Fujitsu Corporation

Fujitsu Semiconductor Limited

Fujitsu Microelectronics Limited

Toshitaka Mizuguchi

Jun Funakoshi

Katsuyoshi Yamamoto

Tsuyoshi Higuchi

Seiji Yamagata

Katsuyosi Yamamoto

Hiroshi Kobayashi

Chikara Tsuchiya

Masatoshi Kokubun

Tadao Inoue

Makoto Yanagisawa

Asao Kokubo

Iwao Sugiyama

Koji Fujiwara

Hiroshi Takakusagi

A solid-state image pickup device and image pickup method eliminate a dark-current component by adjusting the black level appropriately even if the dark-current component varies among horizontal lines. A pixel array includes light-receiving pixel elements and light-blocking pixel elements disposed such that horizontal lines include the light-blocking pixel elements individually. A readout circuit block reads pixel signals of each of the horizontal lines from the pixel array, inputs the pixel signals to ADC circuits (column ADC circuit block), and outputs the pixel signals of the light-blocking pixel elements. A ramp signal generation circuit obtains the pixel signals of the light-blocking pixel elements output from the readout circuit block, generates a ramp signal by using a reference level of AD conversion adjusted for each of the horizontal lines in accordance with the obtained pixel signals of the light-blocking pixel elements, and inputs the ramp signal to the ADC circuits.

Solid-state image pickup device and image pickup method

A solid-state image pickup device having a reduced signal transfer time and a signal processing method using the solid-state image pickup device. A pixel array includes a plurality of light-receiving pixel elements and a plurality of light-blocked pixel elements. A read block reads the output signals of the plurality of light-blocked pixel elements. An AD conversion processing block includes a circuit for summing up the output signals of adjacent light-blocked pixel elements and transferring the signals of the light-blocked pixel elements in a reduced period.

Solid-state image pickup device and signal processing method using solid-state image pickup device

A solid-state imaging device has a substrate in which are formed a pixel array portion having a plurality of pixels, and a peripheral circuitry portion. The device is characterized in that a first multilevel metallization structure is formed over the peripheral circuitry portion, and a second multilevel metallization structure thinner than the first multilevel metallization structure is formed over the pixel array portion.

Solid-state imaging device

A differential amplifier has a first input terminal to which a voltage of a noise signal of the solid-state imaging device is supplied and a second input terminal to which a voltage of a temporary data signal having the noise signal of the solid-state imaging device superposed thereon is supplied. The differential amplifier inverts an output signal when a magnitude relationship in voltage between the first and second input terminals becomes reverse. A measurement circuit measures a variation amount of a voltage of the second input terminal from when the voltage of the second input terminal begins to vary in a direction to reverse the magnitude relationship to when the output signal of the differential amplifier is inverted, and outputs a measurement result as a digital value indicating a voltage of a real data signal obtained by removing the noise signal from the temporary data signal.

Data read circuit of solid-state imaging device, imaging apparatus, and data read method for solid-state imaging device

An imaging device provided with a read circuit in which a light-shielding region is formed in a part of an image region where a plurality of optical/electrical conversion devices is two-dimensionally arrayed in the row and column directions and which converts a optically detected signal outputted from each of the optical/electrical conversion devices for each of the column into a digital signal, comprises a storage device for storing the outputted digital signal outputted in relation with the optical/electrical conversion device in the light-shielding region and a difference calculation device for calculating a difference between the outputted digital signal in relation with the optical/electrical conversion device in a light-receiving region except the light-shielding region and a value stored in the storage device.

Imaging device with light-shielding region, control method thereof and CMOS image sensor with light-shielding region

A second source follower circuit of a reference voltage generator includes a transistor having the same characteristics as a first source follower circuit of a pixel. Accordingly, the second source follower circuit can generate a second reference voltage according to the change in characteristics of the first source follower circuit. A noise voltage switching circuit outputs a first voltage as a noise voltage to a pixel signal generator when the noise voltage is equal to or lower than the second reference voltage. In a reset state, the noise voltage and the second reference voltage always have a predetermined voltage difference. Therefore, deterioration in image quality can be prevented even when capturing a subject having high brightness. Since a trimming circuit or the like selecting any one of a plurality of reference voltages according to characteristics of a formed transistor becomes unnecessary, the cost of an imaging device can be reduced.

Imaging device

A method for controlling a solid-state imaging apparatus, which includes a plurality of pixels, includes selecting a resetting element of one of the pixels, resetting a detecting unit connected to the pixel, transmitting to a detecting unit, an electric charge accumulated after photoelectric conversion performed by a photoelectric converting element of the pixel, and providing control to set a second end of a transmitting control signal line to an open state.

Solid-state imaging apparatus and control method with transmission control hold circuit

An image sensor includes: a pixel unit that outputs a first signal including an offset voltage inherent to a pixel; a CDS unit that performs correlated double sampling of a second signal that is obtained from the first signal by canceling the offset voltage inherent to the pixel, and outputs the second signal after the correlated double sampling as a third signal including an offset voltage due to the CDS unit; and an ADC unit that performs analog-to-digital conversion of a fourth signal that is obtained from the third signal by canceling the offset voltage due to the CDS unit.

Image sensor capable of cancelling offset voltage of semiconductor device included therein

A circuit for stabilizing an electric current includes a constant voltage supplying circuit configured to supply a constant voltage, and a current generating circuit coupled to the constant voltage supplying circuit to generate an electric current based on a predetermined voltage responsive to the constant voltage and to adjust a current amount of the electric current to a predetermined amount by feedback control based on comparison of the predetermined voltage with a voltage appearing across a predetermined resistance responsive to the electric current.

Current stabilization circuit, current stabilization method, and solid-state imaging apparatus

An image sensor for capturing image, has: a plurality of pixels arranged in a matrix each including a photoelectric conversion element for generating current according to received light intensity and a reset transistor for resetting a node of the photoelectric conversion element to a reset potential; and a sample hold circuit for sample holding a pixel potential according to the potential of the node of the pixel. And the sample hold circuit outputs the differential potential, between a first pixel potential at an end of the integration period after a first reset operation of the pixel and a second pixel potential at an end of a reset noise read period after a second reset operation after the integration period, as a pixel signal. Also in the sample hold circuit, when the second pixel potential during the reset noise read period exceeds a predetermined threshold level, the second pixel potential is set to a predetermined reference potential.

Image sensor providing improved image quality

A differential comparator which outputs positive and/or negative logic signals to an output terminal according to the coincidence/non-coincidence of first and second input signal levels inputted to first and second input terminals, respectively, comprises an offset cancel function composed of an offset capacitor device provided on the differential comparator side of the first and second terminals, a first switch for short-circuiting the first and second input terminals in such a way as to form a closed loop including the offset capacitor device, and a second switch for short-circuiting both the connection point between the offset capacitor device and the differential comparator, and the output terminal.

Differential comparator, analog/digital conversion apparatus and imaging apparatus

A ramp waveform generation circuit which comprises a first reference power supply, and supplies a ramp waveform signal to an analog/digital conversion circuit further comprises a connection circuit for reflecting the amount of fluctuation of the output potential of a second reference power supply which is installed in a noise elimination circuit for eliminating the noise of an analog signal inputted to the analog/digital conversion circuit in the output potential of the first reference power supply.

Ramp waveform generation circuit, analog/digital conversion circuit, imaging device and control method of imaging device

An image sensor, includes: a plurality of pixel circuits, each of which comprises a photoelectric conversion element, a first transistor controlled by a detection signal generated by the photoelectric conversion element, and a second transistor connected to the first transistor and controlled by a select line; and a common amplifier circuit, which is provided commonly to the plurality of pixel circuits, and which has a third transistor connected in parallel to the first transistor, and a current circuit for supplying current to the first and third transistors, wherein an amplifying circuit, which amplifies the detection signal, is formed by the first transistor in a pixel circuit selected by the select line, and by the third transistor in th common amplifier circuit.

CMOS image sensor permitting increased light sensitivity from amplification of pixel detection signals

An A/D converter includes a plurality of comparators, each of which samples an analog input potential during a first period, and compares the analog input potential with a reference potential during a second period, an encoder which encodes comparison results obtained by the comparators, and a control signal supply unit which generates one or more control signals that define the first period and the second period such as to make a duration of the first period different from a duration of the send period, and supplies the one or more control signals to the plurality of comparators.

A/D converter with reduced power consumption

A solid state imaging device includes a semiconductor substrate, a light receiving section which is provided in a surface of the semiconductor substrate, and includes an array of pixels that accumulate electric charge through photoelectric conversion of incoming light, a light shielding section which includes an array of pixels formed in the surface of the semiconductor substrate and shielded from light, and a drain which is situated between the light receiving section and the light shielding section, and is formed to a depth deeper in the semiconductor substrate than the light receiving section and the light shielding section.

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Kawasaki, Japan

Toshitaka Mizuguchi