Sharp Kabushiki Kaisha Corporation

Sharp Kabushiki

Toshiro Matsuyama

Yoshimi Kojima

Shaw Ehara

Takashi Hayakawa

Shiro Narikawa

Eiji Imada

Hideo Nojima

An amorphous silicon (a-Si) photoreceptor includes an amorphous silicon (a-Si) photoconductive layer, and a surface layer disposed above the amorphous silicon (a-Si) photoconductive layer. An intermediate layer is disposed between the amorphous-silicon (a-Si) photoconductive layer and the surface layer to ensure the energy level matching. The intermediate layer is made of amorphous silicon (a-Si) doped with nitrogen and boron so as to have the energy difference of less than 0.2 eV between the bottom of the conduction bands of the surface layer and the intermediate layer.

Amorphous silicon photoreceptor

A photoreceptor for electrophotography including an electrically conductive substrate, a bottom layer, a photoconductive layer composed mainly of amorphous silicon, and a surface layer, in that order. Both the bottom and surface layers have a greater optical bandgap than said photoconductive layer. A first middle layer is disposed between said bottom layer and said photoconductive layer, and a second middle layer is disposed between said photoconductive layer and said surface layer. Both the first and second middle layers are composed mainly of amorphous silicon and have a concentration of doped atoms which varies from the bottom to the top of the layer.

Photoreceptor for electrophotography with a-Si layers having a gradient

An apparatus for manufacturing photosensitive amorphous silicon objects comprises a pair of coaxial cylindrical electrodes inside a reaction tank of a plasma CVD device. A plurality of cylindrical substrates of an electrically conductive material disposed between these electrodes. A source gas is injected into the reaction tank through a plurality of inlets evenly spaced on the outer peripheral wall so that films of uniform quality can be produced efficiently.

Apparatus and method for manufacturing photosensitive amorphous silicon

A photoreceptor for electrophotography utilizing a-Si:N:H:F, wherein a stable high-sensitive layer is provided and the time-lapse variation in characteristics is reduced in the use of an a-Si.sub.1-x N.sub.x layer as a sensitive layer.

Photoreceptor for electrophotography comprising boron doped a-Si.sub.1-x

A method of manufacturing an electrophotographic photoreceptor having an amorphous silicon layer formed as a photoconductive layer, on an electrically conductive support member. The manufacturing method includes the steps of preparing the amorphous silicon layer as the photoconductive layer by employing Si.sub.2 H.sub.6 (disilane) as a main raw material gas through a glow discharge process, and simultaneously, adding nitrogen and boron to the main raw material gas, with the unsaturated bond being stabilized by hydrogen or hydrogen and fluorine.

Method of manufacturing an amorphous Si electrophotographic photoreceptor

A plasma CVD (chemical vapor deposition) apparatus of the capacitance coupling type for effecting the chemical vapor deposition on a drum which includes an air tight chamber made of an electrically conductive material, a support provided in the chamber for supporting the drum inside the chamber in an electrically insulated relationship with the chamber, and an RF power source for supplying RF power to the drum. The chamber is grounded and, therefore, the plasma is generated between the drum and inside wall of the chamber. The apparatus is provided with means for providing a smooth surface on the drum. The drum can be used as a photoreceptor for use in an electrophotographic copying machine.

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Tenri, Japan

Toshiro Matsuyama