Mitsubishi Denki Kabushiki Kaisha

Toshio Umemura

Akira Yamada

Fusaoki Uchikawa

Chisako Maeda

Takehiko Sato

Akira Maeda

Shusou Wadaka

Takahide Ishikawa

Koichiro Misu

Shinichi Kinouchi

Toshihisa Honda

Kunihiko Egawa

Ayumi Nozaki

Takuo Ozawa

Shin Utsunomiya

Mitsunobu Wakata

A process for manufacturing a plurality of dielectric thin film devices by forming a lower layer on a substrate, coating a dielectric thin film on the lower layer, forming the dielectric thin film into a plurality of predetermined shapes, and, if desired, forming an upper structure on each of the plurality of dielectric thin films, wherein the dielectric thin film is divisionally formed on the lower layer by using a mask after the lower layer is formed to have a stress in a direction opposite to that of the dielectric thin film, or alternatively the dielectric thin film is divided into predetermined shapes after being formed.

Dielectric thin film element and process for manufacturing the same

A piezoelectric thin film device which is composed mainly of a substrate, a piezoelectric thin film formed on the substrate, and thin film electrodes formed on both the upper and lower surfaces of the thin film. The thin film is resonated by applying an AC voltage across the electrodes. A substrate removed section is formed by partially or entirely removing the substrate below the thin film and opened to both the front and rear surfaces of the substrate through openings so as to relieve the pressure variation in the substrate removed section below a resonant structure.

Piezoelectric thin film device

A joining method using lead-free solder which can produce a good joint through a heating process. A first lead-free alloy layer is formed on surfaces of all parts to be mounted on a board at a temperature equal to or lower than the melting point of the first alloy layer. A second lead-free alloy layer having a melting point lower than the first alloy layer is formed on surface of the board. The first and second alloy layers are placed in contact with each other and heated to a predetermined temperature.

Lead-free solder joining method and electronic module manufactured by using the method

An electrode for a dielectric thin film device includes an adhesive layer adhering to a substrate, a diffusion suppressing layer containing compounds of metal elements constituting the adhesive layer or the substrate, and a main conduction layer. The crystallinity is enhanced by preventing diffusion of unnecessary elements into the dielectric thin film.

Electrode for dielectric-thin film device, and ultrasonic wave

The invention relates to a temperature-measuring-resistor which comprises vanadium oxide as a matrix material. The matrix material further contains at least one member selected from a metal, a metal oxide and a metal nitride, and the member has an electric conductivity higher than that of the vanadium oxide. The temperature-measuring-resistor has a low room temperature resistivity, and a volume resisivity that varies greatly with temperature.

Temperature-measuring-resistor, manufacturing method therefor, ray

A method for manufacturing the oxide superconductor according to the present invention comprises the steps of: mixing a starting material including Bi, Sr, Ca and Cu such that a mole ratio of Bi, Sr, Ca and Cu is 2:2+a:1+b:2+c, wherein a.gtoreq.0, b.gtoreq.0, c.gtoreq.0, and 0&lt;a+b+c&lt;3; melting the mixed material at a temperature of 900.degree. C.-1500.degree. C.; quenching rapidly the molten material; and annealing the quenched material at a partial molten temperature of 800.degree. C.-1000.degree. C. This method gives product wherein a precipitate of at least one compound in the group SrO, CuO and (Ca.sub.1-x Sr.sub.x).sub.2 CuO.sub.3 (wherein 0.gtoreq.x&lt;1) is finely dispersed in the superconducting crystal of Bi.sub.2 Sr.sub.2 Ca.sub.1 Cu.sub.2 O.sub.y (wherein y is about 8). The precipitates act as flux pinning centers. Further, an oxide superconductor according to the present invention comprises superconducting crystal consisting of Bi, Sr, Ca and Cu oxides and separate oxide phases including Pt as a principal component being finely dispersed in the superconducting crystal. These finely dispersed oxides including Pt act as flux pinning centers.

Growing community of inventors

Tokyo, Japan

Toshio Umemura