Kabushiki Kaisha Toshiba

Sumitomo Metal Mining Company, Ltd.

Fujitsu Component Limited

Nec Corporation

Nippon Electric Co., Ltd.

N.e. Chemcat Corporation

Toshio Yamaguchi

Yukihiro Mori

Masahiro Tsuchiya

Sumio Watanabe

Tetsuhiro Ishikawa

Yoshinari Takabatake

Masaru Kihara

Kikoo Uekusa

Shuichi Tamamushi

Nobuyuki Itoh

Hiroomi Nakajima

Kazuto Matsuki

Hiroyuki Nihira

Eiryo Tsukioka

Takao Suzuki

Shigehiro Hara

Eiji Murakami

Souji Koikari

Ryuzo Orui

Yukuaki Mitarai

Hideharu Yokozuka

Takayuki Abe

Ryoichi Yoshikawa

Hitoshi Higurashi

Shin-ichi Taka

Yasuhiro Katsumata

Satoshi Yamasaki

Kenji Hirakawa

Yasuhiro Itagaki

Toshihiko Sakurai

Tetsuro Kamo

Yoshimasa Inoue

Hideki Takada

Genichi Goto

Kazuyuki Okuzono

Eiji Yamaguchi

Yuji Uragami

Naoto Kinbara

Eiji Funatsu

Katsuzo Shiraishi

Satoshi Abe

Yuki Kanai

A printer includes a printing part that performs printing on recording paper, a cutter that cuts the recording paper, a first roller provided on the side to which the recording paper is discharged from the cutter, a second roller that is in contact with the first roller and is rotated by the rotation of the first roller, a third roller that is in contact with the first roller and is rotated by the rotation of the first roller, and a connecting arm that connects the center of the first roller and the center of the second roller, wherein the recording paper is discharged between the first roller and the second roller or between the first roller and the third roller.

Printer and method of controlling printer

A printer includes a printing part that performs printing on a label adhering to a liner, a cutter that cuts the liner to which the label adheres, a first roller provided on the side to which the liner to which the label adheres is discharged from the cutter, a second roller that is in contact with the first roller and is rotated by the rotation of the first roller, a third roller that is in contact with the first roller and is rotated by the rotation of the first roller, and a connecting arm that connects the center of the first roller and the center of the second roller, wherein the liner is separated from the label by the first roller and the second roller, and the label separated from the liner is discharged by the third roller.

Printer with cutter having arm connecting center of first roller and center of second roller

A printer includes a printing part that performs printing on recording paper, a cutter that cuts the recording paper, a first roller provided on the side to which the recording paper is discharged from the cutter, a second roller, a third roller, a fourth roller, and a fifth roller that are in contact with the first roller and are rotated by the rotation of the first roller, and a connecting arm that connects the center of the first roller and the center of the second roller, wherein the recording paper is discharged between the first roller and the fourth roller or between the first roller and the fifth roller.

Printer with first discharge roller connected to second roller by connecting arm

A thermal head unit includes a head substrate having a heating element serving as a thermal head formed thereon, a flexible substrate, a driver IC disposed on the flexible substrate to drive the thermal head, and a heat sink attached to the head substrate and to the flexible substrate, wherein the driver IC and the flexible substrate are electrically connected to each other, and the driver IC and the head substrate are electrically connected to each other.

Thermal head unit and thermal printer with driver IC on flexible substrate

A hydrogenation catalyst for hydrocarbon oils containing aromatic hydrocarbons is provided. The catalyst has a silica-magnesia oxide carrier with a magnesia content within a range from 25 to 50 weight percent calculated in terms of the metal oxide, to which a noble metal selected from among the group VIII metals of the periodic table is added as the active component. In addition, the pore characteristics of the catalyst are such that the volume of pores with a pore size of at least 4 nm as measured by a mercury porosimetry method is within the range from 0.3 to 0.6 ml/g, the volume of pores with a pore size of at least 200 nm as measured by a mercury porosimetry method is no more than 0.05 ml/g, the volume of pores with a pore size from 0.7 to 2 nm as measured by nitrogen adsorption-t-plot method is within the range from 0.2 to 0.3 ml/g, and the volume of pores with a pore size from 2 to 4 nm as measured by nitrogen adsorption-DH method is within the range from 0.15 to 0.2 ml/g.

Hydrogenation catalyst for aromatic hydrocarbons contained in hydrocarbon oils

Production of spherical catalyst carrier

A pattern lithography system for lithographing a pattern with reference to a pattern data by deflecting an electron beam includes a controller, an extracting unit, a dividing unit, and an expansion unit. The controller analyzes the pattern data and determines stripes of the pattern to be successively lithographed. The extracting unit extracts parts of the pattern data corresponding to stripes of the pattern in response to commands from the controller and sends the data to the dividing unit. The dividing unit divides the part of the pattern data into a plurality of sub-patterns. The sub-patterns are sized smaller than a minimum deflection range of the electron beam. The expanding unit expands the sub-patterns in accordance with a command from the controller to produce stripe data for driving a lithographing unit to lithograph the stripe. Stripes may have at least one sub-pattern in common such that multiple lithography is performed.

Electron beam exposure apparatus

A process for producing spherical catalyst carrier of silica, silica-alumina composition, zirconia-alumina composition, titania-alumina composition, boria-alumina composition, or boria-silica-alumina composition which has almost the same pore characteristics as alumina hydrate gel, silica-alumina hydrate gel, zirconia-alumina hydrate gel, or titania-alumina hydrate gel (or alumina hydrate paste, boria-alumina hydrate paste, or boria-silica-alumina hydrate paste) as the major raw material, having uniform sphericity and smooth surface and homogeneity, and has a macropore volume that can be controlled includes adding a polysaccharide solution to any of alumina, silica-alumina, zirconia-alumina, or titania-alumina in the form of hydrate gel, or alumina, boria-alumina, or boria-silica-alumina in the form of hydrate paste, mixing them to form a slurry with a controlled concentration, dropping the slurry into a solution containing multivalent metal ions, thereby forming spherical hydrogel, and performing the additional steps of aging, washing, drying, and calcining.

The present invention provides a charged beam drawing method comprising a first step of setting a stripe field independent of drawing pattern definition data and of determining the drawing pattern definition data which belongs to the stripe field set, a second step of setting a sub-field independent of the drawing pattern definition data and of determining the drawing pattern definition data which belongs to the sub-field, among the drawing pattern definition data determined, a third step of drawing the drawing pattern definition data which belongs to the sub-field onto an object to be subjected to drawing, a fourth step of shifting a position of the stripe field by a first predetermined value, and of shifting a position of the sub-field by a second predetermined value, and a fifth step of repeating the first to fourth steps for at least two times.

Charged beam drawing method

An electron beam lithography apparatus is provided for drawing a exposure pattern on a sample by dividing the exposure pattern into a plurality of pattern elements and individually directing the electron beam to the sample at the pattern element. The size of the pattern element is adjusted in accordance with a gradient of a spatial variation of a back scattering dose. By doing so, it is possible to suppress distortion at the exposure area of one shot and to suppress an uneven edge of an exposure area row. If the size of the pattern element is made uniformly smaller, the drawing throughput is markedly lowered. The sizes of the pattern element varies in accordance with the gradient of a spatial variation of the back scattering dose and it is, therefore, possible to suppress a fall in the drawing throughput.

Electron beam lithography apparatus and method

Catalysts for hydrodesulfurization and hydrodenitrogenation of hydrocarbon oils are provided which have high catalytic activity, excellent productivity and low pollution. The catalysts are made from an alumina carrier substance, at least one active metal element selected from the Group VI metals in the periodic table, at least one active metal element chosen from the Group VIII metals in the periodic table, phosphoric acid, and an additive agent. The additive agent is at least one substance selected from dihydric or trihydric alcohols having 2-10 carbon atoms per one molecule, ethers of the alcohols, monosaccharides, disaccharides, and polysaccharides. A method for preparing the catalysts is also provided and includes impregnating the alumina carrier substance with a solution mixed with a certain amount of the active metal elements, phosphoric acid and the additive agent, and drying the impregnated carrier substance at a temperature of less than 200.degree. C.

Catalysts for hydrotreating hydrocarbon oils and method of preparing the

In an electron beam lithography method which irradiates a sample with an electron beam to draw a desired pattern on the sample, figure data representing the shape of an elemental figure, placement data representing placement information of the figure data, and dose data representing dose for each of areas which are obtained by dividing a drawing area which are smaller than the broadening of backscattering of an electron beam are independently stored in a memory as drawing data. On the basis of the drawing data, the figure data is divided into unit figures each of which has a predetermined shape and is smaller than a predetermined size. A represented point of each unit figure is calculated, a dose of an electron beam is obtained from the data set for an area in which the represented point is present, and the quantity of radiation is determined as dose for the unit figure.

Charged particle litography method and apparatus

In a bipolar transistor, having a micronized structure for a high-speed LSI, which is fabricated by a self-alignment technology, a barrier insulating film is buried in a portion around an emitter layer so as to be deeper than a junction level between an active base layer and a collector layer. When a polysilicon film pattern which defines an active base region and serves as a portion of a base electrode is formed on a wafer surface, a surface portion of a photoresist serving as an etching mask is converted to a carbonized layer by ion implantation. When a micronized emitter layer is formed by a polysilicon-emitter technology, ion implantation is performed before deposition of the polysilicon film or an impurity is doped in the polysilicon film simultaneously with deposition, and rapid thermal annealing is performed so as to activate the doped impurity.

Method of fabricating bipolar transistor using self-aligned polysilicon

In the method of manufacturing a semiconductor device, a buffer oxide film, an oxidation-resistant film and a first poly-Si film containing a p-type impurity are successively formed to form a laminate structure on the n-type collector region, followed by forming a protective oxide film by CVD. Then, an opening portion reaching the oxidation-resistant film is formed, followed by forming a second protective insulation film to cover the surface of the first poly-Si film exposed at the side wall of the opening portion. The oxidation-resistant film is excessively etched using the protective insulation films as an etching mask so as to expose the buffer oxide film and to form a bore below the first poly-Si film. The exposed buffer oxide film is removed, followed by filling the bore with a second poly-Si film. Then, a heat treatment is performed under an oxidative atmosphere to form a thermal oxide film covering the surface of the second poly-Si film. At the same time, the p-type impurity contained in the first poly-Si film is diffused through the second poly-Si film into the collector region to form a p-type outer base region. Further, a p-type inner base region, n-type emitter region and an emitter electrode are formed.

Method of manufacturing semiconductor device

Growing community of inventors

Tokyo, Japan

Toshio Yamaguchi