Sumitomo Electric Industries, Limited

Toshio Ueda

Takao Nakamura

Toshiyuki Kuramoto

Masaki Ueno

Takashi Kyono

Masatoshi Majima

Tetsuya Kuwabara

Tomoyuki Awazu

Chihiro Hiraiwa

Eiryo Takasuka

Naho Mizuhara

Hideyuki Doi

Yoko Watanabe

Provided are a gas decomposition component, a method for producing a gas decomposition component, and a power generation apparatus. A gas decomposition componentincludes a cylindrical-body MEAincluding a first electrodedisposed on an inner-surface side, a second electrodedisposed on an outer-surface side, and a solid electrolytesandwiched between the first electrode and the second electrode; and a porous metal bodyinserted on the inner-surface side of the cylindrical-body MEA and electrically connected to the first electrode, wherein the gas decomposition component further includes a porous conductive-paste-coated layerformed on an inner circumferential surface of the first electrode, and a metal mesh sheetdisposed on an inner circumferential side of the conductive-paste-coated layer, and an electrical connection between the first electrode and the porous metal body is established through the conductive-paste-coated layer and the metal mesh sheet.

Power generation apparatus

Gas decomposition component, method for producing gas decomposition component, and power generation apparatus

Provided are a gas decomposition component in which an electrochemical reaction is used to reduce the running cost and high treatment performance can be achieved; and a method for producing the gas decomposition component. The gas decomposition component includes a cylindrical MEAincluding an anodeon an inner-surface side, a cathodeon an outer-surface side, and a solid electrolytesandwiched between the anode and the cathode; a porous metal bodythat is inserted on the inner-surface side of the cylindrical MEA and is in contact with the first electrode; and a central conductive rodinserted so as to serve as an electrically conductive shaft of the porous metal body

Gas decomposition component, ammonia decomposition component, power generation apparatus, electrochemical reaction apparatus, and method for producing gas decomposition component

Provided are a gas decomposition component, a power generation apparatus including the gas decomposition component, and a method for decomposing a gas. A gas decomposition component includes a cylindrical MEA including a first electrode layer, a cylindrical solid electrolyte layer, and a second electrode layer in order from an inside toward an outside, in a layered structure; a first gas channel through which a first gas that is decomposed flows, the first gas channel being disposed inside the cylindrical MEA; and a second gas channel through which a second gas flows, the second gas channel being disposed outside the cylindrical MEA, wherein the gas decomposition component further includes a heater for heating the entirety of the component; and a preheating pipe through which the first gas to be introduced into the first gas channel passes beforehand to be preheated.

Gas decomposition component, power generation apparatus, and method for decomposing gas

Metal organic chemical vapor deposition equipment is metal organic chemical vapor deposition equipment for forming a film on a substrate by using a reactant gas, and includes a susceptor heating the substrate and having a holding surface for holding the substrate, and a flow channel for introducing the reactant gas to the substrate. The susceptor is rotatable with the holding surface kept facing an inner portion of the flow channel, and a height of the flow channel along a flow direction of the reactant gas is kept constant from a position to a position, and is monotonically decreased from the position to the downstream side. It is thereby possible to improve film formation efficiency while allowing the formed film to have a uniform thickness.

Metal organic chemical vapor deposition equipment

Provided is a gas decomposition component that employs an electrochemical reaction and can have high treatment performance, in particular, an ammonia decomposition component. The gas decomposition component includes a MEAincluding a solid electrolyteand an anodeand a cathodethat are disposed so as to sandwich the solid electrolyte; Celmetselectrically connected to the anode; a heaterthat heats the MEA; and an inletthrough which a gaseous fluid containing a gas is introduced into the MEA, an outletthrough which the gaseous fluid having passed through the MEA is discharged, and a passage P extending between the inlet and the outlet, wherein the Celmetsare discontinuously disposed along the passage P and, with respect to a middle positionof the passage, the length of the Celmets disposed is larger on the side of the outlet than on the side of the inlet.

Gas decomposition component

A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.

Vapor-phase process apparatus, vapor-phase process method, and substrate

A fabrication apparatus and fabrication method of a semiconductor device are provided, allowing the temperature distribution of a substrate to be rendered uniform. The fabrication apparatus for a semiconductor device includes a susceptor holding the substrate, a heater arranged at a back side of the susceptor, a support member located between the substrate and susceptor, including a support portion, and a spacer located between the susceptor and support member. The spacer has an opening formed corresponding to the site where said support portion is located, at an opposite face side of the support member.

Growing community of inventors

Itami, Japan

Toshio Ueda