Sanken Electric Co., Ltd.

Toshitaka Shiga

Ryuichi Furukoshi

A power semiconductor chip (first semiconductor chip)is mounted on the main surface of a first radiator plate, and a control IC chip (second semiconductor chip)is mounted on the main surface of a second radiator plate. The first radiator platehas an extending portionA extending toward the side on which the second radiator plateis provided in the arrangement direction of first lead terminals (lead terminalsto). The first lead terminals (lead terminalsto) are connected to a first side of the first radiator plateto function as extraction electrodes of a rear side electrode (D: drain electrode) of the power semiconductor chip. A second lead terminal (lead terminal) is connected to a bonding padserving as a source electrode (S). The third lead terminals (lead terminalsto) are connected to an electrode of the control IC chip

Semiconductor device

A power converter is provided which comprises two main MOS-FETsconnected in series to a DC power source; an oscillatorwhich has two capacitorsconnected in parallel to main MOS-FETs; a primary windingof a transformerconnected between a junction of two main MOS-FETsand a junction of two capacitors; an electricity controllerwhich comprises first and second regulatory MOS-FETsconnected between respectively one and the other ends of a secondary windingof transformerand a speaker; a polarity detectorfor detecting the polarity of AC voltage produced on secondary windingof transformerby the on and off operation of MOS-FETsto generate detection signals; and a drive circuitfor receiving detection signals from polarity detectorto control the on and off operation of first and second regulatory MOS-FETsto simplify the circuit configuration and improve power conversion efficiency in the power converter.

Growing community of inventors

Niiza, Japan

Toshitaka Shiga