Konica Corporation

Konica-Minolta Holdings, Inc.

Toshio Tsuji

Kazuhiro Fukuda

Takashi Murakami

Yoshikazu Kondo

Chikao Mamiya

Shunichi Iwamaru

Yumi Muramatsu

Hiroaki Arita

Takakazu Kiyomura

Shigeru Hosoe

Hiromoto Ii

Kiyoshi Oishi

Hiroto Itoh

A method for manufacturing a transparent gas barrier film for an organic electroluminescence element having a substrate with a gas barrier layer thereon. The gas barrier layer is formed on the substrate by plasma CVD using an organic silicon compound as a raw material gas and an oxygen gas as a decomposition gas. Formation of the gas barrier layer is carried out so that a carbon content of the gas barrier layer in the thickness direction repeatedly changes more than two times from high value, via intermediate value, low value and intermediate value, to high value.

Method for manufacturing a transparent gas barrier film

A gas barrier laminate comprising a substrate having thereon at least a gas barrier layer and a polymer layer, wherein at least one polymer layer is provided adjacent to at least one gas barrier layer; and an average carbon content of the polymer layer at a contact interface between the gas barrier layer is lower than an average carbon content in the polymer layer.

Gas barrier laminate and production method of the same

A transparent gas barrier film comprising a substrate having thereon a gas barrier layer comprising at least a low density layer and a high density layer, wherein one or more intermediate density layers are sandwiched between the low density layer and the high density layer.

Transparent gas barrier film

A method for forming a film comprising a first process and a second process, the first process comprising the steps of: supplying a discharge gas to a first discharge space where high frequency electric field A is generated at or near atmospheric pressure, whereby the discharge gas is excite; transferring energy of the excited discharge gas to a film forming gas, whereby the film forming gas is excited; and exposing a substrate to the film forming gas to form a film on the substrate, and the second process comprising the steps of: supplying a gas containing an oxidizing gas to a second discharge space where high frequency electric field B is generated at or near atmospheric pressure, whereby the gas containing the oxidizing gas is excite; and the film formed in the first process is exposed to the excited gas containing the oxidizing gas.

Method for forming thin film and base and having thin film formed by such method

A layer forming method is disclosed which comprises the steps of supplying power of not less than 1 W/cmat a high frequency voltage exceeding 100 kHz across a gap between a first electrode and a second electrode opposed to each other at atmospheric pressure or at approximately atmospheric pressure to induce a discharge, generating a reactive gas in a plasma state by the charge, and exposing a substrate to the reactive gas in a plasma state to form a layer on the substrate.

Layer forming method, product comprising the layer, optical film, dielectric-coated electrode and plasma discharge apparatus

A transparent conductive layer forming method is disclosed which comprises the steps of introducing a reactive gas to a discharge space, exciting the reactive gas in a plasma state by discharge at atmospheric pressure or at approximately atmospheric pressure, and exposing a substrate to the reactive gas in a plasma state to form a transparent conductive layer on the substrate, wherein the reactive gas comprises a reducing gas.

Transparent conductive layer forming method, transparent conductive layer formed by the method, and material comprising the layer

A layer forming method is disclosed which comprises the steps of supplying power of not less than 1 W/cm at a high frequency voltage exceeding 100 kHz across a gap between a first electrode and a second electrode opposed to each other at atmospheric pressure or at approximately atmospheric pressure to induce a discharge, generating a reactive gas in a plasma state by the charge, and exposing a substrate to the reactive gas in a plasma state to form a layer on the substrate.

Layer-forming method using plasma state reactive gas

An optical element, comprises a silicon based resin satisfying following three conditional formulas: (1) (number of silicon atoms residing as R1SiO,in the silicon based resin)/(total number of silicon atoms in the silicon based resin)&gE;0, (2) (number of silicon atoms residing as SiO,in the silicon based resin)/(total number of silicon atoms in the silicon based resin)&gE;0, (3) &lcub;(number of silicon atoms residing as R1SiO,in the silicon based resin)&plus;(number of silicon atoms residing as SiO,in the silicon based resin)&rcub;&times;100/(total number of silicon atoms in the silicon based resin)&gE;10%, wherein R1 represents a hydrogen atom, a hydroxyl group, an amino group, a halogen atom or an organic group.

Growing community of inventors

Tokyo, Japan

Toshio Tsuji