Hitachi, Ltd.

Hitachi Vlsi Engineering Corp.

Toshitugu Takekuma

Hiroyuki Uchiyama

Ryoichi Hori

Yasushi Takahashi

Kazuyuki Miyazawa

Masamichi Ishihara

Hisashi Nakamura

Hidetoshi Iwai

Masaya Muranaka

Satoshi Oguchi

Hiromi Matsuura

Yoshihisa Koyama

Hidetomo Aoyagi

Shigetoshi Sakomura

Haruo Ii

Takeshi Kizaki

A semiconductor memory device is provided which includes a substrate arrangement which is suitable for forming a large number of types of DRAMs having different package specifications, different bit structure and different operating modes. In conjunction with this, the bonding pads are arranged at optimum locations for accommodating the different package types. Various layout arrangements are also provided to minimize space and to improve access time. Additional features are provided, including improved output buffer circuitry, protection circuitry and testing methods to facilitate operation of the semiconductor memory device.

Semiconductor memory device with improved substrate arrangement to

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Ohme, Japan

Toshitugu Takekuma