Kao Corporation

Toshiya Hagihara

Yoshiaki Oshima

Akimitsu Sakai

Hiroki Sawada

Shigeo Fujii

Hiroyasu Togashi

Shoji Nakagawa

Yuichiro Kobayashi

Ryoichi Hashimoto

Hiroyuki Yoshida

Yasuhiro Yoneda

Hiroaki Kitayama

Kenichi Suenaga

Kazuhiko Nishimoto

Koji Taira

Yukinaga Yokota

Hiroshi Nagumo

Toshihiro Tanaka

Hideo Suzuki

Yuzo Yamamoto

Manabu Shibata

Jiro Hashimoto

Shuichi Inaya

Koichi Naito

A polishing composition comprising an abrasive and water, wherein the polishing composition has an index of degree of sedimentation of 80 or more and 100 or less; a process for producing a substrate comprising polishing a substrate to be polished using the above-mentioned composition; a process for preventing clogging of a polishing pad comprising applying the above-mentioned composition; a process for preventing clogging of a polishing pad comprising applying the above-mentioned composition to polishing with a polishing pad for a nickel-containing object to be polished; and a process for preventing clogging of a polishing pad comprising applying a composition comprising a hydrophilic polymer having two or more hydrophilic groups in its molecule and a molecular weight of 300 or more, or a compound capable of dissolving nickel hydroxide at a pH of 8.0, and water to polishing with a polishing pad for a nickel-containing object to be polished.

Polishing composition

A polishing liquid composition is applicable as a means of forming embedded metal interconnections on a semiconductor substrate. In a surface to be polished comprising an insulating layer and a metal interconnection layer, the polishing liquid composition is capable of maintaining a polishing speed of the metal layer, of suppressing an etching speed, and of preventing dishing of the metal layer.

Polishing liquid composition

A polishing composition for memory hard disk containing water and silica particles, wherein the silica particles have a particle size distribution in which the relationship of a particle size (R) and a cumulative volume frequency (V) in a graph of particle size-cumulative volume frequency obtained by plotting a cumulative volume frequency (%) of the silica particles counted from a small particle size side against a particle size (nm) of the silica particles in the range of particle sizes of from 40 to 100 nm satisfy the following formula (1): V&#x2267;0.5&#xd7;R+40 (1), wherein the particle size is determined by observation with a transmission electron microscope (TEM). The polishing composition of the present invention can be even more suitably used for the manufacture of a substrate for precision parts such as substrates for memory hard disks.

A polishing composition comprising an improver of a ratio of a polishing rate of an insulating film to that of a stopper film, wherein the polishing rate of the stopper film is selectively decreased, comprising one or more compounds selected from the group consisting of a monoamine or diamine compound; a polyamine having three or more amino groups in its molecule; an ether group-containing amine; and a heterocyclic compound having nitrogen atom. The polishing composition can be used for removing an insulating film which has been embedded for isolation into a trench formed on a silicon substrate and sedimented outside the trench, thereby planing a surface of the silicon substrate.

A roll-off reducing agent comprising one or more compounds selected from the group consisting of carboxylic acids having 2 to 20 carbon atoms having either OH group or groups or SH group or groups, monocarboxylic acids having 1 to 20 carbon atoms, and dicarboxylic acids having 2 to 3 carbon atoms, and salts thereof; and a roll-off reducing agent composition comprising a roll off-reducing agent comprising one or more compounds selected from the group consisting of carboxylic acids having 2 to 20 carbon atoms having either OH group or groups or SH group or groups, monocarboxylic acids having 1 to 20 carbon atoms, and dicarboxylic acids having 2 to 3 carbon atoms, and salts thereof; an abrasive; and water.

Roll-off reducing agent

A polishing composition comprising 0.03 to 0.5% by weight of an organic acid or a salt thereof, an abrasive and water, wherein the abrasive has a surface potential of from &#x2212;140 to 200 mV; a roll-off reducing agent comprising an inorganic compound having a property of controlling a surface potential of an abrasive in a polishing composition, wherein a surface potential of the abrasive in a standard polishing composition is controlled to &#x2212;110 to 250 mV by the presence of the inorganic compound, wherein the standard polishing composition is prepared which comprises 20 parts by weight of an abrasive, the abrasive being high-purity alumina having AlOpurity of 98.0% by weight or more composed of &#x3b1;-type corundum crystal, 1 part by weight of citric acid, 78 parts by weight of water and 1 part by weight of an inorganic compound. The polishing composition or the roll-off reducing agent composition can be favorably used in polishing the substrate for precision parts.

A polishing composition for a substrate for memory hard disk comprising water and silica particles, wherein the silica particles have a particle size distribution in which the relationship of a particle size (R) and a cumulative volume frequency (V) in a graph of particle size-cumulative volume frequency obtained by plotting a cumulative volume frequency (%) of the silica particles counted from a small particle size side against a particle size (nm) of the silica particles satisfies the above formula (1) and the above formula (2), and wherein a particle size at 90% of a cumulative volume frequency (D90) is within the range of 65 nm or more and less than 105 nm. By using the polishing composition of the present invention, there can be efficiently manufactured an Ni&#x2014;P plated substrate for a disk polished to have an excellent surface smoothness, in which the micropits are effectively reduced.

A method for manufacturing a substrate, a polishing process for a substrate, a method of reducing microwaviness for a substrate, each including the step of polishing a substrate to be polished with a polishing composition containing an abrasive and water with a polishing pad of which surface member has an average pore size of from 1 to 35 &#x3bc;m; and a method of reducing scratches for a substrate, comprising the step of polishing a substrate to be polished with a polishing composition comprising an abrasive, an oxidizing agent, an acid, a salt thereof, or a mixture thereof and water, with a polishing pad of which surface member has an average pore size of from 1 to 35 &#x3bc;m. The method for manufacturing a substrate can be used for finish polishing of a memory hard disk or for polishing of a semiconductor element.

Method for manufacturing substrate

A polishing composition comprising an abrasive, an acid and/or a salt thereof, and water, wherein copper (Cu) is contained in an amount of 1 mg or less per kg of the polishing composition; a process for reducing a surface defect of a substrate comprising applying to a substrate or a polishing pad a polishing composition comprising an abrasive, an acid and/or a salt thereof, and water, wherein copper (Cu) is contained in an amount of 1 mg or less per kg of the polishing composition fed to the substrate or the polishing pad; and a process for manufacturing a substrate comprising a polishing step comprising applying to a substrate or a polishing pad the above polishing composition. The polishing composition of the present invention is used for polishing a substrate for precision parts such as substrates for magnetic recording media such as magnetic disks, optical disks, opto-magnetic disks, and the like; photomask substrates, optical lenses, optical mirrors, optical prisms and semiconductor substrates, concretely polishing a substrate for memory hard disks, and especially finish polishing.

A polishing composition for a substrate for memory hard disk, comprising silica particles in an aqueous medium, wherein the silica particles satisfy a specified relationship between an average particle size of the silica particles on the number basis and a standard deviation on the number basis, wherein the average particle size is obtained by a determination by transmission electron microscope (TEM) observation, and wherein a particle size and a cumulative volume frequency in a range of particle sizes of from 60 to 120 nm satisfies a specified relationship; a method of reducing microwaviness of a substrate for memory hard disk, comprising the step of polishing the substrate for memory hard disk with the polishing composition; and a method for manufacturing a substrate for memory hard disk, comprising the step of polishing a Ni&#x2014;P plated substrate for memory hard disk with the polishing composition. The method can be suitably used for the manufacture of a substrate for precision parts, such as a substrate for memory hard disk.

A polishing composition comprising an abrasive, water and an organic acid or a salt thereof, wherein the composition has a specified viscosity of from 1.0 to 2.0 mPa&#xb7;s at a shearing rate of 1500 sand 25&#xb0; C.; a roll-off reducing agent comprising a Br&#xf6;nsted acid or a salt thereof, having an action of lowering viscosity so that the amount of viscosity lowered is 0.01 mPa&#xb7;s or more, wherein the amount of viscosity lowered is expressed by the following equation:(Amount of Viscosity Lowered)=(Viscosity of Standard Polishing Composition)&#x2212;(Viscosity of Roll-Off Reducing Agent-Containing Polishing Composition),wherein the standard polishing composition is prepared which comprises 20 parts by weight of an abrasive, said abrasive being high-purity alumina having AlOpurity of 98.0% by weight or more composed of &#x3b1;-type co-random crystal, 1 part by weight of citric acid, and 79 parts by weight of water; the roll-off reducing agent-containing polishing composition is prepared which comprises 20 parts by weight of an abrasive, said abrasive being high-purity alumina having AlOpurity of 98.0% by weight or more composed of &#x3b1;-type co-random crystal, 1 part by weight of citric acid, 78.9 parts by weight of water and 0.1 parts by weight of a roll-off reducing agent; and the viscosity is a viscosity at a shearing rate of 1500 sand 25&#xb0; C. The polishing composition can be favorably used in polishing the substrate for precision parts.

A polishing composition comprising an abrasive having an average primary particle size of 200 nm or less, an oxidizing agent, an acid having a pK1 of 2 or less and/or a salt thereof, and water, wherein the acid value (Y) of the polishing composition is 20 mg KOH/g or less and 0.2 mg KOH/g or more; a process for reducing fine scratches of a substrate, comprising polishing a substrate to be polished with the above-mentioned polishing composition; and a method for manufacturing a substrate, comprising polishing a substrate to be polished with the above-mentioned polishing composition. The polishing composition can be suitably used for final polishing memory hard disk substrates and polishing semiconductor elements.

A polishing composition comprising silica particles, water, and Fe salt and/or Al salt of a polyaminocarboxylic acid; a polishing process comprising applying the polishing composition; a process for manufacturing a magnetic disk substrate, comprising the step of polishing a substrate with the polishing composition; a magnetic disk substrate manufactured by applying the polishing composition.

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Wakayama, Japan

Toshiya Hagihara