Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Toshitaka Shimamoto

Yoshiaki Hasegawa

Akihiko Ishibashi

Gaku Sugahara

Toshiya Yokogawa

Isao Kidoguchi

Kiyoshi Ohnaka

Nobuyuki Otsuka

Ryoko Miyanaga

Yuzaburo Ban

Ayumu Tsujimura

Kenji Harafuji

Yasutoshi Kawaguchi

A nitride semiconductor device according to the present invention includes a p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer. The p-type nitride semiconductor layer includes: a first p-type nitride semiconductor layer containing Al and Mg; and a second p-type nitride semiconductor layer containing Mg. The first p-type nitride semiconductor layer is located between the active layer and the second p-type nitride semiconductor layer, and the second p-type nitride semiconductor layer has a greater band gap than a band gap of the first p-type nitride semiconductor layer.

Nitride semiconductor device and production method thereof

A process for producing a nitride semiconductor according to the present invention includes: step (A) of provided an n-GaN substrate; step (B) of forming on the substratea plurality of stripe ridges having upper faces which are parallel to a principal face of the substrate; step (C) of selectively growing AlGaInN crystals (0&#x2266;x, y, z&#x2266;1: x+y+z=1)on the upper faces of the plurality of stripe ridges, the AlGaInN crystals containing an n-type impurity at a first concentration; and step (D) of growing an AlGaInN crystal (0&#x2266;x', y&#x2032;, z&#x2032;&#x2266;1:x&#x2032;+y&#x2032;+z&#x2032;=1)on the AlGaInN crystals, the AlGaInN crystalcontaining an n-type impurity at a second concentration which is lower than the first concentration, and linking every two adjoining AlGaInN crystalswith the AlGaInN crystalto form one nitride semiconductor layer

Nitride semiconductor device and process for producing the same

A nitride-based semiconductor device according to the present invention includes a semiconductor multilayer structure supported on a substrate structurewith electrical conductivity. The principal surface of the substrate structurehas at least one vertical growth region, which functions as a seed crystal for growing a nitride-based semiconductor vertically, and a plurality of lateral growth regions for allowing the nitride-based semiconductor that has grown on the vertical growth region to grow laterally. The sum &#x3a3;X of the respective sizes of the vertical growth regions as measured in the direction pointed by the arrow A and the sum &#x3a3;Y of the respective sizes of the lateral growth regions as measured in the same direction satisfy the inequality &#x3a3;X/&#x3a3;Y&#x3e;1.0.

Nitride-based semiconductor device and method for fabricating the same

The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.

Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device

A method for fabricating a semiconductor light emitting device, the method comprising the steps of: repeatedly forming, on a first nitride based Group III&#x2013;V compound semiconductor layer, stripe-shaped masking films in a predetermined cycle in a width-wise direction thereof, each masking film comprising first width sections having a predetermined width and second width sections which are adjacent to both ends of each first width section and have a greater width than the predetermined width; selectively growing a second nitride based Group III&#x2013;V compound semiconductor layer from exposed parts of a surface of the first nitride based Group III&#x2013;V compound semiconductor so as to cover the masking films and the exposed parts, each of the exposed parts being located between the masking films; and layering a semiconductor laser structure on the second nitride based Group III&#x2013;V compound semiconductor layer, the semiconductor laser structure including an active layer which substantially extends in a length-wise direction of the masking films and level difference portions which extend in the width-wise direction by a structure in which a portion located above the second width sections is lower than a portion located above the first width sections.

Method for fabricating semiconductor light emitting device

A method for fabricating a semiconductor light emitting device, the method comprising the steps of: repeatedly forming, on a first nitride based Group III-V compound semiconductor layer, stripe-shaped masking films in a predetermined cycle in a width-wise direction thereof, each masking film comprising first width sections having a predetermined width and second width sections which are adjacent to both ends of each first width section and have a greater width than the predetermined width; selectively growing a second nitride based Group III-V compound semiconductor layer from exposed parts of a surface of the first nitride based Group III-V compound semiconductor so as to cover the masking films and the exposed parts, each of the exposed parts being located between the masking films; and layering a semiconductor laser structure on the second nitride based Group III-V compound semiconductor layer, the semiconductor laser structure including an active layer which substantially extends in a length-wise direction of the masking films and level difference portions which extend in the width-wise direction by a structure in which a portion located above the second width sections is lower than a portion located above the first width sections.

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Osaka, Japan

Toshitaka Shimamoto