Tokyo Ohka Kogyo Co., Ltd.

Riken Corporation

Toshiba Kikai Kabushiki Kaisha

Ulvac, Inc.

Marubun Corporation

Toshiro Morita

Takashi Kamizono

Hideki Hirayama

Mitsunori Kokubo

Takaharu Tashiro

Ryuichiro Kamimura

Yamato Osada

Yukio Kashima

Eriko Matsuura

Motoki Takahashi

Katsuya Tanitsu

Takaaki Hirai

Isao Sato

Atsushi Murota

Provided is a deep ultraviolet LED with a design wavelength &#x3bb;, including a reflecting electrode layer, an ultra-thin metal layer, and a p-type contact layer that are arranged in this order from a side opposite to a substrate; and a hemispherical lens bonded to a rear surface of the substrate on a side of the p-type contact layer, the hemispherical lens being transparent to light with the wavelength &#x3bb;. The refractive index of the hemispherical lens is greater than or equal to the average value of the refractive index of the substrate and the refractive index of air and is less than or equal to the refractive index of the substrate. The hemispherical lens has a radius that is greater than or equal to the radius of an inscribed circle of the substrate and is about equal to the radius of a circumscribed circle of the substrate.

Deep ultraviolet LED and method for manufacturing the same

The light extraction efficiency of a deep ultraviolet LED is increased. The deep ultraviolet LED has a design wavelength &#x3bb;, and includes, sequentially arranged from a side opposite to a substrate, a reflecting electrode layer, a metal layer, a p-GaN contact layer, a p-AlGaN layer that is transparent to light with the wavelength &#x3bb;, one of a multi-quantum barrier layer or an electron blocking layer, a barrier layer, and a quantum well layer. A thickness of the p-AlGaN layer is less than or equal to 100 nm. A reflecting photonic crystal periodic structure having a plurality of voids is provided in a region in a thickness direction including at least an interface between the p-GaN contact layer and the p-AlGaN layer such that the reflecting photonic crystal periodic structure does not extend beyond the p-AlGaN layer in a direction of the substrate. Maximum light extraction efficiency is obtained when a distance from end faces of the voids in the direction of the substrate to the quantum well layer is greater than or equal to a total thickness of the barrier layer and the multi-quantum barrier layer (or the electron blocking layer) and less than or equal to 80 nm, and a depth h of each void is less than or equal to a total thickness of the p-AlGaN layer and the p-GaN contact layer. The reflecting photonic crystal periodic structure has a photonic band gap that opens for TE polarized components. A period a of the photonic crystal periodic structure satisfies a Bragg condition with respect to light with the design wavelength &#x3bb;. An order m in a formula of the Bragg condition satisfies 1&#x2264;m&#x2264;5. Provided that a radius of each void is R, R/a with which the photonic band gap becomes maximum is satisfied.

A diffusing agent composition including a condensation product and an impurity diffusion component. The condensation product is a reaction product resulting from hydrolysis of an alkoxysilane. The impurity diffusion component is a monoester or diester of phosphoric acid, or a mixture thereof.

Method for forming an impurity diffusion layer by applying a diffusing agent composition

A diffusing agent composition of an aspect of the invention contains: a condensation product (A) made from a starting material that is an alkoxysilane represented by the following general formula (1): [Chemical Formula 1]RSi(OR)&#x2003;&#x2003;(1)where Rand Rare an organic group, a plurality of Rs and Rs included in condensation product are identical or different, and m is 0, 1 or 2, the condensation product including an alkoxysilane where m=0 also including at least one alkoxysilane where m is 1 or 2; an impurity diffusion component (C); and an organic solvent (D).

Paintable diffusing agent composition

A method of diffusing an impurity-diffusing component including forming a first diffusing agent layer containing a first conductivity type impurity-diffusing component on the surface of a semiconductor substrate; calcining the first diffusing agent layer; forming a second diffusing agent layer containing a second conductivity type impurity-diffusing component on the surface of the semiconductor substrate excluding the region where the first diffusing agent layer is formed; and heating the semiconductor substrate at a temperature higher than the calcination temperature to diffuse the first and second conductivity type impurity-diffusing components to the semiconductor substrate.

Method of diffusing impurity-diffusing component and method of manufacturing solar cell

A diffusion-agent composition including a borate ester (A); a polyhydric alcohol (B) represented by general formula (1); and an alkoxysilane compound (C). In general formula (), k represents an integer from 0 to 3, m represents an integer of 1 or more, and Rand Reach independently represent a hydrogen atom, a hydroxyl group, a Calkyl group, or a Chydroxyalkyl group. When there are a plurality of Rs and Rs, the plurality of Rs and Rs may be the same as or different from one another. When k is 2 or more, the plurality of Rs and Rs always include at least one or more hydroxyl groups or Chydroxyalkyl groups having 1 to 5 carbon atoms. Rand Reach independently represent a hydrogen atom or a Calkyl group. 

Diffusion-agent composition for forming an impurity-diffusing agent layer on a semiconductor substrate

A film-forming composition according to one embodiment includes a siloxane polymer (A) containing a condensation product (A1) and a condensation product (A2). In the (A), a contained amount of the (A1) is 75 percent or less by mass in terms of SiOwith respect to the total of the (A1) and the (A2). The (A) has a weight-average molecular weight (MW) of 80 percent or greater of a molecular weight value M determined by expression (1) if R&#x3e;R, expression (2) if R&#x3c;R, or expression (3) if R&#x2550;R:M=(R/R)*(M+M)+[(R&#x2212;R)/R)]M&#x2003;&#x2003;expression (1):M=(R/R)*(M+M)+[(R&#x2212;R)/R)]M&#x2003;&#x2003;expression (2):M=M+M&#x2003;&#x2003;expression (3):(Mand Rare MW and the SiO-converted-mass ratio in the (A), respectively, for the (A1). Mand Rare MW and the SiO-converted-mass ratio in the (A), respectively, for the (A2)).

Film-forming composition, diffusing agent composition, method for manufacturing film-forming composition, and method for manufacturing diffusing agent composition

Provided are: a diffusing agent composition for ink-jet; a method for production of electrode and solar battery using the diffusing agent composition; and a solar battery produced by the method for production. The diffusing agent composition for ink-jet includes (a) a silicon compound, (b) an impurity-diffusing component and (c) a solvent, in which: the solvent (c) contains (c1) a solvent having a boiling point of no higher than 100&#xb0; C. and (c2) a solvent having a boiling point of 180 to 230&#xb0; C.; and the solvent (c1) is contained at a ratio of 70 to 90% by mass and the solvent (c2) is contained at a ratio of 1 to 20% by mass both relative to the total mass of the composition.

Diffusing agent composition for ink-jet, and method for production of electrode or solar battery using the composition

A film-forming composition for use in a coating diffusion method, capable of diffusing a dopant at a higher concentration, and further capable of concomitantly forming a silica-based coating film is provided. A film-forming composition for constituting a diffusion film provided for diffusing a dopant element into a silicon wafer, the film-forming composition including: (A) a polymeric silicon compound; (B) an oxide of the dopant element, or a salt including the dopant element; and (C) porogene.

Film-forming composition

An embodiment of the present invention relates to a diffusing agent composition used in printing an impurity-diffusing component onto a semiconductor substrate, wherein the diffusing agent composition contains: a hydrolysis product of alkoxysilane (A); a component (B) containing at least one selected from the group consisting of a hydrolysis product of alkoxy titanium, a hydrolysis product of alkoxy zirconium, titania fine particle, and zirconia fine particle; an impurity-diffusing component (C); and an organic solvent (D).

Diffusing agent composition, method of forming impurity diffusion layer, and solar battery

A mask material composition that is used for diffusion barrier of an impurity diffusing component into a semiconductor substrate includes a siloxane resin (A1) containing a constituent unit represented by the following formula (a1): wherein Ris a single bond or C-Calkylene group; and Ris a C-Caryl group.

Mask material composition, method of forming impurity diffusion layer, and solar battery

An SiO-based film-forming composition giving a protective film which, after impurity diffusion, can be easily stripped off and which has a higher protective effect. The film-forming composition is one for forming a protective film which in the diffusion of an impurity into a silicon wafer, serves to partly prevent the impurity diffusion. This film-forming composition comprises a high-molecular silicon compound and a compound having a protective element which undergoes covalent bonding to the element to be diffused in the impurity diffusion and thereby comes to have eight valence electrons. The protective element is preferably gallium or aluminum when phosphorus is used as the element to be diffused, and is preferably tantalum, niobium, arsenic, or antimony when boron is used as the diffusion element.

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Kawasaki, Japan

Toshiro Morita