Canon Kabushiki Kaisha

Canon Kabushiki Kaisha Toshitama Hara

Toshitami Hara

Yoshiaki Shirato

Yasushi Takatori

Yukuo Nishimura

Michiko Takahashi

Hidetoshi Nojiri

Yoshinobu Sekiguchi

Seiichi Miyazawa

Akira Shimizu

Yasushi Sato

Isao Hakamada

Yoshioki Hajimoto

Akihiko Yamano

Kazuya Miyazaki

Hisanori Tsuda

Akira Shinmi

Masahisa Fukui

Shinichi Hirasawa

Michiko Tanaka

Masahiro Haruta

Mitsutoshi Hasegawa

Hideaki Sato

Nobuhiro Ito

Yasuhiro Yano

Sotomitsu Ikeda

Shigeyuki Matsumoto

Takeshi Miyachi

Matsutaka Maeda

Masaaki Matsushima

Tomohiro Saito

Asao Watanabe

Mamo Matsumoto

Sadasuke Kurahayashi

Yukio Kasugayama

Massaki Matsushima

Yashushi Sato

A joined unit of glass base members is provided, comprising first and second glass base members and a joining member which extends along opposing surfaces of the first and second glass base members, wherein glass base member is elastically deformed while being depressed in an internal direction of the glass base member in the vicinity of an end portion in a widthwise direction of the joining member, a boundary surface between the elastically deformed glass base member and the joining member and a surface of the elastically deformed glass base member, which are disposed in the vicinity of the end portion in the widthwise direction of the joining member, are positioned on an internal side of the glass base member, and an area, in which a residual stress is a compressive stress, is formed in the vicinity of the end portion in the widthwise direction of the joining member.

Joined unit of glass base members, and airtight envelope

An electron emission apparatus can effectively suppress the adverse effect of electric discharges that can take place between the oppositely disposed electrodes of the apparatus to which a high voltage is applied by dividing the electrode adapted to have a higher electric potential into segments in order to reduce the electrostatic capacitance between the electrodes. In the case of an electron emission apparatus comprising electron-emitting devices, said plurality of electron-emitting devices are disposed such that the direction along which those that can be driven simultaneously are arranged is not parallel with the direction along which the electrode is divided into the electrode segments in order to reduce the variable range of the electric current that can flow in the segments.

Electron emission apparatus comprising electron-emitting devices, image-forming apparatus and voltage application apparatus for applying voltage between electrodes

Electron emission apparatus comprising electron-emitting devices, image forming apparatus and voltage application apparatus for applying voltage between electrodes

An ink jet recording method includes the steps of providing an ink jet recording head having a plurality of discharge openings for discharging ink, a plurality of liquid passageways for holding ink and a plurality of heat generating members. Each of the heat generating members corresponds to a liquid passageway and each heat generating member has a pair of electrodes for driving the heat generating member individually and the electrodes and corresponding heat generating member form a U-shaped wiring portion. The recording head may be manufactured using a cutting process. A voltage is applied to selected pairs of electrodes for driving selected heat generating members individually for providing thermal energy to the ink in the liquid passageway for abruptly forming a bubble and discharging ink from the discharge opening and recording on a recording medium.

Ink jet recording apparatus and method using ink jet head having u-shaped wiring

An electron emission apparatus effectively suppresses the adverse effect of electric discharges that can take place between the oppositely disposed electrodes of the apparatus to which a high voltage is applied by dividing the electrode adapted to have a higher electric potential into segments in order to reduce the electrostatic capacitance between the electrodes. In the case of an electron emission apparatus comprising electron-emitting devices, a plurality of electron-emitting devices are disposed such that the direction along which those that can be driven simultaneously are arranged is not parallel with the direction along which the electrode is divided into the electrode segments in order to reduce the variable range of the electric current that can flow in the segments.

Ink jet recording apparatus and method using ink jet head having

An ink jet recording head comprising a plurality of discharge openings for discharging ink, a plurality of liquid passageways for holding ink and a plurality of heat generating members. Each of the heat generating members corresponds to a liquid passageway for providing thermal energy to the ink in the liquid passageway for abruptly forming a bubble for discharging ink from the discharge opening. Each heat generating member has a pair of electrodes for driving the heat generating member individually and the electrodes and corresponding heat generating member form a U-shaped wiring portion. The recording head may be manufactured using a cutting process.

Ink jet recording head formed by cutting process

An apparatus for liquid-jet recording comprises an electro-thermal transducer and discharge openings for jetting a liquid by thermal action of the electrothermal transducer. The electro-thermal transducer is connected directly to a lower potential side of a power source and is connected to a higher potential side of the power source through a switch element. Thermal action of the thermal transducer occurs upon the application of a positive voltage of a high potential from the power source through the switch element.

Liquid jet recording method and apparatus having electro-thermal

In a multibeam emitting device provided with a plurality of semiconductive light-emitting elements monolithically formed on a semiconductor substrate, the semiconductor light-emitting elements are formed so that the directions of emission of the lights emitted from the elements differ from one another.

Multibeam emitting device

A semiconductor laser device wherein a depletion layer is formed in a laser activation layer by biasing the laser device and a third terminal controls an injection current flowing between first and second terminals of the device.

Semiconductor laser device having a semiconductor region for creating a

A semiconductor laser array includes plural semiconductor laser elements each emitting light from two end faces constituting resonant planes and monolithically formed on a semiconductor substrate, in which the mutual angle of the beams emerging from one end of semiconductor lasers is different from that from the other end and in which the beam angle is selected as a non-zero finite value at least one end.

Semiconductor laser array

A semiconductor device having a plurality of laminated semiconductor layers in which a current flows in the direction of lamination. A superlattice layer is formed in at least one of the layers and the potential of the quantum well of the superlattice layer is lower than the potential of the semiconductor layer in which the superlattice layer is formed. The potential of the barrier of the superlattice layer is higher than the potential of the semiconductor layer in which said superlattice layer is formed.

Semiconductor device having a superlattice structure

There is disclosed a semiconductor laser having a super lattice structure near an active layer, in which the super lattice structure consists of at least two types of materials which have different bandgaps, the materials are regularly and alternately arranged, and thickness of adjacent layers of the materials change such that a ratio of the thicknesses changes within the super lattice structure toward an active layer.

Semiconductor laser having superlattice structure

A semiconductor laser comprises a plurality of lasers provided in the form of an array, the lasers being monolithically formed, a plurality of photodetector elements being monolithically formed, a plurality of first separating portions for separating the lasers and the photodetector elements from each other, and at least one second separating portion for separating the plurality of lasers from one another and the plurality of photodetector elements from one another.

Semiconductor laser provided with a plurality of lasers in the form of

A semiconductor laser apparatus comprising a plurality of laser elements comprising an array, a plurality of photodetector elements respectively corresponding to the plurality of laser elements, and a light shield member. Each laser element is adapted to generate a laser beam in two directions. Each photodetector element is adapted to receive a laser beam from a laser element. The light shield member prevents the light generated by each of the plurality of laser elements from entering photodetectors other than those to which they correspond.

Semiconductor laser apparatus

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Tokyo, Japan

Toshitami Hara