferrous halide, a second step of converting triiron tetraoxide produced as a by-product in the first step to ferrous sulfate, a third step of obtaining oxygen and by-products by thermally decomposing said ferrous sulfate, and a fourth step of returning said by-products by thermally decomposing said ferrous sulfate, and a fourth step of returning said by-products obtained in the third step to any of the previous steps.

Growing community of inventors

Ibaraki, Japan

Toshiya Kumagai