Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Toshitaka Akahoshi

Fumito Itou

Takashi Yui

Yoshiyuki Arai

Yasutake Yaguchi

Shigefumi Dohi

Toshiyuki Fukuda

Hiroki Yamashita

Hisaki Fujitani

Manabu Usuda

Masato Kobayashi

A laminated semiconductor device includes: a first semiconductor element provided with a photoelectric conversion region on its main surface; an extended portion extended outwardly from a side end surface of the first semiconductor element; a redistribution layer formed on a first surface of the extended portion; a second semiconductor element provided on the main surface of the first semiconductor element so as to extend to the extended portion from an outside of the photoelectric conversion region, the second semiconductor element being electrically connected to the first semiconductor element and the redistribution layer; and a first electrode pad formed on the redistribution layer and electrically connected to the second semiconductor element via the redistribution layer.

Laminated semiconductor device

A light receiving device includes: a photoelectric converter including a photodiode and a first pixel electrode disposed on a lower surface of the photodiode; a scanning circuit connected to the first pixel electrode; an electrode pad disposed on a periphery of the scanning circuit; a transparent conductive film extending from an upper surface of the photodiode to the electrode pad, the transparent conductive film having an inclination relative to the upper surface of the photodiode, between the photodiode and the electrode pad; and a sealing resin filled in a space between the photoelectric converter and the scanning circuit, and in a space under the transparent conductive film around the photoelectric converter.

Light receiving device

A downsized, highly reliable optical apparatus is stably and easily manufactured with high productivity. The optical apparatus includes: an optical device having a principal surface including an optical unit; a transparent member disposed facing the optical unit; a semiconductor device disposed above a back surface of the optical device and electrically connected to the optical device, the back surface being opposite the principal surface; and a resin member provided in a region adjacent to the optical device and the semiconductor device above a surface of the transparent member, the surface of the transparent member facing the optical device.

Optical apparatus having resin encased stacked optical and semiconductor devices

A stacked chip semiconductor device including: a substrate having electrode pads; a first semiconductor chip that is flip-chip-packaged on the substrate via a first adhesive layer; a second semiconductor chip that is mounted on an upper part of the first semiconductor chip and that has electrode pads; wires for electrically connecting the electrode pads of the second semiconductor chip and the electrode pads of the substrate; and a molded resin for encapsulating the first semiconductor chip, the second semiconductor chip and the wires, the first adhesive layer forming a fillet at the periphery of the first semiconductor chip. The first semiconductor chip is disposed with its central axis being offset from a central axis of the substrate, the offset being provided so that the first semiconductor chip is shifted toward a side opposite to a side where the fillet has a maximum length from the periphery of the first semiconductor chip. Thereby, influences of the fillet made of the adhesive are suppressed, allowing miniaturization of the device and improvement in the mass-productivity.

Stacked chip semiconductor device and method for manufacturing the same

A first semiconductor element and second semiconductor element are bonded via die-bonding material. A first electrode of the first semiconductor element and a third electrode are joined, by means of flip-chip bonding, to a semiconductor carrier that has the third electrode on the one face of the semiconductor carrier and a fourth electrode on the perimeter of the other face of the semiconductor carrier. The bonding pad of the second semiconductor element and the fourth electrode of the semiconductor carrier are connected via fine metal wire by means of wire bonding. The periphery of the first semiconductor element and the wiring portion of the fine metal wire are filled with insulating sealing resin between the semiconductor carrier and second semiconductor element and the sealing fill region for the sealing resin is formed substantially the same as the external dimensions of the second semiconductor element.

Growing community of inventors

Takatsuki, Japan

Toshitaka Akahoshi