Fujitsu Corporation

Toshisuke Kitakohji

Yasuhiro Yoneda

Kenro Kitamura

Shigeru Fukushima

Tsutomu Iikawa

Takashi Furusawa

Shiori Yamazaki

Michiko Satoh

Teruo Motoyoshi

Masao Nakayama

Yasuo Udoh

Mayumi Itabashi

Eiichi Nakajima

Jiro Naito

Shiro Takeda

Hiroshi Tokunaga

Minoru Nakajima

Kenroh Kitamura

When adsorbed gas is analyzed after metal, ceramics or metallic salt has been left in an environmental atmosphere for a predetermined period of time, an average concentration of specific gas over a long period of time can be accurately measured with an inexpensive small apparatus. Especially, porous metal or ceramics (transition metal oxide) are excellent in selective adsorption properties for NO.sub.x, porous ceramics (rare earth element oxide) are excellent in selective adsorption properties for CO.sub.2, and a specific chloride such as copper chloride and silver chloride is excellent in selective adsorption properties for SO.sub.2. A test kit accommodating such test pieces in a case, a protective case for the test kit to put the test kit into practical use, an umbrella and a forced air blowing unit are also disclosed.

Simplified environmental atmosphere measuring method

Simplified environmental atmosphere measuring apparatus

There is provided a test piece by which NO.sub.x, present in an environment may be visually observed apart from the influence of other gases, and with which qualitative and quantitative analysis may be performed. The test piece has a layered structure prepared by vacuum deposition a metal thin-film (Ag, Pt, Au, etc.) on a metal substrate (Cu, Zn, etc.). The rough amounts of NO.sub.x, SO.sub.x and NH.sub.3 in the environment are determined on the basis of the corrosion products (nitrates, etc.) produced when NO.sub.x, SO.sub.x and NH.sub.3 are collected after the test piece has been exposed to the environment for a prescribed period of time.

Environment monitoring test piece and test method

A patterning process is provided wherein a material to be etched is coated with a ladder type organosiloxane resin, the coated resin is irradiated with energy rays according to a desired pattern, the irradiated resin is subjected to a development treatment, and then, the material is etched by using the resin left after the development as a mask. The ladder type organosiloxane resin used is represented by the formula: ##STR1## wherein each R.sub.1 is independently selected from alkyl (Cl-6) groups, and phenyl and halophenyl groups, R.sub.2, R.sub.3, R.sub.4 and R.sub.5 are independently selected from hydrogen, alkoxy (Cl-3) groups, a hydroxyl group and alkyl (Cl-3) groups, and n is a number giving a Mw of about 1,000 to about 1,000,000. The patterning process can be advantageously employed for the production of electronic devices.

Patterning process using ladder-type organosiloxane resin and process

A dry-developing negative resist composition consisting of (a) a polymer of a monomer of the following formula I or II or a copolymer of a monomer of the following formula I with a monomer of the following formula II, ##STR1## in which R represents alkyl of 1 to 6 carbon atoms, benzyl, phenyl, or cyclohexyl and (b) 1% to 70% by weight, based on the weight of the composition, of a silicone compound. A negative resist pattern can be formed on a substrate by a process comprising coating the substrate with the resist composition, exposing the resist layer to an ionizing radiation, subjecting the resist layer to a relief treatment, and developing a resist pattern on the substrate by treatment with gas plasma.

Dry-developing negative resist composition

A cross-linkable positive-working ionizing radiation-resist or ultraviolet ray-resist polymer composition including: in polymerized form,

Positive resist polymer composition and method of forming resist pattern

PCT No. PCT/JP78/00022 Sec. 371 Date July 7, 1979 Sec. 102(e) Date July 2, 1979 PCT Filed Nov. 6, 1978 PCT Pub. No. WO79/00284 PCT Pub. Date May 31, 1979 A cross-linkable positive-working ionizing radiation-resist or ultraviolet ray- resist polymer composition including: in polymerized form,

Positive resist terpolymer composition and method of forming resist

PCT No. PCT/JP78/00021 Sec. 371 Date July 2, 1979 Sec. 102(e) Date July 7, 1979 PCT Filed Nov. 6, 1978 PCT Pub. No. WO79/00283 PCT Pub. Date May 31, 1979 A cross-linkable positive-working ionizing radiation-resist or ultraviolet ray-resist polymer composition comprising, in polymerized form,

A negative type resist is provided for deep ultraviolet light lithography. This resist comprises a polymer of a diallyl ester of a dicarboxylic acid having a degree of dispersion of 3 or less, which is given by the ratio of a weight-average molecular weight Mw to a number-average molecular weight Mn. This deep UV resist can produce a fine detail resist pattern having a high resolution, and it has a high sensitivity to irradiating the coated film of the polymer on a substrate with deep UV light followed by development.

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Yokohama, Japan

Toshisuke Kitakohji