Nippon Zeon Company, Ltd.

Zeon Corporation

Other

Taisho Pharmaceutical Co., Ltd.

Japan As Represented by Director General of Agency of Industrial Science

Japan As Represented by Director General of Agency of Industrial Science and Technology

Tokyo Eectron Limited

Japan As Represented by Director General of the Agency of Industrial

Tokyo Electron Limited

Toshiro Yamada

Kuniaki Goto

Tatsuya Sugimoto

Mitsuru Sugawara

Akira Sekiya

Hiroshi Fujisawa

Kimiaki Tanaka

Hideyuki Tanaka

Jiro Tsuji

Tetsuya Takagaki

Yasuhiro Mitsuda

Toshinobu Hirayama

Tadahiro Ohmi

Yasushi Nakano

Yoshiaki Watanabe

Takashi Adachi

Kei Sakamoto

Hideaki Kataoka

Akinobu Teramoto

Shigeo Morimoto

Yasuo Kobayashi

Kohei Kawamura

Hisao Nemoto

Kazunori Watanabe

Takashi Uruma

Noriyasu Ohtsuki

Shigeru Kurosawa

Yasuo Imai

Yoshihisa Kondou

Kohei c/o Tokyo Electron At Ltd Kawamura

Yasuo c/o Tokyo Electron At Ltd Kobayashi

The present invention relates to a semiconductor device comprising an insulation film consisting of a fluoridation carbon film that has been subjected to thermal history of 420&#xb0; C. or lower. The feature of the present invention is that an amount of hydrogen atoms included in the fluoridation carbon film is 3 atomic % or less before the fluoridation carbon film is subjected to the thermal history.

Semiconductor device, method for manufacturing semiconductor device and gas for plasma CVD

A gas for plasma reaction comprising a chainlike perfluoroalkyne having 5 or 6 carbon atoms, preferably perfluoro-2-pentyne. This plasma reaction gas is suitable for dry etching for formation of a fine pattern, for plasma CVD for formation of a thin film, and for plasma ashing. The plasma reaction gas is synthesized by contacting a dihydrofluoroalkane compound or a monohydrofluoroalkene compound with a basic compound.

Gas for plasma reaction, process for producing the same, and use thereof

2-Oxabicyclo[3.3.0]octane compounds represented by the following formula (1) (compound (1)); an optical resolver comprising at least one of the compounds (1); a process for producing the compounds (1) which comprises reacting a compound (2) or compound (3) with an alcohol (5) in the presence of an acid catalyst; a method of separating a diastereomer mixture of a compound (1); and a method of optically resolving an alcohol with the optical resolver. [In the formulae, Rto Reach represents hydrogen atom, etc.; Rrepresents an alkyl group, etc.; Rrepresents a hydrocarbon group, etc.; Rrepresents a hydrocarbon group, etc.; and A represents acetyl group, etc.]

2-oxabicyclo[3.3.0]octane compounds, process for producing the same, optical resolver, method of separating diastereomer mixture, and method of optically resolving alcohol

A high-purity gas for plasma reaction having an octafluorocyclopentene purity of at least 99.9% by volume based on the total volume of the gas for plasma reaction, wherein the total content of nitrogen gas and oxygen gas, contained as trace gaseous ingredients of the remainder, is not larger than 200 ppm by volume. This high-purity gas for plasma reaction can be produced by (1) a process of distilling crude octafluorocyclopentene in an inert gas of group 0, or (2) a process of distilling crude octafluorocyclopentene into a purity of at least 99.9% by volume, and then, removing an impurity remainder.

Gas for plasma reaction and process for producing thereof

Gas for plasma reaction, process for producing the same, and use

Gas for plasma reaction and method for production thereof

Compounds each having a &mdash;CH &mdash;CHF&mdash; group and a number of carbon atoms of 4 or above are prepared by hydrogenating a compound having a &mdash;CCl&boxH;CF&mdash; group and a number of carbon atoms of 4 or above in the presence of a noble metal catalyst in a liquid or gas phase. The compound having a &mdash;CCl&boxH;CF&mdash; group and a number of carbon atoms of 4 or above is preferably a C -C alicyclic one, and can be prepared by reacting a compound having a &mdash;CCl&boxH;CCl&mdash; group and a number of carbon atoms of 4 or above with a fluorinating agent.

Process for the preparation of compounds having -CH2-CHF-groups

A substrate to be etched is subjected to dry etching by using a dry etching gas containing a perfluorocycloolefin while a plasma with a high density region of at least 10 /cm is generated. As the perfluorocycloolefin, those having 3 to 8 carbon atoms, especially 4 to 6 carbon atoms are preferably used.

Dry etching method

A gaseous composition for dry etching, comprising a perfluorocycloolefin and 1 to 40% by mole, based on the perfluorocycloolefin, of at least one oxygen ingredient selected from oxygen gas and oxygen-containing gaseous compounds. As the perfluorocycloolefin, those having 3 to 8 carbon atoms, especially 4 to 6 carbon atoms, are preferably used.

Gas composition for dry etching and process of dry etching

In a process for preparing a fluorinated olefin having a carbon&mdash;carbon double bond, the carbon atoms of which have a fluorine atom, by reacting a halogenated olefin having at least one carbon&mdash;carbon double bond, a carbon atom or the carbon atoms of which bond have a chlorine atom or atoms bound thereto, and, in which the carbon atom or atoms with a single bond in the molecule have no halogen atom other than a fluorine atom, with an alkali metal fluoride, said reaction of the halogenated olefin with the alkali metal fluoride is conducted in the presence of an organic halogen-containing compound having a carbon&mdash;carbon single bond, a carbon or the carbons of which have at least one halogen atom other than fluorine atom.

Process for the preparation of fluorinated olefin

Lubricative polymer containing liquid and method of forming film of

Process for producing fluorinated alkene and fluorinated alkane

Process for producing fluorinated saturated hydrocarbon

Process for preparation of gem-difluoroalkanes

The invention discloses a process for preparing a 2,3-di-substituted cyclopentanone mixture containing an enriched cis-2,3-di-substituted cyclopentanone which comprises heating a trans-2,3-di-substituted cyclopentanone in the presence of 100 ppm or less (weight basis) of a metal carbonate based on the cyclopentanone. The invention also discloses a fragrant composition comprising 20 to 50 wt % of 2,3-di-substituted cis-methyl (dihydro)jasmonates and 80 to 50 wt % of 2,3-di-substituted (dihydro) trans-methyl (dihydro)jasmonates. The fragrant composition has jasmine flower-like fragrance.

Fragrant composition

Growing community of inventors

Tokyo, Japan

Toshiro Yamada