Denso Corporation

Toshiya Ikezawa

Masaaki Tanaka

Takashige Saitou

Minoru Murata

Takashi Katsumata

Tomohito Kunda

Tetsuro Yano

A sensor device includes a circuit chip and a sensor chip. The circuit chip has a bonding portion. The sensor chip is stacked on the bonding portion of the circuit chip. The circuit chip and the sensor chip are bonded by a film-type adhesive containing 91 &#xb1;3 weight % of polyimide with no filler.

Sensor device

A sensor element () and sensor supporting body () are fixed on a jig () by adhesive () so that a surface (A) of the sensor element () and a surface (A) of the sensor supporting body () agree with each other. Therefore, it is possible to eliminate a step portion between the surface (A) of the sensor element () of the thermal-process-type air-flow-rate sensor and the surface (A) of the sensor supporting body (). Accordingly, it is possible to reduce fluctuations in the characteristic of the thermal-process-type air-flow sensor.

Thermal-process-type air-flow-rate sensor

A semiconductor dynamic sensor has a displacement portion, which is composed of a movable electrode and first and second fixed electrodes, formed in a semiconductor substrate. The movable electrode is displaced in response to applied acceleration, so that capacitance between the movable electrode and each of the first and second fixed electrodes changes. Therefore, the applied acceleration can be detected based on the capacitance change. A plurality of rectangular-shaped suction portions is provided at four corners on the surface of the semiconductor substrate. By sucking the suction portions using a collet check, the semiconductor dynamic sensor such can be transported without damaging the displacement portion.

Semiconductor dynamic sensor, and methods of transport and collet suction for the same

A flow rate detection device has a flow rate detection chip that is partially exposed to the flowing material to be measured and a casing that accommodates the flow rate detection chip. The casing has a bottom plate portion on which the flow rate detection chip is mounted, and a top plate portion that is disposed over the bottom plate portion and partially covers the flow rate detection chip. The space between the bottom plate portion and the top plate portion is filled with a sealant.

Flow rate detection device and method for manufacturing the same

A capacitive-type acceleration sensor includes a sensor chip that forms a moving electrode and a fixed electrode. The electrodes face each other while maintaining a detection gap. The sensor chip is joined to a circuit chip integrally. The circuit chip is mounted on a package via a resin adhesive. The adhesive is mixed with a filler of a material having a Young's modulus higher than that of the resin.

Capacitive-type acceleration sensor

A semiconductor dynamic quantity sensor includes a supporting portion, an adhesive, and a sensor chip. The adhesive is located on a surface of the supporting portion. The sensor chip is located on the adhesive. The sensor chip and the supporting portion have been bonded together by heating the adhesive. The adhesive has a deformation factor of 0.5% or smaller at the temperature at which the adhesive is heated for bonding the sensor chip and the supporting portion together in order to reduce the stress caused by the hardening shrinkage of the adhesive.

Semiconductor dynamic quantity sensor

A sensor device includes a circuit chip, an adhesion film, and a sensor chip mounted on the circuit chip through the adhesion film. The sensor chip includes a substrate having foreside and backside surfaces, a concavity disposed on the backside surface of the substrate, and a membrane disposed on the foreside surface of the substrate so that the membrane covers the concavity. The adhesion film is disposed between the sensor chip and the circuit chip so as to form a passage for connecting between the concavity and an outside of the concavity.

Sensor having membrane and method for manufacturing the same

A semiconductor dynamic sensor such as an acceleration sensor is composed of a sensor chip for detecting a dynamic force applied thereto and a circuit chip for processing output signals from the sensor chip. The sensor chip is supported on the circuit chip, and both chips are mounted on a package case. To suppress thermal stress transfer from the package case to the sensor chip through the circuit chip, an adhesive film having an elasticity modulus lower than 10 MPa is interposed between the circuit chip and the package case. Characteristics of the sensor chip are kept stable by suppressing the thermal stress transfer from the package case.

Semiconductor dynamic sensor having circuit chip mounted on package case with adhesive film interposed

An electronic device includes two microchips and a bonding layer with which the microchips are bonded together. The bonding layer is a silicone-type adhesive film, which has a glass transition temperature higher than &plus;120&deg; C. or lower than &minus;40&deg; C. Therefore, the influence of the variation in the elastic modulus of the bonding layer due to the glass transition on the electronic characteristic of one of the microchips is substantially eliminated in the temperature range between &minus;40&deg; C. and &plus;120&deg; C. Moreover, the elastic modulus in the temperature range between &minus;40&deg; C. and &plus;120&deg; C. is lowered. Therefore, the influence of a thermal stress in the one of the microchips on the electronic characteristic is suppressed.

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Kariya, Japan

Toshiya Ikezawa